Trend charts LPCVD with Etch Rates Centre for

Trend charts: LPCVD with Etch Rates Centre for Nano Science and Engineering

Silicon Nitride 2 Process Details: Temperature: 7500 C Pressure: 300 m. T Gases: DCS- 10 sccm, NH 370 sccm Upper Limit 1. 8 Lower Limit 1. 6 Dep. Rate 1. 4 Target(1. 66) d-MMM-yy d-MMM-yy d-MMM-yy Date Silicon Nitride 2. 2 2. 1 Upper Limit 2 Lower Limit 1. 9 Target(1. 98) 1. 8 Average Date d-MMM-yy d-MMM-yy d-MMM-yy 1. 7 d-MMM-yy Refractive index d-MMM-yy 1. 2 d-MMM-yy Dep rate(nm/min) LPCVD Silicon Nitride 2

Poly. Silicon 9. 5 9 8. 5 8 7. 5 7 6. 5 6 Upper Limit Lower Limit Dep. Rate Process Details: Temperature: 6200 C Pressure: 200 m. T Gases: Si. H 4 - 40 sccm 02 -Aug-18 19 -Jul-18 22 -Jun-18 11 -Apr-18 25 -May-18 Target(8) 22 -Mar-18 Date Poly. Silicon (RI) 4. 3 4. 2 4. 1 4 3. 9 3. 8 3. 7 3. 6 3. 5 Upper Limit Lower Limit Average d-MMM-yy Date d-MMM-yy Target(3. 95) d-MMM-yy Refractive Index Dep rate(nm/min) Poly. Silicon 3

Etch rate: Silicon nitride and Polysilicon 7 6. 5 6 5. 5 5 4 3. 5 Upper Limit Lower Limit Etchant Details: Etchants: Orthophospheric Acid bath. Temperature: 1550 C Target(5. 5) d-MMM-yy Date d-MMM-yy Poly. Si etch rate 64 Upper Limit 60 56 Lower Limit 52 Target 48 44 Etch. Rate Date d-MMM-yy d-MMM-yy 40 d-MMM-yy Etchant Details: Etchants: Acetic acid, Nitric acid and HF Ratio: 33: 26: 1 Etch Rate(nm/min) d-MMM-yy Etch. Rate d-MMM-yy Etch Rate(nm/min) Silicon Nitride 4