ENEE 303 1 st Discussion SelfIntroduction Name Yusen

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ENEE 303 1 st Discussion

ENEE 303 1 st Discussion

Self-Introduction • Name: Yusen Fan • Email: ysfan@umd. edu • Office Hour: Tuesdays 10

Self-Introduction • Name: Yusen Fan • Email: ysfan@umd. edu • Office Hour: Tuesdays 10 -12 @ AVW 1143

Contents • Pspice demonstration • Diode, BJT overview

Contents • Pspice demonstration • Diode, BJT overview

Pspice • Tutorial: https: //engineering. purdue. edu/~ee 255/lec turesupp_files/PSpice-Tutorial. pdf

Pspice • Tutorial: https: //engineering. purdue. edu/~ee 255/lec turesupp_files/PSpice-Tutorial. pdf

Pspice diode and transistor models • Can be found on the course website •

Pspice diode and transistor models • Can be found on the course website • e. g. – PSpice diode model for 1 N 4007 – PSpice models for BJT 2 N 390 x transistors

Diode Bipolar Junction Transistors ENEE 303 Fall 2016

Diode Bipolar Junction Transistors ENEE 303 Fall 2016

Current-Voltage Relationship of a pn-Junction

Current-Voltage Relationship of a pn-Junction

Example 4. 2: Multiple Diodes

Example 4. 2: Multiple Diodes

Small-Signal Model • Q: How is small-signal resistance rd defined? • (Slope at the

Small-Signal Model • Q: How is small-signal resistance rd defined? • (Slope at the Q point) – A: From steady-state current (ID) and thermal voltage (VT) as below. • Note this approximation is only valid for smallsignal voltages vd < 5 m. V.

Small-Signal Model • Consider the circuit shown above for the case in which R

Small-Signal Model • Consider the circuit shown above for the case in which R = 10 k. Ohm. • The power supply V+ has a dc value of 10 V over which is superimposed a 60 Hz sinusoid of 1 V peak amplitude (known as the supply ripple) – Q: Calculate both amplitude of the sine-wave signal observed across the diode. • A: vd. (peak) = 2. 68 m. V • Assume diode to have 0. 7 V drop at 1 m. A current.

BJT Bipolar Junction Transistors ENEE 303 Fall 2016

BJT Bipolar Junction Transistors ENEE 303 Fall 2016

• common-emitter current gain (b. ) – is influenced by two factors: –

• common-emitter current gain (b. ) – is influenced by two factors: – width of base region (W) – relative doping of base emitter regions (NA/ND) • High Value of b – thin base (small W in nano-meters) – lightly doped base / heavily doped emitter (small NA/ND)

• All current which enters transistor must leave. • When combined with equations

• All current which enters transistor must leave. • When combined with equations from the previous slides

i. C – v. BE Characteristic for an npn Transistor

i. C – v. BE Characteristic for an npn Transistor

Operation regions of BJT 1. Active mode: BE forward biased, CB reverse biased 2.

Operation regions of BJT 1. Active mode: BE forward biased, CB reverse biased 2. Saturation mode: BE, CB are both forward biased 3. Cut off mode: BE, CB reverse biased

Models for the Operation of the npn BJT in Various Modes npn transistor active

Models for the Operation of the npn BJT in Various Modes npn transistor active mode cutoff mode saturation mode

Example 6. 3 Find VBB to achieve, a) active mode with VCE = 5

Example 6. 3 Find VBB to achieve, a) active mode with VCE = 5 V Assume VBE = 0. 7 V and b = 50. a)

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