Digital Integrated Circuits A Design Perspective Jan M

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Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Introduction

Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Introduction July 30, 2002 © EE 141 Digital Integrated Circuits 2 nd 1 Introduction

What is this book all about? q Introduction to digital integrated circuits. § CMOS

What is this book all about? q Introduction to digital integrated circuits. § CMOS devices and manufacturing technology. CMOS inverters and gates. Propagation delay, noise margins, and power dissipation. Sequential circuits. Arithmetic, interconnect, and memories. Programmable logic arrays. Design methodologies. q What will you learn? § Understanding, designing, and optimizing digital circuits with respect to different quality metrics: cost, speed, power dissipation, and reliability © EE 141 Digital Integrated Circuits 2 nd 2 Introduction

Digital Integrated Circuits Introduction: Issues in digital design q The CMOS inverter q Combinational

Digital Integrated Circuits Introduction: Issues in digital design q The CMOS inverter q Combinational logic structures q Sequential logic gates q Design methodologies q Interconnect: R, L and C q Timing q Arithmetic building blocks q Memories and array structures q © EE 141 Digital Integrated Circuits 2 nd 3 Introduction

Introduction q Why is designing digital ICs different today than it was before? q

Introduction q Why is designing digital ICs different today than it was before? q Will it change in future? © EE 141 Digital Integrated Circuits 2 nd 4 Introduction

The First Computer © EE 141 Digital Integrated Circuits 2 nd 5 Introduction

The First Computer © EE 141 Digital Integrated Circuits 2 nd 5 Introduction

ENIAC - The first electronic computer (1946) © EE 141 Digital Integrated Circuits 2

ENIAC - The first electronic computer (1946) © EE 141 Digital Integrated Circuits 2 nd 6 Introduction

The Transistor Revolution First transistor Bell Labs, 1948 © EE 141 Digital Integrated Circuits

The Transistor Revolution First transistor Bell Labs, 1948 © EE 141 Digital Integrated Circuits 2 nd 7 Introduction

The First Integrated Circuits Bipolar logic 1960’s ECL 3 -input Gate Motorola 1966 ©

The First Integrated Circuits Bipolar logic 1960’s ECL 3 -input Gate Motorola 1966 © EE 141 Digital Integrated Circuits 2 nd 8 Introduction

Intel 4004 Micro-Processor 1971 1000 transistors 1 MHz operation © EE 141 Digital Integrated

Intel 4004 Micro-Processor 1971 1000 transistors 1 MHz operation © EE 141 Digital Integrated Circuits 2 nd 9 Introduction

Intel Pentium (IV) microprocessor © EE 141 Digital Integrated Circuits 2 nd 10 Introduction

Intel Pentium (IV) microprocessor © EE 141 Digital Integrated Circuits 2 nd 10 Introduction

Moore’s Law l. In 1965, Gordon Moore noted that the number of transistors on

Moore’s Law l. In 1965, Gordon Moore noted that the number of transistors on a chip doubled every 18 to 24 months. l. He made a prediction that semiconductor technology will double its effectiveness every 18 months © EE 141 Digital Integrated Circuits 2 nd 11 Introduction

Moore’s Law Electronics, April 19, 1965. © EE 141 Digital Integrated Circuits 2 nd

Moore’s Law Electronics, April 19, 1965. © EE 141 Digital Integrated Circuits 2 nd 12 Introduction

Evolution in Complexity © EE 141 Digital Integrated Circuits 2 nd 13 Introduction

Evolution in Complexity © EE 141 Digital Integrated Circuits 2 nd 13 Introduction

Transistor Counts 1 Billion Transistors K 1, 000 100, 000 1, 000 i 386

Transistor Counts 1 Billion Transistors K 1, 000 100, 000 1, 000 i 386 80286 100 10 i 486 Pentium® III Pentium® Pro Pentium® 8086 Source: Intel 1 1975 1980 1985 1990 1995 2000 2005 2010 Projected © EE 141 Digital Integrated Circuits 2 nd Courtesy, Intel 14 Introduction

Moore’s law in Microprocessors Transistors (MT) 1000 2 X growth in 1. 96 years!

Moore’s law in Microprocessors Transistors (MT) 1000 2 X growth in 1. 96 years! 100 10 486 1 P 6 Pentium® proc 386 286 0. 1 8086 8080 8008 4004 8085 Transistors on Lead Microprocessors double every 2 years 0. 01 0. 001 1970 © EE 141 Digital Integrated 1980 Circuits 2 nd 1990 Year Courtesy, Intel 2000 2010 15 Introduction

Die Size Growth Die size (mm) 100 10 8080 8008 4004 1 1970 8086

Die Size Growth Die size (mm) 100 10 8080 8008 4004 1 1970 8086 8085 1980 286 386 P 6 Pentium ® proc 486 ~7% growth per year ~2 X growth in 10 years 1990 Year 2000 2010 Die size grows by 14% to satisfy Moore’s Law © EE 141 Digital Integrated Circuits 2 nd Courtesy, Intel 16 Introduction

Frequency (Mhz) 10000 Doubles every 2 years 1000 10 8085 1 0. 1 1970

Frequency (Mhz) 10000 Doubles every 2 years 1000 10 8085 1 0. 1 1970 8086 286 386 486 P 6 Pentium ® proc 8080 8008 4004 1980 1990 Year 2000 2010 Lead Microprocessors frequency doubles every 2 years © EE 141 Digital Integrated Circuits 2 nd Courtesy, Intel 17 Introduction

Power Dissipation Power (Watts) 100 P 6 Pentium ® proc 10 8086 286 1

Power Dissipation Power (Watts) 100 P 6 Pentium ® proc 10 8086 286 1 8008 4004 486 386 8085 8080 0. 1 1974 1978 1985 1992 2000 Year Lead Microprocessors power continues to increase © EE 141 Digital Integrated Circuits 2 nd Courtesy, Intel 18 Introduction

Power will be a major problem 100000 18 KW 5 KW 1. 5 KW

Power will be a major problem 100000 18 KW 5 KW 1. 5 KW 500 W Power (Watts) 10000 1000 Pentium® proc 100 286 486 8086 10 386 8085 8080 8008 1 4004 0. 1 1974 1978 1985 1992 2000 2004 2008 Year Power delivery and dissipation will be prohibitive © EE 141 Digital Integrated Circuits 2 nd Courtesy, Intel 19 Introduction

Power density Power Density (W/cm 2) 10000 Rocket Nozzle 1000 Nuclear Reactor 100 8086

Power density Power Density (W/cm 2) 10000 Rocket Nozzle 1000 Nuclear Reactor 100 8086 10 4004 Hot Plate P 6 8008 8085 Pentium® proc 386 286 486 8080 1 1970 1980 1990 2000 2010 Year Power density too high to keep junctions at low temp © EE 141 Digital Integrated Circuits 2 nd Courtesy, Intel 20 Introduction

Not Only Microprocessors Cell Phone Small Signal RF Digital Cellular Market (Phones Shipped) Power

Not Only Microprocessors Cell Phone Small Signal RF Digital Cellular Market (Phones Shipped) Power RF Power Management 1996 1997 1998 1999 2000 Units 48 M 86 M 162 M 260 M 435 M Analog Baseband Digital Baseband (DSP + MCU) (data from Texas Instruments) © EE 141 Digital Integrated Circuits 2 nd 21 Introduction

Challenges in Digital Design µ DSM µ 1/DSM “Macroscopic Issues” “Microscopic Problems” • Time-to-Market

Challenges in Digital Design µ DSM µ 1/DSM “Macroscopic Issues” “Microscopic Problems” • Time-to-Market • Millions of Gates • High-Level Abstractions • Reuse & IP: Portability • Predictability • etc. • Ultra-high speed design • Interconnect • Noise, Crosstalk • Reliability, Manufacturability • Power Dissipation • Clock distribution. Everything Looks a Little Different ? © EE 141 Digital Integrated Circuits 2 nd …and There’s a Lot of Them! 22 Introduction

10, 000 100, 000, 000 Logic Tr. /Chip Tr. /Staff Month. 1, 000, 000

10, 000 100, 000, 000 Logic Tr. /Chip Tr. /Staff Month. 1, 000, 000 10, 000 100, 000 Productivity (K) Trans. /Staff - Mo. Complexity Logic Transistor per Chip (M) Productivity Trends 1, 000, 000 58%/Yr. compounded Complexity growth rate 10 10, 000 100, 000 1, 0001 10 10, 000 x 0. 1 100 xx 0. 01 10 xx x x 1 1, 000 21%/Yr. compound Productivity growth rate x 0. 1 100 0. 01 10 2009 2007 2005 2003 2001 1999 1997 1995 1993 1991 1989 1987 1985 1983 1981 0. 001 1 Source: Sematech Complexity outpaces design productivity © EE 141 Digital Integrated Circuits 2 nd Courtesy, ITRS Roadmap 23 Introduction

Why Scaling? Technology shrinks by 0. 7/generation q With every generation can integrate 2

Why Scaling? Technology shrinks by 0. 7/generation q With every generation can integrate 2 x more functions per chip; chip cost does not increase significantly q Cost of a function decreases by 2 x q But … q § How to design chips with more and more functions? § Design engineering population does not double every two years… q Hence, a need for more efficient design methods § Exploit different levels of abstraction © EE 141 Digital Integrated Circuits 2 nd 24 Introduction

Design Abstraction Levels SYSTEM MODULE + GATE CIRCUIT DEVICE G S n+ © EE

Design Abstraction Levels SYSTEM MODULE + GATE CIRCUIT DEVICE G S n+ © EE 141 Digital Integrated Circuits 2 nd D n+ 25 Introduction

Design Metrics q How to evaluate performance of a digital circuit (gate, block, …)?

Design Metrics q How to evaluate performance of a digital circuit (gate, block, …)? § § § Cost Reliability Scalability Speed (delay, operating frequency) Power dissipation Energy to perform a function © EE 141 Digital Integrated Circuits 2 nd 26 Introduction

Cost of Integrated Circuits q NRE (non-recurrent engineering) costs § design time and effort,

Cost of Integrated Circuits q NRE (non-recurrent engineering) costs § design time and effort, mask generation § one-time cost factor q Recurrent costs § silicon processing, packaging, test § proportional to volume § proportional to chip area © EE 141 Digital Integrated Circuits 2 nd 27 Introduction

NRE Cost is Increasing © EE 141 Digital Integrated Circuits 2 nd 28 Introduction

NRE Cost is Increasing © EE 141 Digital Integrated Circuits 2 nd 28 Introduction

Die Cost Single die Wafer Going up to 12” (30 cm) From http: //www.

Die Cost Single die Wafer Going up to 12” (30 cm) From http: //www. amd. com © EE 141 Digital Integrated Circuits 2 nd 29 Introduction

Cost per Transistor cost: ¢-per-transistor 1 0. 1 Fabrication capital cost per transistor (Moore’s

Cost per Transistor cost: ¢-per-transistor 1 0. 1 Fabrication capital cost per transistor (Moore’s la 0. 01 0. 0001 0. 000001 0. 0000001 1982 1985 © EE 141 Digital Integrated 1988 Circuits 2 nd 1991 1994 1997 2000 2003 2006 2009 30 2012 Introduction

Yield © EE 141 Digital Integrated Circuits 2 nd 31 Introduction

Yield © EE 141 Digital Integrated Circuits 2 nd 31 Introduction

Defects a is approximately 3 © EE 141 Digital Integrated Circuits 2 nd 32

Defects a is approximately 3 © EE 141 Digital Integrated Circuits 2 nd 32 Introduction

Some Examples (1994) Chip Metal Line layers width Wafer cost Def. / Area Dies/

Some Examples (1994) Chip Metal Line layers width Wafer cost Def. / Area Dies/ Yield cm 2 mm 2 wafer Die cost 386 DX 2 0. 90 $900 1. 0 43 360 71% $4 486 DX 2 3 0. 80 $1200 1. 0 81 181 54% $12 Power PC 601 4 0. 80 $1700 1. 3 121 115 28% $53 HP PA 7100 3 0. 80 $1300 1. 0 196 66 27% $73 DEC Alpha 3 0. 70 $1500 1. 2 234 53 19% $149 Super Sparc 3 0. 70 $1700 1. 6 256 48 13% $272 Pentium 3 0. 80 $1500 1. 5 296 40 9% $417 © EE 141 Digital Integrated Circuits 2 nd 33 Introduction

Reliability― Noise in Digital Integrated Circuits v(t) i(t) Inductive coupling © EE 141 Digital

Reliability― Noise in Digital Integrated Circuits v(t) i(t) Inductive coupling © EE 141 Digital Integrated Circuits 2 nd Capacitive coupling V DD Power and ground noise 34 Introduction

DC Operation Voltage Transfer Characteristic V(y) V VOH = f(VOL) VOL = f(VOH) VM

DC Operation Voltage Transfer Characteristic V(y) V VOH = f(VOL) VOL = f(VOH) VM = f(VM) f OH V(y)=V(x) VM Switching Threshold V OL V OH V(x) Nominal Voltage Levels © EE 141 Digital Integrated Circuits 2 nd 35 Introduction

Mapping between analog and digital signals V “ 1” V OH V IH V

Mapping between analog and digital signals V “ 1” V OH V IH V out OH Slope = -1 Undefined Region V “ 0” V Slope = -1 IL V OL OL V © EE 141 Digital Integrated Circuits 2 nd IL V IH V in 36 Introduction

Definition of Noise Margins "1" V V OH NM L OL V Noise margin

Definition of Noise Margins "1" V V OH NM L OL V Noise margin high IH V Undefined Region IL Noise margin low "0" Gate Output © EE 141 Digital Integrated Circuits 2 nd Gate Input 37 Introduction

Noise Budget q Allocates gross noise margin to expected sources of noise q Sources:

Noise Budget q Allocates gross noise margin to expected sources of noise q Sources: supply noise, cross talk, interference, offset q Differentiate between fixed and proportional noise sources © EE 141 Digital Integrated Circuits 2 nd 38 Introduction

Key Reliability Properties q Absolute noise margin values are deceptive § a floating node

Key Reliability Properties q Absolute noise margin values are deceptive § a floating node is more easily disturbed than a node driven by a low impedance (in terms of voltage) q Noise immunity is the more important metric – the capability to suppress noise sources q Key metrics: Noise transfer functions, Output impedance of the driver and input impedance of the receiver; © EE 141 Digital Integrated Circuits 2 nd 39 Introduction

Regenerative Property Regenerative © EE 141 Digital Integrated Circuits 2 nd Non-Regenerative 40 Introduction

Regenerative Property Regenerative © EE 141 Digital Integrated Circuits 2 nd Non-Regenerative 40 Introduction

Regenerative Property v 0 v 1 v 2 v 3 v 4 v 5

Regenerative Property v 0 v 1 v 2 v 3 v 4 v 5 v 6 A chain of inverters Simulated response © EE 141 Digital Integrated Circuits 2 nd 41 Introduction

Fan-in and Fan-out N © EE 141 Digital Integrated Circuits 2 nd M Fan-in

Fan-in and Fan-out N © EE 141 Digital Integrated Circuits 2 nd M Fan-in M 42 Introduction

The Ideal Gate V out Ri = Ro = 0 Fanout = NMH =

The Ideal Gate V out Ri = Ro = 0 Fanout = NMH = NML = VDD/2 g= V in © EE 141 Digital Integrated Circuits 2 nd 43 Introduction

An Old-time Inverter 5. 0 4. 0 NM L 3. 0 (V) 2. 0

An Old-time Inverter 5. 0 4. 0 NM L 3. 0 (V) 2. 0 out V VM NM H 1. 0 0. 0 © EE 141 Digital Integrated 1. 0 Circuits 2 nd 2. 0 3. 0 V in (V) 4. 0 5. 0 44 Introduction

Delay Definitions © EE 141 Digital Integrated Circuits 2 nd 45 Introduction

Delay Definitions © EE 141 Digital Integrated Circuits 2 nd 45 Introduction

Ring Oscillator T = 2 ´ tp ´ N © EE 141 Digital Integrated

Ring Oscillator T = 2 ´ tp ´ N © EE 141 Digital Integrated Circuits 2 nd 46 Introduction

A First-Order RC Network R vin vout C tp = ln (2) t =

A First-Order RC Network R vin vout C tp = ln (2) t = 0. 69 RC Important model – matches delay of inverter © EE 141 Digital Integrated Circuits 2 nd 47 Introduction

Power Dissipation Instantaneous power: p(t) = v(t)i(t) = Vsupplyi(t) Peak power: Ppeak = Vsupplyipeak

Power Dissipation Instantaneous power: p(t) = v(t)i(t) = Vsupplyi(t) Peak power: Ppeak = Vsupplyipeak Average power: © EE 141 Digital Integrated Circuits 2 nd 48 Introduction

Energy and Energy-Delay Power-Delay Product (PDP) = Energy per operation = Pav tp Energy-Delay

Energy and Energy-Delay Power-Delay Product (PDP) = Energy per operation = Pav tp Energy-Delay Product (EDP) = quality metric of gate = E tp © EE 141 Digital Integrated Circuits 2 nd 49 Introduction

A First-Order RC Network R vin © EE 141 Digital Integrated Circuits 2 nd

A First-Order RC Network R vin © EE 141 Digital Integrated Circuits 2 nd vout CL 50 Introduction

Summary Digital integrated circuits have come a long way and still have quite some

Summary Digital integrated circuits have come a long way and still have quite some potential left for the coming decades q Some interesting challenges ahead q § Getting a clear perspective on the challenges and potential solutions is the purpose of this book q Understanding the design metrics that govern digital design is crucial § Cost, reliability, speed, power and energy dissipation © EE 141 Digital Integrated Circuits 2 nd 51 Introduction