2 Introduction to Design Rules Etienne Sicard etienne

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2. Introduction to Design Rules Etienne Sicard etienne. sicard@insa-tlse. fr http: //intrage. insa-tlse. fr/~etienne

2. Introduction to Design Rules Etienne Sicard etienne. sicard@insa-tlse. fr http: //intrage. insa-tlse. fr/~etienne E. Sicard - Design rules

Summary 1. Why confidentiality 2. Lambda based design 3. Basic design rules 4. Interconnect

Summary 1. Why confidentiality 2. Lambda based design 3. Basic design rules 4. Interconnect design rules 5. Supply design rules 6. Conclusion 6/16/2021 E. Sicard - Design rules 2

1. Why Confidentiality • Extremely strict in the past • Non-disclosure agreement • No

1. Why Confidentiality • Extremely strict in the past • Non-disclosure agreement • No copy but • Most info is available on the web • SIA roadmap predict rules for the next 10 years • The document includes specific advances and weaknesses of the technology 6/16/2021 E. Sicard - Design rules 3

2. Lambda based design • Layout drawn on an integer grid • Grid unit

2. Lambda based design • Layout drawn on an integer grid • Grid unit fixed to = half of technology forever Poly gate = 2 0. 12µm, = 0. 06µm 6/16/2021 E. Sicard - Design rules 4

2. Lambda based design Good points • Enables technology changes • Enable design reuse

2. Lambda based design Good points • Enables technology changes • Enable design reuse • Reduce design cost Bad points • Not optimal design • Rarely used in industry 6/16/2021 E. Sicard - Design rules 5

3. Basic design rules 4 N-channel MOS 6 6 N+ Metal 3 2 Not

3. Basic design rules 4 N-channel MOS 6 6 N+ Metal 3 2 Not optimal but design reuse 6/16/2021 E. Sicard - Design rules 6

3. Basic design rules P-channel MOS P+ 6 0 3 No floating well 6/16/2021

3. Basic design rules P-channel MOS P+ 6 0 3 No floating well 6/16/2021 2 N+ nwell 2 E. Sicard - Design rules 7

3. Basic design rules Inverter with same n. MOS and p. MOS sizes 6/16/2021

3. Basic design rules Inverter with same n. MOS and p. MOS sizes 6/16/2021 p. MOS carriers are twice slower than n. MOS carriers E. Sicard - Design rules Demo 8

3. Basic design rules • Minimize spared diffusion • Use minimum poly width (2

3. Basic design rules • Minimize spared diffusion • Use minimum poly width (2 ) 6/16/2021 E. Sicard - Design rules • 1 contact = 1 m. A • Multiply contacts 9

3. Basic design rules • Same N and P alters symmetry 6/16/2021 E. Sicard

3. Basic design rules • Same N and P alters symmetry 6/16/2021 E. Sicard - Design rules • L min • Wpmos=2 Wnmos 10

3. Basic design rules 2 metal 3 metal • Routing strategy metal 2 vertical,

3. Basic design rules 2 metal 3 metal • Routing strategy metal 2 vertical, metal 3 horizontal 6/16/2021 • Supply in metal 3 • Use stacked vias E. Sicard - Design rules 11

3. Basic design rules Design Rule Checker 6/16/2021 E. Sicard - Design rules 12

3. Basic design rules Design Rule Checker 6/16/2021 E. Sicard - Design rules 12

4. Interconnect design rules • Up to 6 metal layers • Metal 2, 3,

4. Interconnect design rules • Up to 6 metal layers • Metal 2, 3, 4 identical • Metal 5, 6 thicker, larger to be used for supply and long routing 6/16/2021 E. Sicard - Design rules 13

4. Interconnect design rules Demo 6/16/2021 E. Sicard - Design rules 14

4. Interconnect design rules Demo 6/16/2021 E. Sicard - Design rules 14

5. Supply design rules Aluminum is sensitive to electromigration • metal 2, 3, 4:

5. Supply design rules Aluminum is sensitive to electromigration • metal 2, 3, 4: 1. 5 m. A/µm • metal 5, 6: 3 m. A/µm • contact, vias: 1 m. A 1% fail in 20 years, 125°C 6/16/2021 E. Sicard - Design rules 15

Conclusion • Confidentiality protects advances and weaknesses • Lambda-based design features easy reuse •

Conclusion • Confidentiality protects advances and weaknesses • Lambda-based design features easy reuse • Basic rules investigated • Interconnect design rules described • Power supply design rules introduced • Illustration made for 0. 12µm 6/16/2021 E. Sicard - Design rules 16