Lecture 14 OUTLINE pn junction electrostatics Reading Chapter

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Lecture #14 OUTLINE • pn junction electrostatics Reading: Chapter 5 Spring 2007 EE 130

Lecture #14 OUTLINE • pn junction electrostatics Reading: Chapter 5 Spring 2007 EE 130 Lecture 14, Slide 1

Qualitative Electrostatics Band diagram Electrostatic potential Electric field Charge density Spring 2007 EE 130

Qualitative Electrostatics Band diagram Electrostatic potential Electric field Charge density Spring 2007 EE 130 Lecture 14, Slide 2

“Game Plan” for Obtaining r(x), E(x), V(x) • Find the built-in potential Vbi •

“Game Plan” for Obtaining r(x), E(x), V(x) • Find the built-in potential Vbi • Use the depletion approximation (x) (depletion-layer widths xp, xn unknown) • Integrate (x) to find E(x) – boundary conditions E(-xp)=0, E(xn)=0 • Integrate E(x) to obtain V(x) – boundary conditions V(-xp)=0, V(xn)=Vbi • For E(x) to be continuous at x=0, NAxp = NDxn solve for xp, xn Spring 2007 EE 130 Lecture 14, Slide 3

Built-In Potential Vbi For non-degenerately doped material: Spring 2007 EE 130 Lecture 14, Slide

Built-In Potential Vbi For non-degenerately doped material: Spring 2007 EE 130 Lecture 14, Slide 4

Vbi for “One-Sided” pn Junctions p+n junction Spring 2007 n+p junction EE 130 Lecture

Vbi for “One-Sided” pn Junctions p+n junction Spring 2007 n+p junction EE 130 Lecture 14, Slide 5

The Depletion Approximation On the p-side, = –q. NA q. N d. E =-

The Depletion Approximation On the p-side, = –q. NA q. N d. E =- A es dx E ( x) = - q. N A es x + C 1 = -q. NA es (x + x p ) On the n-side, = q. ND E ( x) = Spring 2007 EE 130 Lecture 14, Slide 6 -q. N D es ( xn - x )

Electric Field in the Depletion Layer The electric field is continuous at x =

Electric Field in the Depletion Layer The electric field is continuous at x = 0 Spring 2007 N Ax p = N Dx n EE 130 Lecture 14, Slide 7

Electrostatic Potential in the Depletion Layer On the p-side: (arbitrarily choose the voltage at

Electrostatic Potential in the Depletion Layer On the p-side: (arbitrarily choose the voltage at x = xp to be 0) On the n-side: Spring 2007 EE 130 Lecture 14, Slide 8

 • At x = 0, expressions for p-side and n-side must be equal:

• At x = 0, expressions for p-side and n-side must be equal: • We also know that NAxp = NDxn Spring 2007 EE 130 Lecture 14, Slide 9

Depletion Layer Width • Eliminating xp, we have: • Eliminating xn, we have: •

Depletion Layer Width • Eliminating xp, we have: • Eliminating xn, we have: • Summing, we have: Spring 2007 EE 130 Lecture 14, Slide 10

One-Sided Junctions If NA >> ND as in a p+n junction: What about a

One-Sided Junctions If NA >> ND as in a p+n junction: What about a n+p junction? where Spring 2007 EE 130 Lecture 14, Slide 11

Example A p+n junction has NA=1020 cm-3 and ND =1017 cm-3. What is a)

Example A p+n junction has NA=1020 cm-3 and ND =1017 cm-3. What is a) its built in potential, b)W , c)xn , and d) xp ? Solution: a) b) c) d) Spring 2007 EE 130 Lecture 14, Slide 12

Summary • For a non-degenerately-doped pn junction at equilibrium: – Built-in potential – Depletion-layer

Summary • For a non-degenerately-doped pn junction at equilibrium: – Built-in potential – Depletion-layer width • For a one-sided (p+n or pn+) junction at equilibrium: – Built-in potential – Depletion-layer width Spring 2007 EE 130 Lecture 14, Slide 13