The CMOS inverter Paulo Moreira Inverter 1 The

  • Slides: 10
Download presentation
The CMOS inverter Paulo Moreira Inverter 1

The CMOS inverter Paulo Moreira Inverter 1

The CMOS inverter Paulo Moreira Inverter 2

The CMOS inverter Paulo Moreira Inverter 2

The CMOS inverter Regions of operation (balanced inverter): Vin n-MOS p-MOS Vout 0 cut-off

The CMOS inverter Regions of operation (balanced inverter): Vin n-MOS p-MOS Vout 0 cut-off linear Vdd VTN<Vin<Vdd/2 saturation linear ~Vdd Vdd/2 saturation Vdd/2 Vdd-|VTP|>Vin>Vdd/2 linear saturation ~0 Vdd linear cut-off 0

The CMOS inverter CL=250 f. F Paulo Moreira Inverter 4

The CMOS inverter CL=250 f. F Paulo Moreira Inverter 4

The CMOS inverter Propagation delay Main origin: load capacitance To reduce the delay: Reduce

The CMOS inverter Propagation delay Main origin: load capacitance To reduce the delay: Reduce CL Increase kn and kp. That is, increase W/L

The CMOS inverter • CMOS power budget: – Dynamic power consumption: • Charging and

The CMOS inverter • CMOS power budget: – Dynamic power consumption: • Charging and discharging of capacitors – Short circuit currents: • Short circuit path between power rails during switching – Leakage • Leaking diodes and transistors Paulo Moreira Inverter 6

The CMOS inverter • The dynamic power dissipation is a function of: – Frequency

The CMOS inverter • The dynamic power dissipation is a function of: – Frequency – Capacitive loading – Voltage swing • To reduce dynamic power dissipation – Reduce: CL – Reduce: f – Reduce: Vdd The most effective action Paulo Moreira Inverter 7

The CMOS inverter

The CMOS inverter

The CMOS inverter n-well contact (n+) n-well substrate contact (p+) polysilicon p+ diffusions polysilicon

The CMOS inverter n-well contact (n+) n-well substrate contact (p+) polysilicon p+ diffusions polysilicon contacts diffusion contacts n+ diffusions

Why The CMOS inverter is Better? ? • 1) Low DC Power Consumption •

Why The CMOS inverter is Better? ? • 1) Low DC Power Consumption • 2) Abrupt & well defined Voltage transfer Characteristic • 3) Noise Immunity due to Low impedance between logic levels and Supply/Gnd. • Symmetry between Tfall &Trise. • High Density: Si real estate=>Yield=>Cost! • Highly Integrated=>Active & High input Impedance=> Composition equality. • No real trade off between 1, 2, 3, 4, 5 & 6