Advantage of Multi Pixel Photon Counter PMT APD

Advantage of Multi Pixel Photon Counter PMT APD Gain 106 ～ 107 H. V

HPK 100 aのあるBias Vの領域において半端なp. e数で saturateが起こる number of event Break down Voltage

Gain v. s Bias V Gain • Gain=3× 105 ～ 2× 107 • d.

HPK 100 a HPK 400 b (20℃) noise rate (Hz) Noise Rate v. s

by poisson law 1 -43 -22(100) X-talk possibility X-talk v. s bias V 5

Unknown Behavior • such a behavior was seen in HPK’s 4 Si. PMs number

ピクセル数ピッチ (μm) Vb(V) シグナル幅（ns) quench抵抗(kΩ) Vr(V) Id(n. A) 構造 5

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Advantage of Multi Pixel Photon Counter PMT APD Gain 106 ～ 107 H. V 1～ 2 k. V 100～ 500 V 磁場内での動作 Proble matic 100～ 200 OK MPPC 106～ 107 high gain 20～ 80 V low bias V 5 mm compact size ! OK low cost is expected Dynamic Range ～ 400 MPPCはFGDからの要求にマッチしていることがわかるよって、FGDでの使用へむけ、MPPCの性能評価を行う

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HPK 100 aのあるBias Vの領域において半端なp. e数で saturateが起こる number of event Break down Voltage 100 p. e saturation HPK 100 a V=48. 0 100 pixel中 30 pixel だけがガイガーモードになっている？ 30 p. e 100 pixel 30 70 HPK 100 a V=47. 2 LED full intensity Geiger mode Avalanche mode pixelごとにbreak down voltageがばらついている可能性がある adc count

Gain v. s Bias V Gain • Gain=3× 105 ～ 2× 107 • d. G/d. V depends on Capacitance of a pixel • T=20℃ all of 4 have 600 pixels Rus#20 Rus#14 Rus#23 Rus#22 HPK 100 a Gain bias voltage (V) HPK 100 f HPK 100 d number of pixel HPK 100 e HPK 400 b HPK 1600 a bias voltage (V)

HPK 100 a HPK 400 b (20℃) noise rate (Hz) Noise Rate v. s Bias V HPK 100 f HPK 100 d HPK 100 e HPK 1600 a noise rate (Hz) bias voltage (V) 0. 5 p. e threshold by pulse height RUS#14 RUS#20 RUS#23 RUS#22 bias voltage (V) 0. 5 p. e threshold by charge (in progress) 1. 5 p. e threshold by pulse height

by poisson law 1 -43 -22(100) X-talk possibility X-talk v. s bias V 5 -31 -22(1600) 21 -53 -2 A-3(100) 5 -63 -1 A-2(100) 1 -32 -21(400) 21 -53 -1 A-3(100) bias voltage (V)

Unknown Behavior • such a behavior was seen in HPK’s 4 Si. PMs number of event • Possibility that pixel’s gain are divided to two pattern ? p. e peak HPK 100 b • currently we are researching this in detail adc count

ピクセル数ピッチ (μm) Vb(V) シグナル幅（ns) quench抵抗(kΩ) Vr(V) Id(n. A) 構造 5 -31 -22 (1600 a) 1600 25 79 5 135 73. 5 4. 6 type 4 1 -21 A-21 (1600 b) 1600 25 55 5 135 49. 5 19 type 1 1 -22 -2 A 22 (400 a) 400 50 55 10 180 48. 7 4. 7 type 1 1 -32 -21 (400 b) 400 50 53 10 108 48. 4 54 type 2 1 -43 -22 (100 a) 100 52 100 270 48. 4 625 type 5 1 -63 -1 A 22 (100 b) 100 54 60 270 49. 6 15 type 1 1 -63 -1 A 23 (100 c) 100 53 60 270 48. 1 48 type 1 5 -63 -1 A-2 (100 d) 100 53 40 270 72. 7 24. 7 type 3 21 -53 -1 A 3 (100 e) 100 75 12 42 70. 6 21. 7 type 6 21 -53 -2 A 3 (100 f) 100 76 40 147 70. 6 19. 8 type 6 Si. PM ID