Anlisis de detectores de diamante monocristalinos con protones

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Análisis de detectores de diamante monocristalinos con protones de baja energía M. C. Jiménez

Análisis de detectores de diamante monocristalinos con protones de baja energía M. C. Jiménez Ramos, J. García López, C. Cazzaniga, M. Rebai VIII CPAN 28 -30 Noviembre 2016 Zaragoza

CNA LOW ENERGY NUCLEAR PHYSICS MATERIALS CHARACTERISATIO N DETECTORS CHARACTERIZATION NEUTRON BEAMLINE ION IMPLANTATION

CNA LOW ENERGY NUCLEAR PHYSICS MATERIALS CHARACTERISATIO N DETECTORS CHARACTERIZATION NEUTRON BEAMLINE ION IMPLANTATION IRRADIATION - All stable ions available: H - Au DAMAGE - Energy range: 600 ke. V – few Me. V - Beam currents: m. A - p. A - Continuous and pulsed beams VIII CPAN DAYS 28 -30 Noviembre 2016 Zaragoza

VACUUM MICRO BEAM LINE - Particle detectors (PIPS) - X-ray detector (Si. Li) -Microscope

VACUUM MICRO BEAM LINE - Particle detectors (PIPS) - X-ray detector (Si. Li) -Microscope - Ion beam size ~ 4 x 4 μm 2 - Beam current: n. A to few pps (micrometric slits) - Scanning system: few mm 2 -Synchronous signal acquisition system with scanning: mappings VIII CPAN DAYS 28 -30 Noviembre 2016 Zaragoza

What is Ion Beam Induced Charge? Deposited energy Free charge generation and transport +

What is Ion Beam Induced Charge? Deposited energy Free charge generation and transport + Ouput signal Vout = F (deposited energy, free carrier transport) VIII CPAN DAYS 28 -30 Noviembre 2016 Zaragoza

What is Ion Beam Induced Charge? IONS - p, , Li, C, O, .

What is Ion Beam Induced Charge? IONS - p, , Li, C, O, . . POSITION RANGE - Focusing and scanning - 1 to 1000 m 100 p. A current – 620 ions in 1 s signal ion beam +V RATE -017: 27 103 p/s . 01 f. A current – 620 ions/second VIII CPAN DAYS 28 -30 Noviembre 2016 Zaragoza 4 µm

¿Por qué buscar alternativas al Si? Properties of diamond, 4 H–Si. C and Si

¿Por qué buscar alternativas al Si? Properties of diamond, 4 H–Si. C and Si crystals M. Moll , NIM in Physics Research A 511 (2003) 97– 105 Property Diamond 4 H–Si. C Si Eg (e. V) 5. 5 3. 27 1. 12 μe (cm 2 V s− 1) 1800 1500 μh (cm 2 V s− 1) 1200 115 450 e–h energy (e. V) 13 8. 4 3. 6 Displacem. (e. V) 43 25 13 -20 Density (g cm− 3) 3. 52 3. 21 2. 33 Intrinsic carriers at (300 K) (cm-3) <1 x 10 -26 6. 7 x 10 -11 1. 4 x 1010 VIII CPAN DAYS 28 -30 Noviembre 2016 Zaragoza Mayor gap: menor corriente inversa que el Si Mayor umbral de desplazamiento: Más resistentes a la radiación que el Si Menor concentración de portadores intrínsecos: Comportamiento semiconductor a altas temperaturas

Diamond Detector Applications A wide range of detector applications and detector types make diverse

Diamond Detector Applications A wide range of detector applications and detector types make diverse demands on the material • Particle physics: beam condition monitors, trackers • Dosimetry: radiation therapy, equipment calibration • Synchrotrons: white beam monitoring • UV detectors: photolithography , flame detection and solar physics • Alpha/Beta: air-Flow and survey meters, waste incineration • Nuclear applications: nuclear reactors and fusion experiments VIII CPAN DAYS 28 -30 Noviembre 2016 Zaragoza

Colaboración Dipartimento di Fisica G. Occhialini Università Milano-Bicocca Diamond A: crystal 4. 5 x

Colaboración Dipartimento di Fisica G. Occhialini Università Milano-Bicocca Diamond A: crystal 4. 5 x 0. 5 mm 3 and large gold contacts Diamond B: crystal 2. 0 x 0. 3 mm 3 and contact 0. 5 x 0. 5 mm 2 VIII CPAN DAYS 28 -30 Noviembre 2016 Zaragoza

Results: CCE 100% CCE Scan: 2. 5 x 2. 5 mm 2 Maps of

Results: CCE 100% CCE Scan: 2. 5 x 2. 5 mm 2 Maps of diamond B recorded at -240 V VIII CPAN DAYS 28 -30 Noviembre 2016 Zaragoza 50% CCE

Results: Polarization Efect To observe PE the diamond detector was irradiated at V= -240

Results: Polarization Efect To observe PE the diamond detector was irradiated at V= -240 V in a 100 µm x 100 µm scan area with 1 Me. V protons. Each spectrum was recorded during 30 s with a count rate about 150 cps. Therefore, the fluence accumulated per spectrum is around 4. 5 107 p/cm 2 To recover the detector from the PE, the same area was irradiated with bias at V=+240 V. Each spectrum was recorded during 60 s with a count rate about 900 cps. Therefore, the fluence accumulated per spectrum is around 5. 4 108 p/cm 2. The full recovery takes place at about 4 x 109 p/cm 2. VIII CPAN DAYS 28 -30 Noviembre 2016 Zaragoza

Results: Polarization Efect Polarization Effects induce the evolution of the CCE versus fluence for

Results: Polarization Efect Polarization Effects induce the evolution of the CCE versus fluence for 1 and 3 Me. V protons. VIII CPAN DAYS 28 -30 Noviembre 2016 Zaragoza

Results: Permanent Damage We irradiated a spot of 50 µm x 50 µm for

Results: Permanent Damage We irradiated a spot of 50 µm x 50 µm for 630 s with a particle flux of 2∙ 109 s-1 cm-2 ( ≈ 5∙ 104 cps), accumulating a total fluence 1∙ 1012 protons/cm 2. Scan: 500 x 500 µm 2 VIII CPAN DAYS 28 -30 Noviembre 2016 Zaragoza

Thanks for your attention !!! M. C. Jiménez Ramos: mcyjr@us. es VIII CPAN DAYS

Thanks for your attention !!! M. C. Jiménez Ramos: mcyjr@us. es VIII CPAN DAYS 28 -30 Noviembre 2016 Zaragoza