Dr Urmi Ray Qualcomm Technologies Inc Trends in


































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Dr. Urmi Ray Qualcomm Technologies, Inc. Trends in Mobile Industry and Impact on Packaging and Integration 1
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Outline 1 Mobile Revolution 2 Technology Trends in Handheld Devices 3 Mobile Architecture Tsunami 4 Wrap Up, Journey Ahead 3
Mobile Revolution 4
Continued smartphone momentum ~7 B ~20% CAGR for smartphone unit shipments expected between 2012 -2017 unit shipments forecast Cumulative smartphone between 2013 -2017 Source: Gartner, Sept ‘ 13 5
Smartphone: our most personal device ~106 ~94% ~75% ~79% Avg. number of daily app launches by US Android users 18 -24 year olds reach for it immediately after waking up Use their device to look for local information Watch video on their device 6 Sources: com. Score custom research avg. over Q 3’ 13, IDC Mar ’ 13, Google May ’ 13
A new era: mobile drives growth and innovation in computing (and packaging) Device shipments Semiconductor revenues ~6 X >2 X 2012 2017 PCs $51 B 2012 $68 B $56 B 2016 $90 B PCs Mobile devices Source: Smartphones units: Gartner, Mar-13; Tablet units: Avg of Gartner, Mar-13 & SA, Apr-13; PC units (desktop + portable): Avg of Gartner, Mar-13 & IDC, Feb 13; Semiconductor revenue: Gartner, Dec. ’ 12; Mobile devices include mobile phones and tablets. PAGE 7
LEARNS What You Like FILTERS Out the Irrelevant SENSES KNOWS Local Content and Services You and What is Around You DISCOVERS Things Relevant to You INTERACTS With Networks The Remote Control For Your Life IN THE FUTURE YOUR MOBILE PHONE WILLACT AS YOUR DIGITAL “ 6 TH SENSE” 8
Internet of Everything EVERYTHING AROUND US IS BECOMING INTELLIGENT & CONNECTED Automotive Industrial Health & Fitness Home Increasing M 2 M Communication 9 PAGE 9
Technology Trends & Drivers for Handheld Devices 10
Mobile Chipset Trends Smartphones/Phablets are packing more and more features More memory BW and density Miniaturization of the chipset, especially in the Z dimension CMOS Scaling “slow down” beyond 10 nm A series of disruptive technology changes will be required 11
Smartphone Trends –Industrial design Battery and Display are major “space hogger” PCM OEMs strategy for PCB design vary widely − PCB trend − − Thickness Reduction Adoption of any layer PCBs L/S reduction to 50 um 40 um Adoption of LDI (Laser Direct Imaging) 12
Mobile package styles (Nexus 4 Phone Board) Memory Application Processor APQ 8064 MLP Po. P Package LTE Modem MDM 9515 M Flip Chip Hybrid Package Apps Proc PWB Power Management IC PM 8921 WLP Package Fine Pitch Packages (≤ 0. 4 mm BGA pitch, up to 1000 I/O, in <15 mm package) i. Fixit 13
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Handset Thickness Decreasing Over Time - where will it stop? 13 12 i. Phone 2 G mm 11 Experia SL (Sony) HD 2 (HTC) 10 Lumia 820 (Nokia) Galaxy S (Sam) 9 i. Phone 4 S 8 Galaxy S 3 (Sam) 7 Droid Razr (Mot) 6 5 2006 Grand S (ZTE) Athena (ZTE) 2007 2008 2009 2010 2011 2012 2013 ? 2014 Year Other Trends Ultimate challenge: Thermal • • • Area Increasing, Larger Screens Battery Volume Constant Phone Volume decreasing, but stabilizing 15
Thickness Comparison of Mobile Packages Standard issue US Penny Apps Processor Apps Proc Molded Laser Po. P LTE Modem Hybrid (FC & WB) PMIC Apps Proc Bare Die Po. P PMIC WLP Includes BGA Balls 16
Logic CMOS Scaling Conventional transistor scaling gets more challenging! Novel device structures and materials have to be incorporated to keep scaling. 17
CMOS Scaling Difficulty −Decreasing Cost/Gate roll-off 18
Packaging Solution Challenges for Mobile Applications Materials and Processes Mechanical Challenges - Low K and Lower K dielectrics - Cu Pillar (Pb free) - Fine pitch FC bumps/u. Bumps - Low CTE, High Modulus Substrate Materials - Ultra thin die - CTE mismatch - Warpage Control - Preserving Si Strain Eng. So. C Si. P Thermal Challenges Electrical Challenges - Poor thermal paths - No air flow, Closed system - 3 D integration - Signal Integrity - Power Distribution - Functional Partitioning © 2013 QUALCOMM Technologies Incorporated. All rights reserved 19
Substrate Core CTE changes in last 5 years to control package warpage Core Material CTE 16 Next trend will be to drive increased modulus 14 12 New Materials, e. g. , glass? 10 8 CTE (PPM) 6 4 2 0 2008 2009 © 2013 QUALCOMM Incorporated. All rights reserved 2011 2013 2014 20
Mobile Architecture Tsunami 21
Mobile Architecture “Tsunami” 3 D Logic on Logic 3 D Si Interposer Split Die 2. 5 D Module Integration Highly Disruptive & revolutionary changes that will impact many aspects of technology and industry Chipset integration Passive Integration Fan Out WLP Glass Interposer HD Laminate Phone on Flex Smart Phone on package Phone on Glass 22
2. 5 D / 3 D Stacking Roadmap Current Focus: Wide IO DRAM on Logic = TSS Next: Logic on Logic / Interposer / Both … Phone 3 D Integration Levels driven TSS Logic on Logic TSS Wide. IO Memory on Logic TSS Everything Not-Phone driven TSS Wide. IO DRAM with Logic Interposer W/B & FC Bump Stacking POP Heterogeneous Interposer Logic & DRAM LPDDRx on Logic current PAGE 23 © 2014 QUALCOMM Incorporated. All rights reserved time
3 D X-Ray Image of TSS • X-Ray Tomographic images show well-formed features TSV s µ-bumps BGA PAGE 24 © 2014 QUALCOMM Incorporated. All rights reserved FC Bump
What’s Next? -- Low Cost Interposer (LCI) Format: Fine pitch Foundry Interposer - 1 Laminate MCM LCI? Supply Chain: - PAGE 25 © 2014 QUALCOMM Incorporated. All rights reserved c-Si p-Si glass advanced laminate wafer, panel, …? Wafer foundry OSAT display PV PCB, …?
Embedded Substrate Description Bump Blind Via Solder Resist Build-up Layer Core Layer Build-up Layer Solder Ball Die a) Active Die Inner Via Solder Ball MLCC b) MLCC Inner Via c) Via from Both Sides ☞ Component placed at the center of the thickness direction of substrate Warpage resistive Good compatibility with conventional PCB process (lamination and laser via process) ☞ No special equipment or foreign adhesive material inside the structure Conventional SMT machine or FC bonder modified for large working and thin panel No adhesive resin used but only PCB resin is filled in the space (simple and highly reliable) ☞ Enhanced power stability using both side interconnection of blind via (figure c) Courtesy of SEMCO (ACI gro PAGE 26
Embedded Modules Trend 27
3 G Modules 28
TDK SESUB Battery Charging Module • • • Charge/input current: up to 4 A Input voltage range: 3. 7 V to 15 V Automatic DC Input evaluation – Automatic Power Source Detection Term Description APSD Automatic. Power. Source. Detection(USBBC 1. 2) AICL Automatic. Input. Current. Limit AFVC Automatic. Float. Voltage. Control AIVD Automatic. Input. Voltage. Detection HVDCP High. Voltage. Dedicated. Charging. Port – Automatic Input Voltage Detection – Automatic Input Current Limit • Can support Quick. Charge 2. 0 for 75% faster charging time • Automatic float voltage compensation User pad: 0. 5 mm pitch 13 x 10 matrix 94 pads Courtesy of TDK PAGE
Fan Out WLP “Emergence”– TSMC’s In. FO PAGE 30 Courtesy TSMC of
Challenges and Directions for Mobile IC Packaging Tremendous growth in mobile devices worldwide Drives need for innovation Funds innovation IC Packaging is Challenged to meet form factor and bandwidth requirements X, Y, and Z reductions New Materials and package constructions need to be continually developed Thermal management and solutions are significant issues for passively cooled closed systems Low cost versions implementations of 2. 5 and 3 D required Modules (higher integration) allow for size reduction Consumer space is extremely cost sensitive Conversion of CSP to WLP when possible Internet of Everything drives future growth moving forward Everything connected Bandwidth requirements projected need to grow by 1000 X Must keep perceived constraints from stifling innovation PAGE 31 Can an effective low cost active solution be developed? Balance the needs of all stakeholders © 2014 QUALCOMM Incorporated. All rights reserved
Wrap Up: Journey Ahead 32
The Game is Changing Shift SOC vs. Multichip Diminishing Cost Reduction + “More than Moore” + High Density TSV SOC TSV/interposer Multichip Si. P new chipset architectures Multichip “modules” with Integrated passives Multichip Si. P 33
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