1 Wu G G Li W C Shen

1. Введение • Wu, G. G. , Li, W. C. , Shen, C. S. , Gao, F. B. , Liang, H. W. , Wang, H. , . . . & Du, G. T. (2012). Near infrared electroluminescence from n-In. N/p-Ga. N lightemitting diodes. Applied Physics Letters, 100(10), 103504.

IR lasing in In. N nanobelts M. S. Hu et al. APL (2007) L=15 -60 m d=40 -250 nm h=10 -35 nm In. N A-Si. Nx Si

Эпитаксиальный рост Hai Lu et al. Growth of Thick In. N by Molecular Beam Epitaxy //Mat. Res. Soc. Symp. Proc. Vol. 743 (2003)

Boundary-Temperature-Controlled Epitaxy In. N Ga. N c-Al 2 O 3 n=1. 47*1017 см-3 μ=3280 см 2/(В*с) Wang X. et al. High-electron-mobility In. N layers grown by boundary-temperature-controlled epitaxy //Applied physics express. – 2012. – Т. 5. – №. 1. – С. 015502.

Boundary-Temperature-Controlled Epitaxy

Квазиодномерные структуры In. N • Mi, Z. , & Zhao, S. (2015). Extending group‐ III nitrides to the infrared: Recent advances in In. N. physica status solidi (b), 252(5), 1050 -1062.

Транзистор на нанопроволоке p-типа • Mi, Z. , & Zhao, S. (2015). Extending group‐ • III nitrides to the infrared: Recent advances in In. N. • physica status solidi (b), 252(5), 1050 -1062.

Рост In. N на подложке In 2 O 3 Sadofev S. et al. Growth of wurtzite In. N on bulk In 2 O 3 (111) wafers //Applied Physics Letters. – 2012. – Т. 101. – №. 17. – С. 172102.

1. Введение • Параметры решетки типа вюрцит (T=300 K): a=3. 533 А; c=5. 693 А [1] • Параметры решетки типа сфалерит: a=4. 98 А [1] n [1] Wu, J. (2009). When group-III nitrides go infrared: New properties and perspectives. Journal of Applied Physics, 106(1), 011101.

Epitaxial lateral overgrowth (ELO)

Epitaxial lateral overgrowth (ELO)

Epitaxial lateral overgrowth (ELO) • Kamimura J. , Kishino K. , Kikuchi A. Growth of very large In. N microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth //Journal of Applied Physics. – 2015. – Т. 117. – №. 8. – С. 084314.

Epitaxial lateral overgrowth (ELO)

Epitaxial lateral overgrowth (ELO)