Week 9 b OUTLINE The metaloxide fieldeffect transistor
Week 9 b OUTLINE The metal-oxide field-effect transistor (MOSFET) Structure and operation of the MOSFET as a 3 -terminal device pn diodes isolate transistors in an IC MOSFET current-voltage characteristics The MOSFET as a controlled resistance MOSFET as an amplifier or electronically controlled switch EE 42/100, Spring 2006 Week 9 b, Prof. White 1
Modern Field Effect Transistor (FET) • An electric field is applied normal to the surface of the semiconductor (by applying a voltage to an overlying “gate” electrode), to modulate the conductance of the semiconductor ® Modulate drift current flowing between 2 contacts (“source” and “drain”) by varying the voltage on the “gate” electrode N-channel metal-oxidesemiconductor field-effect transistor (NMOSFET) EE 42/100, Spring 2006 Week 9 b, Prof. White 2
MOSFET • NMOS: N-channel Metal Oxide Semiconductor • L = channel length W • W = channel width GATE L lator “Metal” (heavily doped poly-Si) su oxide in n con ili p-type s n DRAIN SOURCE • A GATE electrode is placed above (electrically insulated from) the silicon surface, and is used to control the resistance between the SOURCE and DRAIN regions EE 42/100, Spring 2006 Week 9 b, Prof. White 3
N-channel MOSFET Gate Source IS n IG gate oxide insulator Drain ID n p • Without a gate-to-source voltage applied, no current can flow between the source and drain regions. • Above a certain gate-to-source voltage (threshold voltage VT), a conducting layer of mobile electrons is formed at the Si surface beneath the oxide. These electrons can carry current between the source and drain. EE 42/100, Spring 2006 Week 9 b, Prof. White 4
N-channel vs. P-channel MOSFETs NMOS PMOS n+ poly-Si p+ poly-Si n+ n+ p+ p-type Si p+ n-type Si • For current to flow, VGS > VT • For current to flow, VGS < VT • Enhancement mode: VT > 0 • Enhancement mode: VT < 0 • Depletion mode: VT > 0 – Transistor is ON when VG=0 V (“n+” denotes very heavily doped n-type material; “p+” denotes very heavily doped EE 42/100, Spring 2006 Week 9 b, Prof. White 5
Why are pn Junctions Important for ICs? • The basic building block in digital ICs is the MOS (metal-oxide-semiconductor) transistor, which contains reverse-biased diodes. – pn junctions are important for electrical isolation of transistors located next to each other at the surface of a silicon wafer. – The junction capacitance of these diodes can limit the performance (operating speed) of digital circuits EE 42/100, Spring 2006 Week 9 b, Prof. White 6
Device Isolation using pn Junctions regions of n-type Si a b n n n p-type Si No current flows if voltages are applied between n-type regions, because two pn junctions are “back-to-back” n-region a b n-region p-region => n-type regions isolated in p-type substrate and vice versa EE 42/100, Spring 2006 Week 9 b, Prof. White 7
Transistor A Transistor B n n p-type Si We can build large circuits consisting of many transistors without worrying about current flow between devices. The p-n junctions isolate the transistors because there is always at least one reverse-biased p-n junction in every potential current path. EE 42/100, Spring 2006 Week 9 b, Prof. White 8
MOSFET Circuit Symbols G NMOS G n+ poly-Si n+ n+ S S p-type Si PMOS Body G G p+ poly-Si p+ p+ S S n-type Si EE 42/100, Spring 2006 Body Week 9 b, Prof. White 9
Water Model for P-channel MOSFET EE 42/100, Spring 2006 Week 9 b, Prof. White 10
MOSFET Terminals • The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. – For an n-channel MOSFET, the SOURCE is biased at a lower potential (often 0 V) than the DRAIN (Electrons flow from SOURCE to DRAIN when VG > VT) – For a p-channel MOSFET, the SOURCE is biased at a higher potential (often the supply voltage VDD) than the DRAIN (Holes flow from SOURCE to DRAIN when VG < VT ) • The BODY terminal is usually connected to a fixed potential. – For an n-channel MOSFET, the BODY is connected to 0 V – For a p-channel MOSFET, the BODY is connected to VDD EE 42/100, Spring 2006 Week 9 b, Prof. White 11
NMOSFET IG vs. VGS Characteristic Consider the current IG (flowing into G) versus VGS : IG G S oxide semiconductor VGS + IG D VDS + The gate is insulated from the semiconductor, so there is no significant steady gate current. always zero! VGS EE 42/100, Spring 2006 Week 9 b, Prof. White 12
NMOSFET ID vs. VDS Characteristics Next consider ID (flowing into D) versus VDS, as VGS is varied: G S VGS + VGS > VT zero if VGS < VT VDS EE 42/100, Spring 2006 D oxide semiconductor ID ID VDS + Above threshold (VGS > VT): “inversion layer” of electrons appears, so conduction between S and D is possible Below “threshold” (VGS < VT): no charge no conduction Week 9 b, Prof. White 13
The MOSFET as a Controlled Resistor • The MOSFET behaves as a resistor when VDS is low: – Drain current ID increases linearly with VDS – Resistance RDS between SOURCE & DRAIN depends on VGS • RDS is lowered as VGS increases above VT oxide thickness tox NMOSFET Example: ID VGS = 2 V VGS = 1 V > VT VDS IDS = 0 if VGS < VT EE 42/100, Spring 2006 Inversion charge density Qi(x) = -Cox[VGS-VT-V(x)] where Cox eox / tox Week 9 b, Prof. White 14
MOSFET as a Controlled Resistor (cont’d) average value of V(x) We can make RDS low by • applying a large “gate drive” (VGS VT) • making W large and/or L small EE 42/100, Spring 2006 Week 9 b, Prof. White 15
ID vs. VDS Characteristics The MOSFET ID-VDS curve consists of two regions: 1) Resistive or “Triode” Region: 0 < VDS < VGS VT 2) process transconductance parameter Region: Saturation VDS > VGS VT EE 42/100, Spring 2006 “CUTOFF” region: VG < VT Week 9 b, Prof. White 16
MOSFET regions of operation Cutoff: VGS </= VT ID = 0 correction Resistive: ID ~ (VGS – VT)VDS Saturation: ID ~ (VGS – VT)2 EE 42/100, Spring 2006 Week 9 b, Prof. White 17
MOSFET Uses A MOSFET can be used as A linear amplifier: Input voltage applied between gate and source; output voltage appears between source and drain or An electronic switch: Switches between no current conduction between source and drain, and heavy conduction between source and drain as voltage applied between gate and source changes from low to high for NMOSFET EE 42/100, Spring 2006 Week 9 b, Prof. White 18
Common-Source (CS) Amplifier • The input voltage vs causes v. GS to vary with time, which in turn causes i. D to vary. • The changing voltage drop across RD causes an amplified (and inverted) version of the input signal to appear at the drain terminal. VDD RD i. D VBIAS vs + – EE 42/100, Spring 2006 D + + S + v. OUT = v. DS v. IN = v. GS Week 9 b, Prof. White 19
Load-Line Analysis of CS Amplifier • The operating point of the circuit can be determined by finding the intersection of the appropriate MOSFET i. D vs. v. DS characteristic and the load line: i. D (m. A) load-line equation: v. GS (V) EE 42/100, Spring 2006 v (V) DS Week 9 b, Prof. White 20
Voltage Transfer Function v. OUT v. IN Goal: Operate the amplifier in the high-gain region, so that small changes in v. IN result in large changes in v. OUT (1): transistor biased in cutoff region (2): v. IN > VT ; transistor biased in saturation region (3): transistor biased in saturation region (4): transistor biased in “resistive” or “triode” region EE 42/100, Spring 2006 Week 9 b, Prof. White 21
Notation • Subscript convention: § VDS VD – VS , VGS VG – VS , etc. • Double-subscripts denote DC sources: § VDD , VCC , ISS , etc. • To distinguish between DC and incremental components of an electrical quantity, the following convention is used: – DC quantity: upper-case letter with upper-case subscript § ID , VDS , etc. – Incremental quantity: lower-case letter with lower-case subscript § id , vds , etc. – Total (DC + incremental) quantity: lower-case letter with upper-case subscript § i. D , v. DS , etc. EE 42/100, Spring 2006 Week 9 b, Prof. White 22
Quiescent Operating Point • The operating point of the amplifier for zero input signal (vs = 0) is often referred to as the quiescent operating point. (Another word: bias. ) – The bias point should be chosen so that the output voltage is approximately centered between VDD and 0 V. – vs varies the input voltage around the input bias point. Note: The relationship between v. OUT and v. IN is not linear; this can result in a distorted output voltage signal. If the input signal amplitude is very small, however, we can have amplification with negligible distortion. EE 42/100, Spring 2006 Week 9 b, Prof. White 23
Dynamic Random-Access Memory (DRAM) with NMOSFET switch and capacitor Bit Line Row Address Decoder W ord Line Column Drivers and Sense Amplifiers Column Address Decoder/Selector Figure 0. 1 EE 42/100, Spring 2006 Example of a densely populated integrated circuit – the DRAM Week 9 b, Prof. White 24
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