New features dispersions function of the current material
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New features
dispersions function of the current material
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Create materials – n and k fix
Dispersion function Picture: wikipedia
amplifying lasing materials Oscillator with neg. force Glass, Polymer Cauchy function k<0 non absorbing Semiconductor Forouhi-Bloomer function k=0 0<k≤ 1 Superposition of oscillators Dye Oscillator absorbing k>0 Oscillator in UV Metal k≥ 1 + Drude (Plasmon) Function
Cauchy: in general Picture: wikipedia
Cauchy: for n and k Picture: wikipedia
Cauchy:
Cauchy:
Cauchy:
Cauchy:
Cauchy:
Cauchy:
Cauchy: Thickness of a Cauchy layer (substrate = Si(100)
amplifying lasing materials Oscillator with neg. force Glass, Polymer Cauchy function k<0 non absorbing Semiconductor Forouhi-Bloomer function k=0 0<k≤ 1 Superposition of oscillators Dye Oscillator absorbing k>0 Oscillator in UV Metal k≥ 1 + Drude (Plasmon) Function
amplifying lasing materials Oscillator with neg. force Glass, Polymer Cauchy function k<0 non absorbing Semiconductor Forouhi-Bloomer function k=0 0<k≤ 1 Superposition of oscillators Dye Oscillator absorbing k>0 Oscillator in UV Metal k≥ 1 + Drude (Plasmon) Function
Lorentz – parameter study
Lorentz – parameter study
Lorentz – parameter study
Lorentz – parameter study
amplifying lasing materials Oscillator with neg. force Glass, Polymer Cauchy function k<0 non absorbing Semiconductor Forouhi-Bloomer function k=0 0<k≤ 1 Superposition of oscillators Dye Oscillator absorbing k>0 Oscillator in UV Metal k≥ 1 + Drude (Plasmon) Function
Drude Picture: wikipedia
Drude – parameter study
Drude – parameter study
Drude – parameter study
Dispersion functions: Effective medium approach Layers out of two components
Dispersion functions: Effective medium approach Incomplete layers – material + void
Dispersion functions: Effective medium approach Surface roughtness
Lorentz-Lorentz: eh = 1 The host is chosen as air. This is the earliest EMA theory, and is based on the Clausius. Mossotti equation. It assumes that the individual constituents are mixed on the atomic scale, and is therefore of limited usefulness in describing real materials, which tend to be mixed on a much larger scale. Tompkins HG, Irene EA (2005) Handbook of Ellipsometry. William Andrew Publishing. NY
Maxwell-Garnett: eh = e 1 The host material is the material that has the largest constituent fraction. This is the most realistic EMA theory when the fraction of inclusions is significantly less than the fraction of host material. This EMA is very useful for cermats or for certain types of nanocrystals embedded in hosts well below the perculation threshold. Tompkins HG, Irene EA (2005) Handbook of Ellipsometry. William Andrew Publishing. NY
Bruggeman: eh = < e > the host material is just the EMA dielectric function. The Bruggeman EMA makes no assumption concerning the material that has the highest constituent fraction, and is therefore self-consistent. It is most useful when no constituent forms a clear majority of the material. Tompkins HG, Irene EA (2005) Handbook of Ellipsometry. William Andrew Publishing. NY
(Al 2 O 3 + Si. O 2) | Si(100) = (host + guest) | substrate Maxwell-Garnett, Volume fraction (guest) = 0, layerthickness 65 nm
(Al 2 O 3 + Si. O 2) | Si(100) = (host + guest) | substrate Maxwell-Garnett, Volume fraction (guest) = 0, layerthickness 65 nm
(Al 2 O 3 + Si. O 2) | Si(100) = (host + guest) | substrate Maxwell-Garnett, Volume fraction (guest) = 0 -1, layerthickness 65 nm
(Al 2 O 3 + Si. O 2) | Si(100) = (host + guest) | substrate Maxwell-Garnett, Volume fraction (guest) = 0 -1, layer thickness 100 nm
(Al 2 O 3 + Si. O 2) | Si(100) = (host + guest) | substrate Maxwell-Garnett, Volume fraction (guest) = 0 -1, layer thickness 10 nm
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