Summer School for Integrated Computational Materials Education 2018

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Summer School for Integrated Computational Materials Education 2018 Kinetics Module Review Katsuyo Thornton, 1

Summer School for Integrated Computational Materials Education 2018 Kinetics Module Review Katsuyo Thornton, 1 Edwin Garcia, 2 Larry Aagesen, 3 Mark Asta 4, Jonathan Guyer 5 1. 2. 3. 4. 5. Department of Materials Science & Engineering, University of Michigan Purdue University Idaho National Laboratory University of California, Berkeley National Institute of Standards and Technology

Purposes of Kinetics Module • Develop deeper understanding of diffusive transport through hands-on exercises.

Purposes of Kinetics Module • Develop deeper understanding of diffusive transport through hands-on exercises. • Learn how computational tools can be used to determine concentration profiles during diffusion. • Demonstrate the technological importance of diffusion through an application to a semiconductor processing problem. Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 4 -15, 2018 2

Concepts Illustrated Through Kinetics Module 1. Diffusion – – – Driving Force Fick’s Law

Concepts Illustrated Through Kinetics Module 1. Diffusion – – – Driving Force Fick’s Law Mass Conservation 2. Semiconductor Processing 3. Computational Kinetics 4. Fi. Py Part 1 Part 2 Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 4 -15, 2018 3

Driving Force for Diffusion • Consider 1 D diffusion. • The atoms are randomly

Driving Force for Diffusion • Consider 1 D diffusion. • The atoms are randomly hopping right and left. • Half the atoms are moving toward right, and the other half is moving to left. Concentration • Below, left side has more atoms than right. • Net flux toward the low concentration. • Driving force = High conc. Low conc. Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 4 -15, 2018 x 4

Fick’s First Law • The flux is proportional to the driving force. • The

Fick’s First Law • The flux is proportional to the driving force. • The proportionality constant is the diffusion coefficient. high concentration J dc J dx low concentration Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 4 -15, 2018 5

Solution to the Diffusion Equation • For a fixed concentration on one end of

Solution to the Diffusion Equation • For a fixed concentration on one end of semiinfinite domain, an analytical solution exists. • Cs = the surface concentration • C 0 = initial condition Co = C(x, t=0) . . . Cs = C(x=0, t) Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 4 -15, 2018 6

Mass Conservation • Mass must be conserved. • Difference in flux will lead to

Mass Conservation • Mass must be conserved. • Difference in flux will lead to change in concentration (accumulation or depletion). • Mass conservation equation: • In 1 D: Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 4 -15, 2018 7

Semiconductor Device Processing oxide passivation metallic conductors active devices (transistors, etc. ) silicon chip

Semiconductor Device Processing oxide passivation metallic conductors active devices (transistors, etc. ) silicon chip • Manufacture millions of devices simultaneously on a “chip” • Steps in manufacture (simplified) – Crystal growth and dicing to “chip” – Photolithography to locate regions for doping – Doping to create n-type regions (can in some cases be done during growth) – Overlay to create junctions – Metallization to interconnect devices – Passivation to insulate and isolate devices – Higher level “packaging” to interconnect chips Based on figures from MSE 201 course notes of J. W. Morris, Jr. , University of California, Berkeley Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 4 -15, 2018

Photolithography • Minimum feature size depends on wavelength of “light” – – Visible light:

Photolithography • Minimum feature size depends on wavelength of “light” – – Visible light: ~ 1 µm Ultraviolet light: ~ 0. 1 µm Electrons, x-rays 0. 1 -1 nm New and exotic methods • Must have photoresist suitable to the “light” – Or use “light” to cut through oxide directly Based on figures from MSE 201 course notes of J. W. Morris, Jr. , University of California, Berkeley Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 4 -15, 2018

Doping dopant ions • Add electrically active species • Simple method • More precise:

Doping dopant ions • Add electrically active species • Simple method • More precise: Ion implantation dopant distribution – Coat surface and diffuse – Expose surface to a vapor and allow interdiffusion – Diffusion field is electrically active – Accelerate ions of the electrically active species toward surface – Ions embed to produce doped region Based on figures from MSE 201 course notes of J. W. Morris, Jr. , University of California, Berkeley Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 5 -16, 2017

Doping: The Chemical Distribution implantation laser anneal c laser light dopant distribution diffusion x

Doping: The Chemical Distribution implantation laser anneal c laser light dopant distribution diffusion x • Initial distribution is inhomogeneous • Can homogenize by “laser annealing” – Diffusion produces gradient from surface – Ion implantation produces concentration at depth beneath surface – Use a laser to melt rapidly, locally – Rapid homogenization in melted region – Rapid re-solidification since rest of body is heat sink Based on figures from MSE 201 course notes of J. W. Morris, Jr. , University of California, Berkeley Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 5 -16, 2017

Overlay to Create Junctions n n p • Once primary doping is complete –

Overlay to Create Junctions n n p • Once primary doping is complete – – Re-coat Re-mask Re-pattern Dope second specie to create desired distribution of junctions Based on figures from MSE 201 course notes of J. W. Morris, Jr. , University of California, Berkeley Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 4 -15, 2018

Part 2. Introduction to Computational Kinetics Summer School for Integrated Computational Materials Education Ann

Part 2. Introduction to Computational Kinetics Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 4 -15, 2018 13

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What is Fi. Py? • Simply put: – Is a set of python libraries

What is Fi. Py? • Simply put: – Is a set of python libraries to solve PDEs • In more detail: – Provides a numerical framework to solve for the finite-volumes equation – The emphasis is on microstructural evolution Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 4 -15, 2018 17

Fi. Py Resources • Fi. Py Manual (tutorials and useful examples) • Fi. Py

Fi. Py Resources • Fi. Py Manual (tutorials and useful examples) • Fi. Py Reference (what every single command does) • Mailing List: fipy@nist. gov • You can also email the coauthors: • John Guyer: guyer@nist. gov • Dan Wheeler: daniel. wheeler@nist. gov • Fi. Py Website http: //www. ctcms. nist. gov/fipy/ Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 4 -15, 2018 18

A PDE is Solved in Five Steps • Variables Definitions • Equation(s) Definition(s) •

A PDE is Solved in Five Steps • Variables Definitions • Equation(s) Definition(s) • Boundary Condition Specification • Viewer Creation • Problem Solving Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 4 -15, 2018 19

Step-By-Step Walk-Though Follows Summer School for Integrated Computational Materials Education Ann Arbor, MI, June

Step-By-Step Walk-Though Follows Summer School for Integrated Computational Materials Education Ann Arbor, MI, June 4 -15, 2018 20