Ultrawide bandgap semiconductor Ga 2 O 3 for

Ultra-wide bandgap semiconductor β-Ga 2 O 3 for power electronics applications Hong Zhou, Jinhyun Noh, and Peide D. Ye Motivation Depletion/Enhancement-mode GOOI FET Thickness Dependent VT • β-Ga 2 O 3 has an ultra-wide bandgap of 4. 8 e. V, high electrical field (Ebr) of 8 MV/cm, high electron mobility of 300 cm 2/Vs, and high Bliga’s FOM of 3444, showing its great promise to replace Ga. N and Si. C as next generation power device semiconductor. • β-Ga 2 O 3 on insulator field-effect transistors (GOOI FETs) is a good approach to increase BV and reduce self-heating effect by incorporating a wider bandgap and higher thermal conductivity substrate. Device Schematics and Ohmic Contact Optimization VT is shifted from negative to positive when thickness is reduced. BV Measurement and Simulation Device schematic of GOOI FET with β-Ga 2 O 3 nano-membrane surface roughness of 0. 3 nm. Record high ID of 1. 5/1. 0 A/mm for D/E-modes GOOI FETs. High on/off ratio of 1010 and low SS of 150~160 m. V/dec are demonstrated. Performance Benchmark of GOOI FET High BV=185 V is achieved for a short LSD=0. 9 μm device and an average E=2 MV/cm is demonstrated. Conclusions 1. D/E-modes GOOI FETs have demonstrated the highest IDMAX of 1. 5/1 A/mm, which are 1~2 orders higher than other β-Ga 2 O 3 FETs. 2. E-mode GOOI FETs can be achieved by simply shrinking β-Ga 2 O 3 thickness and an average Ebr =2 MV/cm is demonstrated. Acknowledgement The authors would like to thank the technical help from AFRL. 30 s Ar plasma treated contact turns out to be with lowest Rc. Ar plasma untreated or over treated contacts lead to Schottky-behavior contact. References D/E-mode GOOI FETs present 1~2 order higher IDMAX. 1. W. S. Hwang, et al. , Appl. Phys. Lett. , vol. 104, 203111 -1 -203111 -5, 2014. 2. H. Zhou et al. , IEEE EDL, vol. 38, 103 -106, 2017. NEEDS Annual Review: May 8 -9, 2017