HDPCVD 1 System Maker Applied Materials Inc 2
- Slides: 29
HDPCVD技術資料
1. System Maker : Applied Materials. Inc 2. System Model : Centura 5200 3. Serial Number : 35605 -03 4. Mainframe : Ultima HDP MF w/Multi-Slot 5. Load Lock : Nerrow Body 6. Wafer Size : 200 mm SNNF 7. Chamber Type & Quantity : Chamber : A =Ultima Plus Chamber : D = Dx. Z 8. Other Chambers : Ch#E (MSCD) Ch#F Orienter 9. RF Generator : ETO Generator, RFG-2000 -2 V 10. RPC : MKS - AX 7670 11. Robot Type : HP Robot 12. Turbo Pump : EBARA – ET 1600 W
Chamber “A” HDP (HDP 1. 0 K), Temperature < 400 ℃ Depo Rate Recipe D/T T/V step RF (TOP) RF (SIDE) RF (BIAS) Temp AR AR-T O 2 SIH 4 -T HDP-1. 0 K-R 9. 5” 1100 1000 w 3400 w 2900 w 400℃ 120 16 133 62 10. 6 Item 1 2 3 4 5 6 7 8 9 Thickness 1114 1025 1043 1025 1010 1033 1094 1007 1060 AVG Range Unif. % Depo rate. N GOF 1046Å 107 Å 3. 533 6600Å/min 1. 452 98. 86% Results Chamber A 高密度電漿 製程腔體 Dep. rate Real required 6600 Å/min >500 Å/min
PROCESS DATA Chamber “A” HDP (HDP 1. 0 K), Temperature < 400 ℃ Thickness [ Chamber “A” HDP (Thickness Spec : 1000Å ± 50Å) ]
PROCESS DATA Chamber “A” HDP (HDP 1. 0 K), Temperature < 400 ℃ within/wafer U% Chamber “A” HDP PE-OX-1. 0 K, < 400 Deg Item 1 2 3 4 5 6 7 8 9 Thickness 1114 1025 1043 1025 1010 1033 1094 1007 1060 AVG Range Unif. % Depo rate. N GOF 1046Å 107 Å 3. 533 6600Å/min 1. 452 98. 86% Results Chamber A 高密度電漿 製程腔體 Real required 3. 533% ＜ 4%
PROCESS DATA Chamber “A” HDP (HDP 1. 0 K), Temperature < 400 ℃ 連續製程wafer to wafer U% Chamber “A” HDP ( HDP-1. 0 K-R, < 400 Deg ) Slot Recipe Min Max Range AVG U/F % N value 1 st HDP-1. 0 K-R 987 1085 98 1037 3. 71 1. 466 25 th HDP-1. 0 K-R 1003 1102 98 1050 3. 58 1. 466 26 th HDP-1. 0 K-R 997 100 1046 3. 59 1. 466 50 th HDP-1. 0 K-R 998 1095 96 1046 4. 56 1. 465 Results Chamber A 高密度電漿 製程腔體 Real required 3. 86% ＜ 4%
PROCESS DATA Chamber “A” HDP (HDP 1. 0 K), Temperature < 400 ℃ ‘N’ Value Chamber “A” HDP ( ‘N’ Value Spec : 1. 465 ± 0. 015 )
PROCESS DATA Chamber “A” HDP (HDP 1. 0 K), Temperature < 400 ℃ Wafer Temperature Results Chamber A 高密度電漿 製程腔體 Real required 399℃ ＜ 400℃
PROCESS DATA Chamber “A” HDP (HDP 1. 0 K), Temperature 600 ℃ ± 50 ℃ Depo Rate Chamber “A” HDP ( HDP-1. 0 K-R, < 600℃ ± 50℃ ) Recipe D/T T/V step RF (TOP) RF (SIDE) RF (BIAS) Temp AR AR-T O 2 SIH 4 -T HDP-1. 0 K-RT 9. 5” 1100 1000 w 3400 w 2900 w 600℃ 120 16 133 62 10. 6 Item Thickness 1 2 3 4 5 6 7 8 9 1103 1015 1028 1008 982 1022 1089 993 1033 AVG Range Unif. % Depo rate. N GOF 1030Å 120 Å 3. 949 6505Å/min 1. 470 99. 86% Results Chamber A 高密度電漿 製程腔體 Dep. rate Real required 6505 Å/min >500 Å/min
PROCESS DATA Chamber “A” HDP (HDP 1. 0 K), Temperature 600 ℃ ± 50 ℃ Thickness 7 -2 -2. Chamber “A” HDP (Thickness Spec : 1000Å ± 50Å)
PROCESS DATA Chamber “A” HDP (HDP 1. 0 K), Temperature 600 ℃ ± 50 ℃ within/wafer U% Chamber “A” HDP ( HDP-1. 0 K-R, 600℃ ± 50℃ ) Item Thickness 1 2 3 4 5 6 7 8 9 1103 1015 1028 1008 982 1022 1089 993 1033 AVG Range Unif. % Depo rate. N GOF 1030Å 120 Å 3. 949 6505Å/min 1. 470 99. 86% Results Chamber A 高密度電漿 製程腔體 Real required 3. 949% ＜ 4%
PROCESS DATA Chamber “A” HDP (HDP 1. 0 K), Temperature 600 ℃ ± 50 ℃ 連續製程wafer to wafer U% Chamber “A” HDP ( HDP-1. 0 K-R, 600℃ ± 50℃ ) Slot Recipe Min Max Range AVG U/F % N value 1 st HDP-1. 0 K-RT 1001 1119 118 1051 3. 98 1. 465 25 th HDP-1. 0 K-RT 1006 1102 96 1053 3. 59 1. 465 26 th HDP-1. 0 K-RT 1004 1101 96 1052 3. 53 1. 465 50 th HDP-1. 0 K-RT 1000 1100 99 1049 3. 38 1. 465 Results Chamber A 高密度電漿 製程腔體 Real required 3. 62% ＜ 4%
PROCESS DATA Chamber “A” HDP (HDP 1. 0 K), Temperature 600 ℃ ± 50 ℃ N’ Value Chamber “A” HDP ( ‘N’ Value Spec : 1. 465 ± 0. 015 )
PROCESS DATA Chamber “A” HDP (HDP 1. 0 K), Temperature 600 ℃ ± 50 ℃ Wafer Temperature Results Chamber A 高密度電漿 製程腔體 Real required 597℃ 600℃± 50 ℃
Chamber “D” Dx. Z (Si. O 2 1. 0 K) Depo Rate Chamber “D” DXZ ( PE-OX-1. 0 K ) Recipe D/T Servo HFRF Temp Spacing SIH 4 N 2 O PE-OX-1. 0 K-R 8. 7” 2. 7 Torr 270 w 400℃ 550 mils 68 2000 Item 1 2 3 4 5 6 7 8 9 Thickness 1011 1016 1024 1012 1031 1011 1022 1012 1065 AVG Range Unif. % Depo rate N GOF 1023 Å 54 Å 1. 689 7055Å/min 1. 461 99. 33 % Results Chamber D 高沈積率 製程腔體 Real required 7055Å/min >2000Å/min
Chamber “D” Dx. Z (Si. O 2 1. 0 K) Thickness Chamber “D” DXZ ( PE-OX-1. 0 K ) Results Chamber D 高沈積率 製程腔體 Real 1023. 3 A required 1000± 50 A
Chamber “D” Dx. Z (Si. O 2 1. 0 K) within/wafer U%： Chamber “D” DXZ ( PE-OX-1. 0 K ) Item 1 2 3 4 5 6 7 8 9 Thickness 1011 1016 1024 1012 1031 1011 1022 1012 1065 AVG Range Unif. % Depo rate N GOF 1023 Å 54 Å 1. 689 7055Å/min 1. 461 99. 33 % Results Chamber D 高沈積率 製程腔體 Real required 7055Å/min >2000Å/min
Chamber “D” Dx. Z (Si. O 2 1. 0 K) 連續製程wafer to wafer U% Chamber “D” DXZ ( PE-OX-1. 0 K ) Slot Recipe Min Max Range AVG U/F % N value 1 st PEOX-1. 0 K-R 1003 1081 78 1026 1. 98 1. 456 25 th PEOX-1. 0 K-R 1003 1087 83 1030 2. 47 1. 456 26 th PEOX-1. 0 K-R 1001 1104 102 1035 2. 98 1. 456 50 th PEOX-1. 0 K-R 990 1040 49 1003 1. 53 1. 456 Results Chamber D 高沈積率 製程腔體 Real required 2. 24% ＜ 4%
Chamber “D” Dx. Z (Si. O 2 1. 0 K) ‘N’ Value Chamber “D” DXZ, Si. O 2 ( ‘N’ Value Spec : 1. 465 ± 0. 015 ) Results Chamber D 高沈積率 製程腔體 Real required 1. 4611 1. 465 ± 0. 015
Chamber “D” Dx. Z (Si. O 2 1. 0 K) Wafer Temperature Results Chamber D 高沈積率 製程腔體 Real required 402. 1℃ 400± 3 ℃
Chamber “D” Dx. Z (PE-Si. N 1. 0 K) Depo Rate Chamber “D” DXZ ( PE-NIT-1. 0 K-R ) Recipe D/T Servo HFRF Temp Spacing SIH 4 N 2 NH 3 PE-NIT-1. 0 K-R 7. 1” 4. 9 Torr 620 w 400℃ 700 mils 220 4000 120 Item Thickness 1 2 3 4 5 6 7 8 9 1012 999 1004 1020 1027 1006 1018 990 1010 AVG Range Unif. % Depo rate N GOF 1010 37 1. 13 8552Å/min 2. 02 99. 8 Results Chamber D 高沈積率 製程腔體 Real required 8552Å/min >2000Å/min
Chamber “D” Dx. Z (PE-Si. N 1. 0 K) Thickness Chamber “D” Dx. Z Si 3 N 4( Thickness Spec : 1000Å ± 50Å ) Results Chamber D 高沈積率 製程腔體 Real required 1010Å 1000Å ± 50Å
Chamber “D” Dx. Z (PE-Si. N 1. 0 K) within/wafer U%： Chamber “D” DXZ ( PE-NIT-1. 0 K-R ) Item 1 2 3 4 5 6 7 8 9 Thickness 1012 999 1004 1020 1027 1006 1018 990 1010 AVG Range Unif. % Depo rate N GOF 1010 37 1. 139 8552Å/min 2. 02 99. 56 % Results Chamber D 高沈積率 製程腔體 Real required 1. 139% ＜ 4%
Chamber “D” Dx. Z (PE-Si. N 1. 0 K) 連續製程wafer to wafer U% Chamber “D” DXZ ( PE-NIT-1. 0 K-R ) Slot Recipe Min Max Range AVG U/F % N value 1 st PE-SIN-1. 0 K-R 1024 1051 26 1040 0. 87 2. 01 25 th PE-SIN-1. 0 K-R 1026 1056 29 1044 1. 00 26 th PE-SIN-1. 0 K-R 1030 1055 24 1045 0. 85 2. 00 50 th PE-SIN-1. 0 K-R 1028 1063 35 1046 1. 12 2. 00 Results Chamber D 高沈積率 製程腔體 Real required 0. 96% ＜ 4%
Chamber “D” Dx. Z (PE-Si. N 1. 0 K) ‘N’ Value Chamber “D” Dx. Z ( ‘N’ Value Spec : 2. 02 ± 0. 03 ) Results Chamber D 高沈積率 製程腔體 Real required 2. 0205 2. 02 ± 0. 03
Chamber “D” Dx. Z (PE-Si. N 1. 0 K) Wafer Temperature Results Chamber D 高沈積率 製程腔體 Real required 399. 4℃ 400℃± 3 ℃
C/V(K/value)-1 高密度電漿製程腔體 k for HDP 400 -Oxide ~ 3. 99 k for HDP 600 -Oxide ~ 4. 16 Results Chamber A 高密度電漿 製程腔體 Real required 3. 99 (400℃) 3. 9~4. 2 (Si. Ox) 4. 16 (600℃) Chamber A 高密度電漿 製程腔體 Real required PASS (400℃) >5 MV/cm 2 (Si. Ox) PASS (600℃)
C/V(K/value)-2 高沈積率製程腔體 k for PE-Oxide ~ 4. 13 k for PE-Si. N ~ 7. 88 Results Chamber D 高沈積率 製程腔體 Real required 4. 13 3. 9~4. 2(Si. Ox) 7. 88 7. 0~9. 0(Si. Nx) Chamber D 高沈積率 製程腔體 Real required PASS > 5 MV/cm 2 (Si. Ox) PASS > 5 MV/cm 2 (Si. Nx)
填洞能力-1(Gap Fill, Via) Results Chamber A 高密度電漿 製程腔體 Real required No VOID
