IOIOESD Positive to VSS Negative to VSS Positive

I/O管脚—I/O管脚—地管脚ESD测试 Positive to VSS Negative to VSS Positive I/O管脚—电源管脚ESD测试 ESD� 介 ESD器件仿真方法 Positive 2020/12/1

几种测试模型 Model Parameters Parasitic Components Standard Level Model Time rise (nsec) Time decay (nsec)

Physics { Fermi Effective. Intrinsic. Density (Band. Gap. Narrowing (Old. Slotboom)) Mobility(Dopingdependence High. Field.

Solve Report Iteration |Rhs| factor |step| error #inner #iterative time ---------------------------------------0 2. 62 e+01

解决方法 � 定minstep 和 interations: minstep的数� 至少比initialstep少 3个数量� Solve { Hole } Math {

解决方法 Electrode { { Name="anode" Voltage=0. 0 resistor=3 e 9} { Name="cathode"Voltage=0. 0 }

①的解决方法 Solve{ Coupled{Poisson Electron Hole Temperature } Quasistationary{……} Coupled{Poisson Electron Hole Temperature} } Solve{

②的解决方法 Electrode{ Name=”Drain”, Voltage=0. 0 Name=”Source”, Voltage=0. 0 Name=”Gate”, Voltage=5. 0 Name=”sub”, Voltage=0. 0

$混合仿真在ESD设计中的应用 Device SCR{ File { Grid = "n 2_msh. tdr" Current = "n 4_des.$

$混合仿真在ESD设计中的应用（续 1） System{ Vsource_pset V 1 (n 1 n 0) {dc=10} Vsource_pset V 2$

混合仿真在ESD设计中的应用（续 2） plot { e. Density h. Density e. Current h. Current Electric. Field

Drain Current [1 e-4 A] 不同� 偏� 下p. HEMT器件的Vd/Id曲� Vgs=0. 8 V Vgs=0. 4

Drain Current [A] 不同漏极偏� 下p. HEMT器件Ig/Id曲 � Vds=1. 5 V Vds=0. 05 V Gate

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I/O管脚—I/O管脚—地管脚ESD测试 Positive to VSS Negative to VSS Positive I/O管脚—电源管脚ESD测试 ESD� 介 ESD器件仿真方法 Positive 2020/12/1 to VDD 仿真收� 性�� Negative to VDD Negative 电源管脚—地管脚关� 参数 9/90 二次� 穿� 流仿真 Positive 特殊ESD器件 Negative 9/101

几种测试模型 Model Parameters Parasitic Components Standard Level Model Time rise (nsec) Time decay (nsec) Vpeak (V) Cesd (p. F) Resd (Ω) Lesd (μH) Okey (V) Safe (V) Super (V) HBM ≈10 150± 20 2000~15000 1500 7. 5 2000 4000 10000 MM ≈ 6~7. 5 60 -90 (ring period) 100 -400 200 数十 1 -2 200 400 1000 CDM < 0. 2 -0. 4 -2 250 -2000 6. 8 数十 1 -2 500 1000 2000 等效放电电路 ESD� 介 2020/12/1 ESD器件仿真方法仿真收� 性�� 关� 参数 23/90 二次� 穿� 流仿真特殊ESD器件

Physics { Fermi Effective. Intrinsic. Density (Band. Gap. Narrowing (Old. Slotboom)) Mobility(Dopingdependence High. Field. Saturation Enormal Carrier. Scattering) Recombination(SRH(Doping. Dependence Temp. Dependence tunneling) Auger Avalanche(Eparallel)) Incomplete. Ionization Thermodynamic Analytic. TEP } ESD� 介 2020/12/1 ESD器件仿真方法仿真收� 性�� 关� 参数 34/90 二次� 穿� 流仿真特殊ESD器件

Solve Report Iteration |Rhs| factor |step| error #inner #iterative time ---------------------------------------0 2. 62 e+01 0. 03 1 8. 14 e+03 1. 00 e+00 3. 17 e-03 1. 63 e+02 0 1 0. 15 2 5. 69 e+00 1. 00 e+00 3. 14 e-06 2. 24 e-01 0 1 0. 29 Finished, because. . . Error smaller than 1 ( 0. 223705 ). Accumulated times: Rhs time: 0. 08 s Jacobian time: 0. 07 s Solve time: 0. 14 s Total time: 0. 29 s Contact Voltage Electron Hole Conduction outer inner current gate 0. 000 E+00 8. 794 E-29 -1. 754 E-45 8. 794 E-29 substrate 0. 000 E+00 5. 901 E-18 -1. 686 E-16 -1. 627 E-16 drain 1. 993 E-02 8. 363 E-11 -1. 953 E-19 8. 363 E-11 source介 ESD器件仿真方法 0. 000 E+00 3. 345 E-09 -8. 363 E-11 -4. 605 E-26 -8. 363 E-11 ESD� 仿真收� 性�� 关� 参数二次� 穿� 流仿真特殊ESD器件 2020/12/1 40/90

解决方法 � 定minstep 和 interations: minstep的数� 至少比initialstep少 3个数量� Solve { Hole } Math { Iterations =15 Not. Damped = 50 Extrapolate Rel. Err. Control } ESD� 介 2020/12/1 ESD器件仿真方法 Poisson Coupled { Poisson Electron New. Current. Prefix="snapback“ Quasistationary ( Initialstep=1 e-6 Max. Step=0. 1 Minstep=1 e-12 increment=2. 0 Goal { name="anode" voltage=4 e 7} ) { Coupled { Poisson Electron Hole Temperature} } } 仿真收� 性�� 关� 参数 42/90 二次� 穿� 流仿真特殊ESD器件

解决方法 Electrode { { Name="anode" Voltage=0. 0 resistor=3 e 9} { Name="cathode"Voltage=0. 0 } { Name="sub" Voltage=0. 0 }} ESD� 介 2020/12/1 ESD器件仿真方法仿真收� 性�� 关� 参数 46/90 二次� 穿� 流仿真特殊ESD器件

①的解决方法 Solve{ Coupled{Poisson Electron Hole Temperature } Quasistationary{……} Coupled{Poisson Electron Hole Temperature} } Solve{ Poisson Coupled{Poisson Electron} Coupled{Poisson Electron Hole } Quasistationary{……} Coupled{Poisson Electron Hole Temperature} } ESD� 介 2020/12/1 ESD器件仿真方法仿真收� 性�� 关� 参数 48/90 二次� 穿� 流仿真特殊ESD器件

②的解决方法 Electrode{ Name=”Drain”, Voltage=0. 0 Name=”Source”, Voltage=0. 0 Name=”Gate”, Voltage=5. 0 Name=”sub”, Voltage=0. 0 } …… Solve{ …… } ESD� 介 2020/12/1 ESD器件仿真方法仿真收� 性�� Electrode{ Name=”Drain”, Voltage=0. 0 Name=”Source”, Voltage=0. 0 Name=”Gate”, Voltage=0. 0 Name=”sub”, Voltage=0. 0 } …… Solve{ …… Goal{name=”Gate”, Voltage=5. 0} } 关� 参数 49/90 二次� 穿� 流仿真特殊ESD器件

$混合仿真在ESD设计中的应用 Device SCR{ File { Grid = "n 2_msh. tdr" Current = "n 4_des.$

混合仿真在ESD设计中的应用 Device SCR{ File { Grid = "n 2_msh. tdr" Current = "n 4_des. plt“ Plot = "n 4_des. dat”} Electrode { { Name="anode" Voltage=0 Area=50} { Name="cathode" Voltage=0. 0 Area=50}} Thermode { { name="anode" temperature=300 } { name="cathode" temperature=300} } ESD� 介 2020/12/1 ESD器件仿真方法仿真收� 性�� Physics { Fermi Effective. Intrinsic. Density (Band. Gap. Narrowing (Old. Slotboom) Fermi) Mobility(Dopingdependence High. Field. Saturation Enormal Carrier. Scattering) Recombination(SRH(Doping. Depend ence Temp. Dependence tunneling) Auger. Avalanche(Eparallel)) Thermodynamic Analytic. TEP } Physics(Material. Interface="Oxide/Silic on") {charge(surfconc=5. e 10)} } 关� 参数 63/90 二次� 穿� 流仿真特殊ESD器件

$混合仿真在ESD设计中的应用（续 1） System{ Vsource_pset V 1 (n 1 n 0) {dc=10} Vsource_pset V 2$

混合仿真在ESD设计中的应用（续 1） System{ Vsource_pset V 1 (n 1 n 0) {dc=10} Vsource_pset V 2 (n 6 n 0) {pwl=(0 0. 1 0. 99 e-9 0. 1 1 e-9 -1 )} Vsource_pset V 3 (n 7 n 0) {pwl=(0 -1 0. 99 e-9 -1 1 e-9 0. 1 1 e-5 0. 1 )} Switch_pset S 1 ("S+"=n 1 "S-"=n 2 "SC+"=n 6 "SC-"=n 0) Switch_pset S 2 ("S+"=n 4 "S-"=n 5 "SC+"=n 7 "SC-"=n 0) Capacitor_pset C (n 2 n 0) {capacitance=1 e-10} Resistor_pset R (n 3 n 2) {resistance=1500} Inductor_pset L (n 4 n 3) {inductance=7. 5 e-6} SCR scr ("anode"=n 5 "cathode"=n 0) set(n 0=0) set(n 2=0) plot n 1流仿真 n 2 n 3 特殊ESD器件 n 4 n 5 ESD� 介 "mixed-mode-simulation-10 V-500 Width"(time() 穿� ESD器件仿真方法仿真收� 性�� 关� 参数二次�n 0 i(R n 3) i(L n 4) ) } 64/90 2020/12/1

混合仿真在ESD设计中的应用（续 2） plot { e. Density h. Density e. Current h. Current Electric. Field e. Quasi. Fermi h. Quasi. Fermi Potential/vector Doping Space. Charge SRH Auger Avalanche e. Mobility h. Mobility Donor. Concentration Acceptor. Concentration Effective. Intrinsic. Density Doping} Math { Iterations =20 Not. Damped = 50 Digits=4 Extrapolate Rel. Err. Control No. Check. Transient. Error} ESD� 介 2020/12/1 ESD器件仿真方法 Solve { Coupled {Poisson} Coupled {Circuit} Coupled { Poisson circuit} New. Current. Prefix="scr_10 V-50 Width" unset(n 2) Transient (Initial. Time=0 Final. Time=1 e-9 Initial. Step=5 e-11 Max. Step=2 e-10 Min. Step=1 e-14) { Coupled{ Poisson Electron Hole Temperature circuit }} Transient (Initial. Time=1 e-9 Final. Time=3 e-9 Initial. Step=3 e-11 Max. Step=3 e-10 Min. Step=1 e-17) { Coupled{ Poisson Electron Hole Temperature circuit }} Transient (Initial. Time=3 e-9 Final. Time=1 e-8 Initial. Step=3 e-10 Max. Step=1 e-9 Min. Step=1 e-17) { Coupled{ Poisson Electron Hole Temperature circuit }} Transient (Initial. Time=1 e-8 Final. Time=1 e-7 Initial. Step=3 e-9 Max. Step=1 e-8 Min. Step=1 e-16) { Coupled{Poisson Electron Hole Temperature circuit }} Transient (Initial. Time=1 e-7 Final. Time=1 e-6 Initial. Step=3 e-8 Max. Step=1 e-7 Min. Step=1 e-15) { Coupled{Poisson Electron Hole Temperature circuit}}} 仿真收� 性�� 关� 参数 65/90 二次� 穿� 流仿真特殊ESD器件

Drain Current [1 e-4 A] 不同� 偏� 下p. HEMT器件的Vd/Id曲� Vgs=0. 8 V Vgs=0. 4 V Vgs=0 V Vgs=-0. 4 V Vgs=-0. 8 V Drain Voltage [V] ESD� 介 2020/12/1 ESD器件仿真方法仿真收� 性�� 关� 参数 86/90 二次� 穿� 流仿真特殊ESD器件

Drain Current [A] 不同漏极偏� 下p. HEMT器件Ig/Id曲 � Vds=1. 5 V Vds=0. 05 V Gate Voltage [V] ESD� 介 2020/12/1 ESD器件仿真方法仿真收� 性�� Gate Voltage [V] 关� 参数 87/90 二次� 穿� 流仿真特殊ESD器件