Van Der Pauw d 500000nm I100 u A

  • Slides: 20
Download presentation
半導體專題實驗 實驗二 Van Der Pauw量測與霍爾效應 d= 500000(nm) I=100 u. A T=300 K B=5000 Gauss

半導體專題實驗 實驗二 Van Der Pauw量測與霍爾效應 d= 500000(nm) I=100 u. A T=300 K B=5000 Gauss

實驗目的 o 利用 Van Der Pauw 四點探針法和霍爾效應 (Hall effect),量測半導體中多數載子濃度與 遷移率μ (mobility) 。 The Van

實驗目的 o 利用 Van Der Pauw 四點探針法和霍爾效應 (Hall effect),量測半導體中多數載子濃度與 遷移率μ (mobility) 。 The Van Der Pauw Method Original paper by L. J. van der Pauw in 1958 http: //electron. mit. edu/~gsteele/vanderpauw. pdf

霍爾效應 (Hall Effect) For p-type: Remember, Hall effect is used to measure majority carrier

霍爾效應 (Hall Effect) For p-type: Remember, Hall effect is used to measure majority carrier density. For minority carrier density, we use Haynes-Shockley experiment.

霍爾效應 (Hall Effect) 由Lorentz force balance: 得到 (positive for ptype) 又 其中 故 稱

霍爾效應 (Hall Effect) 由Lorentz force balance: 得到 (positive for ptype) 又 其中 故 稱 Hall coefficient (positive for ptype) (d為導體厚度) : Hall voltage : Hall field : Hall coefficient

霍爾效應 (Hall Effect) For n-type: 同理可得 (for n-type) (negative for ntype)

霍爾效應 (Hall Effect) For n-type: 同理可得 (for n-type) (negative for ntype)

vs. Original quote:

vs. Original quote: