Issues in Flash Memory Contents Flash Memory FTL

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Issues in Flash Memory

Issues in Flash Memory

Contents § Flash Memory 개요 § FTL (Flash Translation Layer) § S/W 연구분야의 이슈

Contents § Flash Memory 개요 § FTL (Flash Translation Layer) § S/W 연구분야의 이슈

Flash Memory vs. Hard Disk Drive

Flash Memory vs. Hard Disk Drive

NOR Flash vs. NAND Flash NOR Flash Memory 장점 NAND Flash Memory § Byte

NOR Flash vs. NAND Flash NOR Flash Memory 장점 NAND Flash Memory § Byte 단위 addressing § Block 단위 addressing § 빠른 read § Erase/write 성능 좋음 § 작은 cell 크기 단점 § 느린 erase/write 연산 § 느린 random access 응용 § Boot image, BIOS § Solid state disk § 대용량 저장 용도

FTL (Flash Translation Layer)

FTL (Flash Translation Layer)

NAND Flash Memory의 구조 Page 0 Page 1 Block 0 Block 1 Block n-1

NAND Flash Memory의 구조 Page 0 Page 1 Block 0 Block 1 Block n-1 Page m-1 Device Block 0 Page 0 Block 1 Page 1 Block 2 … Block 8191 … Page 31 Page (sector) Main Array (512 B) § § § Spare Array(16 B) 1 Page = (512 + 16) Bytes 1 Block = 32 pages (sectors) 1 Device = 8192 Blocks (128 Mbytes)

Flash Memory의 특징 § Erase-before-write architecture § Erase 단위와 read/write 단위의 불일치 2 Block

Flash Memory의 특징 § Erase-before-write architecture § Erase 단위와 read/write 단위의 불일치 2 Block Page 0 Page 1 Page 2 Page 3 … Page 31 before overwrite page 1 … Page 31 Block Page 0 Page 1 Page 2 Page 3 … … Page 31 Page 1 copy & erase this block 1 Page 0 … Page 31 after overwrite page 1

FTL (Flash Translation Layer) File System Read Sectors Write Sectors Mismatch! Read Write Erase

FTL (Flash Translation Layer) File System Read Sectors Write Sectors Mismatch! Read Write Erase File System Read Sectors Write Sectors FTL + Device Driver + + Flash Memory HDD 출처: 지인정보기술

Memory 장치의 특성 Cost Current (m. A) Memory $/Gb idle active Mobile SDRAM Low

Memory 장치의 특성 Cost Current (m. A) Memory $/Gb idle active Mobile SDRAM Low power SRAM Fast SRAM NOR NAND 48 320 614 96 21 0. 5 0. 005 5 0. 03 0. 01 75 3 65 32 10 Random Access (16 bit) read write erase 90 ns 55 ns 10 ns 200 ns 10. 1 us 90 ns 55 ns 10 ns 210. 5 us 200. 5 us N. A 1. 2 sec 2 ms Asymmetrical operations: read/write [박찬익, 삼성전자]

Sector Mapping LSN: Logical Sector Number PSN : Physical Sector Number Sector 0 LSN

Sector Mapping LSN: Logical Sector Number PSN : Physical Sector Number Sector 0 LSN PSN “Write to LSN=9” 0 12 1 11 2 10 3 9 4 8 5 7 6 6 7 5 8 4 9 3 10 2 11 1 12 0 Mapping table Sector 1 Block 0 … Block 1 Block 2 Block 3 Sector 15 Flash Memory

Block Mapping LBN: Logical Block Number PBN : Physical Block Number Sector 0 Sector

Block Mapping LBN: Logical Block Number PBN : Physical Block Number Sector 0 Sector 1 “Write to LSN=9” Block 0 … Block 1 LBN PBN LBN : 9/4 =2 Offset : 1 0 3 1 2 2 1 3 0 Mapping table Block 2 PBN : 1 Offset : 1 Block 3 Sector 15 Flash Memory

Hybrid Mapping LBN: Logical Block Number PBN : Physical Block Number Sector 0 Sector

Hybrid Mapping LBN: Logical Block Number PBN : Physical Block Number Sector 0 Sector 1 Block 0 … “Write to LSN=9” Block 1 LBN PBN LBN : 9/4 =2 Offset : 1 0 3 1 2 2 1 3 0 Mapping table 1 Block 2 PBN : 1 Offset : 1 Block 3 Sector 15 Flash Memory

Spare Space 기법 § Mitsubishi - Data space : in-place - Spare space :

Spare Space 기법 § Mitsubishi - Data space : in-place - Spare space : out-of-place sector 0 sector 1 sector 2 sector 3 sector 4 sector 5 sector 6 1 data space sector 6 1 sector 7 1 Spare space write sector 1

Mirror Block 기법 § M-Systems data block sector 0 sector 1 sector 2 sector

Mirror Block 기법 § M-Systems data block sector 0 sector 1 sector 2 sector 3 sector 4 sector 5 sector 6 sector 7 sector 8 sector 9 sector 10 sector 11 write sector 1 mirror block sector 1 write sector 1 1 mirror block sector 1 1 write sector 1