1068 1064 1060 1056 1052 1048 1044 1040

1068 1064 1060 1056 1052 1048 1044 1040 1036 1032 1028 1024 1020 1018 1016 1015 1012 109 108 106 104 103 102 101 0 SI system 無量大數 不可思議 那由他 阿僧祇 恒河沙 極 載 正 澗 溝 穰 杼 垓 exa(E) 京 兆 peta(P) tera(T) giga(G) 億 mega(M) 万 千 百 十 零 kilo(k) hecto (h) deka(da) 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 -7 10 -8 10 -9 10 -10 10 -11 10 -12 10 -13 10 -14 10 -15 10 -16 10 -17 10 -18 10 -19 10 -20 10 -21 分 厘 毛 糸 忽 微 織 沙 塵 埃 渺 漠 模糊 逡巡 須臾 瞬息 彈指 剎那 六德 虛空 清淨 SI system deci(d) centi(c) milli(m) micro(u) nano(n) pico(P) femto(f) atto(a)

This image of 112 carbon monoxide molecules on a copper surface was made at IBM’s Almaden Research Center using a scanning tunneling microscope. Each letter is 4 nm high by 3 nm wide. About 250 million n a n o l e t t e r s of this size could be written on a cross section of a human hair; this corresponds to 300 -page books. President Clinton used the image to unveil NNI.

Schematic of tip and sample interaction for STM.

閘極限寬 Memory and Logic Technology Requirements 1997 250 nm 1999 180 nm 2003/4/24 130 nm 2005 100 nm Min. Logic Vdd(V) (desktop) 2. 5 -1. 8 -1. 5 Vdd Variation < 10% 1. 5 -1. 2 -0. 9 -0. 6 -0. 5 ≦ 10% ≦ 10% Tax Equivalent (nm) 4 -5 3 -4 2 -3 1. 5 -2 < 1. 5 <1. 0 Equivalent Maximum E-field (MV / cm) 4 -5 5 >5 >5 >5 1 1 3 3 3 10 10 600/280 600/280 16 -17 12 -13 10 -12 9 -10 7 4 -5 3 -4 60 50 45 40 40 V 3σ Variation (For normal L device) < 10% < 10% Voff 3σ Variation (For normal L device; of Loff) < 20% < 20% S/D Extension Junction Depth. Nominal (nm) 50 -100 36 -72 30 -60 25 -52 20 -40 15 -30 10 -20 Total Series Resistance of S/D (% of channel resistance < 10% < 10% 4 -6 4 6 <5 <5 Year of first Product Shipment Technology Generation Max Ioff @25℃(μA/μm) (For minimum L device) Nominal Ion @25℃(μA/μm) (NMOS / PMOS) Gate Delay Metric (CV / I)(ps) VT 3σ Variation (±m. V) (For minimum L device) Gate Sheet Resistance (Ω (Ω/ sq) 2001 150 nm 1009 70 nm 2012 50 nm Consistnet with the linear scaling per generation Isolation Pitch 6 6 -7 7 7 7 -8 8 -9 9 0. 50 -0. 75 0. 36 -0. 54 0. 30 -0. 45 0. 26 -0. 39 0. 2 -0. 3 0. 14 -0. 21 0. 10 -0. 15 0. 56 0. 22 0. 14 0. 09 0. 036 0. 014 0. 006 1000 1000 DRAM Retention Time (ms) 64 -128 128 -256 - 256 -512 512 -1024 -2048 -4096 Flash Data Retention (year) 10 10 0. 6 0. 3 0. 22 0. 15 0. 08 0. 04 0. 02 +/－ Vpp 8. 5 8 8 7. 5 7 6. 5 6 Tunnel Oxide (nm) 8. 5 8 8 7. 5 7 6. 5 6 100 K 100 K 6 7. 5 9 10. 5 12 13. 5 15 Interconnet Levels Short Wire Pitch (μ (μm) DRAM Cell Rate (μ (μm 2) Soft Error Rate (FITs)) NOR Cell Size (μ (μm 2) Flash Endurance (erase/write cycles) ESD Protection Voltage (V/μm) Solutions Exist Solutions Being Pursued No Known Solution

Speaker : Shie-Ming Peng (彭旭明)

分子金屬導線 (Length) STM tip 12. 9 Å 8. 2 Å 3. 8 Å 21. 3 Å Au surface (111) Ni 7 > Ni 5 > Ni 3 C 16 H 33 SH 23. 9 Å 19. 4 Å 14. 8 Å

分子金屬導線 (Metal) STM tip 9. 9 Å 7. 1 Å 3. 8 Å 21. 3 Å 14. 8 Å Cr 3 > Co 3 > Ni 3

分子金屬導線 (Metal) STM tip 12. 7 Å 9. 8 Å Cr 3 > Co 3 > Ni 3 7. 1 Å C 12 H 25 SH 16. 1 Å 14. 8 Å

分子金屬導線 (Table) Metal string complex Alkylthiol Mean measured height(Å) Range of height(Å) [Ni 3( 3 -dpa)4(NCS)2] C 16 H 33 SH 3. 8(2) 3. 6 - 4. 2 [Ni 5( 5 -tpda)4(NCS)2] C 16 H 33 SH 8. 2(2) 7. 8 - 8. 5 [Ni 7( 7 -teptra)4(NCS)2] C 16 H 33 SH 12. 9(8) 11. 7 - 14. 5 [Ni 3( 3 -dpa)4(NCS)2] C 16 H 33 SH 3. 8(2) 3. 6 - 4. 2 [Co 3( 3 -dpa)4(NCS)2] C 16 H 33 SH 7. 1(8) 5. 2 - 8. 3 [Cr 3( 3 -dpa)4(NCS)2] C 16 H 33 SH 9. 9(11) 7. 5 - 11. 5 [Ni 3( 3 -dpa)4(NCS)2] C 12 H 25 SH 7. 1(9) 5. 7 - 8. 5 [Co 3( 3 -dpa)4(NCS)2] C 12 H 25 SH 9. 8(7) 8. 9 - 10. 9 [Cr 3( 3 -dpa)4(NCS)2] C 12 H 25 SH 12. 7(6) 11. 8 - 13. 6

分子開關 STM tip 12 Å 14 Å18 Å off on 13 14ÅÅ off on

分子開關 Metal string complex Neutral Oxidized [Ni 5( 5 -tpda)4(NCS)2] 12 Å 14 Å [Co 5( 5 -tpda)4(NCS)2] 14 Å 13 Å [Cr 5( 5 -tpda)4(NCS)2] 18 Å 13 Å