Version A0 Green LED Chip SLNGIT 0350 VWI

Version: A/0 Green LED Chip SL-NGIT 0350 -[V#W#I#] ■ MOVPE epi-wafer of In. Ga. N alloy films ■ Normal type chip (non-flip-chip) ※ All samples are 100% tested and sorted, and user can consult about special specifications. ▣ ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ℃ ) Item Symbol Maximum Rating Unit DC Forward Current IF 30 m. A Pulse Forward Current IFP 100 m. A Reverse Voltage VR 5 V Operating Temperature Topr -30 to +85 ℃ Storage Temperature Tstg -40 to +100 ℃ VESDS 2000 V ESD sensitivity (HBM) * *ESD testing result is based on statistic measurements. Seller does not give assurance for every chip. ▣ OPTICAL AND ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ ) Item Forward Voltage Reverse Current Symbol VF IF=20 m. A IR VR=5 V D Wavelength Condition IF=20 m. A V 1 V 2 W 1 W 2 W 3 W 4 … Luminous Intensity IV IF=20 m. A W 8 I 1 … I 7 I 8 I 9 I 10 I 11 … I 13 ▣ CHIP DESCRIPTION Typ 3. 2 3. 5 Max 3. 4 3. 6 Unit - - 1 m. A 515 517. 5 520 522. 5 … 532. 5 160 … 280 300 320 340 360 … 400 … 170 … 290 310 330 350 370 … 410 517. 5 520 522. 5 525 … 535 180 … 300 320 340 360 380 … 420 90 mm 350 mm p V nm mcd ▣ MECHANICAL SPECIFICATION Description 20 mm 100 mm 145 mm Min 3. 0 3. 4 n 100 mm Hangzhou Silan Azure Co. , Ltd. www. Silan. Azure. com / www. Silan. LED. com Dimension Emission Area 300㎛ x 300㎛ Bottom Area 350㎛ x 350㎛ ( 10㎛) Chip Thickness 83㎛ ( 5㎛) N-pad Φ=100㎛ P-pad Φ=100㎛ Electrodes Spacing 20㎛ Electrode material Au Silan Azure