WEEKLY REPORT2018 08 22 HARISHA C P RESEARCH
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WEEKLY REPORT(2018 -08 -22) HARISHA C P RESEARCH INTERN SMART SEMICONDUCTOR DEVICES LABORATORY NATIONAL TAIWAN UNIVERSITY harishacpmech@gmail. com 0928 -314 -600 1
INTERNATIONAL RESEARCH ASPECTS USING ALD The major manufacturers: ØAdeka Corporation ØAixtron SE ØApplied Materials, Inc. ØASM International NV ØLam Research Corporation ØTokyo Electron Limited ØDenton Vacuum ØKurt J. Lesker Company ØBeneq Oy ØVeeco Instruments
INTERNATIONAL RESEARCH ASPECTS USING ALD’s are primarily split into : q Metal ALD q Aluminum Oxide ALD q Plasma Enhanced ALD q Catalytic ALD q Others 3
INTERNATIONAL RESEARCH ASPECTS USING ALD Major applications/end users : v Semiconductors v Solar Devices v Electronics v Medical equipment v Others 4
INTERNATIONAL RESEARCH ASPECTS USING ALD 5
Advantages of thermal Atomic Layer Deposition Compared to conventional PVD or (plasma) CVD processes, Atomic Layer Deposition has a number of advantages: q Atomic Layer Deposition (ALD) is a modified version of chemical vapor deposition (CVD). q This process is characterized by two successive, self-limiting surface reactions which permit ultra-thin, pinhole-free and extremely homogeneous coatings to be deposited. q Compliant coatings of complex surface geometries q Fewer defects in the films q No damage caused by plasma q Very high homogeneity of film properties 6
Applications of Atomic Layer Deposition q Development of transparent conductive oxide layers (TCOs) q Coating of LEDs q Diffusion barriers on technical textiles q Optical functional films q Coating of HIT solar cells q ALD was conventionally applied mainly in semiconductor electronic industry and recently it is receiving increasing attention for wider applications in energy, environment and sustainability research. 7
Information required on ALD system q In situ thin film growth monitoring and control (Ellipsometry) q What is the uniformity tolerance ( Less than 1 Aº uniformity is desirable) q What is the maximum size of the substrate that can be accomadated? ? q What is the base pressure and type of pump being used? ? q Range of applications? ? q What is the ALD cycle time? ? q Availability of Precursor material? ? q Dose times (the time a surface is being exposed to a precursor) and purge times (the time left in between doses for the precursor to evacuate the chamber) 8
