William Gardner Pfann 1917 1982 Temperature gradient zone

William Gardner Pfann (1917 – 1982) Temperature gradient zone melting Various types of p-n and n-p-n junction devices having critical regions which are protected from atmospheric and-surface effects may be made by producing conductivity regions inside blocks of intrinsic semiconductor material. Fig. 28 is an example of such a device. This device may be constructed in the following manner: Starting with a block 265 of intrinsic material, an area zone containing donor material is caused to traverse block 265 from one surface to the other, for example, from surface 266 to surface 267, so as to produce a high conductivity N-type region, and a line zone producing a low conductivity p-type layer is swept across the high conductivity N-type region so as to produce p-region 268 thereby dividing the high conductivity N-type region, into regions 269 and 270. The resultant device in addition top-type region 268 and N-type regions 269 and 270 contains intrinsic, here denoted I-type, regions 271. Base electrode 272, emitter electrode 273 and collector elecrtrode 274 are made

T. R. Anthony & H. E. Cline Deep diodes (глубокие диоды) ?

T. R. Anthony & H. E. Cline Deep diodes (глубокие диоды)

Benjamin Morillon with coworkers Isolation walls for power devices

• • • Gershanov V. Yu. , Garmashov S. I. , Minyaev A. R. , Nosuleva I. Yu. , Ivanov N. E. Thermomigration as a method of fabrication of three-dimensional semiconductor devices //Final Program & Abstracts of International Conference "Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices", May 28 -June 2, 2000. -Venice-Jesolo Lido (Italy), 2000. -P. 54. Гершанов В. Ю. , Гармашов С. И. , Белецкая А. В. , Миняев А. Р. Эффект переключения потоков компонентов жидкой фазы асимметричными колебаниями температуры// Кристаллография. -2000. Т. 45, N 3. -С. 568 -572. Gershanov V. Yu. , Garmashov S. I. , Beletskaya A. V. , and Minyaev A. R. Alternation of the Flows of Liquid Components under Asymmetric Temperature Oscillations//Crystallography Reports. -2000. -Vol. 45, N 3. P. 519 -523. Гершанов В. Ю. , Гармашов С. И. , Носулева И. Ю. Миграция жидких включений в твердом теле под воздействием асимметричных колебаний температуры //Кристаллография. -2000. -Т. 45, N 2. -С. 357363. Gershanov V. Yu. , Garmashov S. I. , and Nosuleva I. Yu. Migration of Liquid Inclusions in a Solid under Asymmetric Temperature Oscillations //Crystallography Reports. -2000. -Vol. 45, N 2. -P. 323 -328 Gershanov V. Yu. , Garmashov S. I. , Minyaev A. R. , Ivanov N. E. , Nosuleva I. Yu. The capillarity influence on shape of small liquid inclusions enclosed in a solid under non-stationary thermal conditions// Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures: Mater. Res. Soc. Proc. USA, 2000. -Vol. 648. Garmashov, S. I. Velocity and cross-section shape of liquid cylindrical inclusions migrating normally to close-packed planes of a non-uniformly heated crystal under stationary thermal conditions / S. I. Garmashov , V. Yu. Gershanov // J. Cryst. Growth. - 2009. - V. 311, N. 2. - P. 413– 419. Gershanov, V. Yu. Non-stationary nonlinear effects at mass transfer in small volumes of solution in melt enclosed in anisotropic crystal/ V. Yu. Gershanov, S. I. Garmashov // J. Cryst. Growth. - 2009. - V. 311, N. 9. - P. 2722 -2730. (doi: 10. 1016/j. jcrysgro. 2009. 01. 080) V. Yu. Gershanov, S. I. Garmashov, 2015, Inverse Gibbs–Thomson Effect Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 85, No. 1, pp. 61– 65. V. Yu. Gershanov, S. I. Garmashov, Facet Effect Manifestation during Crystallization from Small Volumes of Solution in Melt // Pis’ma v Zhurnal Tekhnicheskoі Fiziki, 2011, Vol. 37, No. 13, pp. 97– 102. Гершанов, В. Ю. Нелинейные нестационарные эффекты в процессах массопереноса / В. Ю. Гершанов, С. И. Гармашов // Ростов-на-Дону: Издательство ЮФУ. - 2014