Thermal oxidation of Si and oxide thickness measurement

熱成長氧化層的機制與模型(II) No Ni o Model: n Ficker’s Law: J=D(No-Ni)/Xo Si. O 2 n Reaction

B=C 1*exp(-E 1/k. T) B/A=C 2*exp(-E 2/k. T) Dry C 1 =7. 72 x

Deal－Grove Model X 2＋A*X＝B*（t＋τ）當t很短時，X很薄，X 2＜＜A*X，上式趨近為 A*X＝B*（t＋τ）/A 此時稱為linear growth regime 或linear rate regime

Deal－Grove Model X 2＋A*X＝B*（t＋τ）當t很長時，X變厚，X 2＞＞A*X，上式趨近為 X 2＝B*（t＋τ）此時稱為diffusion-limited regime 或parabolic rate regime B稱為Parabolic

結報問題 1. Find and compare the oxide thickness from the following methods 1. Table

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半導體專題實驗實驗四氧化層之成長與厚度量測 Thermal oxidation of Si and oxide thickness measurement 1

Oxidation in Semiconductor A Typical MOS Profile Screen Oxide, Pad Oxide, Barrier Oxide 3

Color chart of Si. O 2: 8

熱成長氧化層的機制與模型(II) No Ni o Model: n Ficker’s Law: J=D(No-Ni)/Xo Si. O 2 n Reaction rate: J=Ks*Ni Si J=D*No/(D/Ks+Xo) n d. Xo/dt = J/M =(D*No/M) / (Xo+D/Ns) Xo(t)=A/2 ((1+ ( 4 B/A 2 ) *(t+ ) )0. 5 -1) o A=2 D/Ks , B=2 D*No/M o = Xi 2/B + A*Xi/ B n n Xi為一開始氧化層的厚度 X 0可以看成 Xo(t)=B/A (1+ ) 當經過一段長時間後, Xo(t)=(Bt) 1/2 10

DRY & WET 13

B=C 1*exp(-E 1/k. T) B/A=C 2*exp(-E 2/k. T) Dry C 1 =7. 72 x 102 mm 2 hr-1 E 1 =1. 23 e. V C 2 =6. 23 x 106 mmhr-1 E 2 =2 e. V Wet C 1 =2. 14 x 102 mm 2 hr-1 E 1 =0. 71 e. V C 2 =8. 95 x 107 mmhr-1 E 2 =2. 05 e. V 14

Deal－Grove Model X 2＋A*X＝B*（t＋τ）當t很短時，X很薄，X 2＜＜A*X，上式趨近為 A*X＝B*（t＋τ）/A 此時稱為linear growth regime 或linear rate regime B/A稱為Linear rate Constant，受控於K（反應速率） 16

Deal－Grove Model X 2＋A*X＝B*（t＋τ）當t很長時，X變厚，X 2＞＞A*X，上式趨近為 X 2＝B*（t＋τ）此時稱為diffusion-limited regime 或parabolic rate regime B稱為Parabolic rate Constant，受控於D （oxidant在Si. O 2內之擴散速率） 17

橢圓儀(ellipsometer) 24

結報問題 1. Find and compare the oxide thickness from the following methods 1. Table 2. Deal-Grove Model 3. Color chart (optical) 4. Ellipsometer (optical) 5. C-V (electrical) 2. Find Qox 34