Temperature dependence of sensor leakage current Junkichi Asai
![Introduction • Silicon breaks by Radiation damage: Increase dark current increases damage constant [A/cm]](https://slidetodoc.com/presentation_image_h/0cccecf64a73776243075da28c5305c5/image-2.jpg "Introduction • Silicon breaks by Radiation damage: Increase dark current increases damage constant [A/cm]")
![Leakage current [A] Result (temperature dependence) Bias Voltage [V] Humidity : 30%](https://slidetodoc.com/presentation_image_h/0cccecf64a73776243075da28c5305c5/image-6.jpg "Leakage current [A] Result (temperature dependence) Bias Voltage [V] Humidity : 30%")
![Result (temperature dependence) Leakage current [A] Bias Voltage 100 V constant -10 -5 Test](https://slidetodoc.com/presentation_image_h/0cccecf64a73776243075da28c5305c5/image-7.jpg "Result (temperature dependence) Leakage current [A] Bias Voltage 100 V constant -10 -5 Test")
![Leakage current [A] Result (humidity dependence) [A ] Bias Voltage [V]](https://slidetodoc.com/presentation_image_h/0cccecf64a73776243075da28c5305c5/image-8.jpg "Leakage current [A] Result (humidity dependence) [A ] Bias Voltage [V]")
- Slides: 9
Temperature dependence of sensor leakage current Junkichi Asai (RIKEN BNL Research Center) (Hiroki kanoh (Tokyo Institute of Technology)) VTX Meeting 6/1/2004 Contents • Introduction • Measurement • Result • Summary
Introduction • Silicon breaks by Radiation damage: Increase dark current increases damage constant [A/cm] sensor Volume [cm 3] radiation flux [/cm 2] • Main part of dark current is leakage current depending on temperature: Temperature sensor constant Energy gap =1. 2 boltzmann constant
Setup • Silicon strip sensor : 1 st prototype detector (2002 Nov : Test beam at KEK) Thickness: 400 um Back Front Channel: 384 x 384 (sum : 768 strips) Currents Voltage Sensor Ammeter Voltage
• device : Setup Source(Keithley Instruments) • Model 6487 Picoammeter/Voltage : as high as 500 V Currents : as low as 20 f. A • DAQ controlled by Lab. VIEW 7 (programming by H. Kanoh) PC : Windows Connect : PCI-GPIB • Temperature and Humidity controlled chamber(ESPEC LHU-113) s (%RH : 0 to 95%) Back PC V ol ta ge Cu rre nt Front Se ns or T: -20 to 85 o. C Chamber Sensor Box Ammeter Voltage Chamber PC
Measuring condition • Sensor : In the chamber dark room keeping over 1 day (for light sensitive) • IV measurement : bulk=768 strips (not channel by channel) Bias Voltage : 0 ~ 500 V Current : max 2 m. A Temperature : -10 ~ 30 o. C Humidity : 15% , 30%
Leakage current [A] Result (temperature dependence) Bias Voltage [V] Humidity : 30%
Result (temperature dependence) Leakage current [A] Bias Voltage 100 V constant -10 -5 Test beam @KEK : 80~90 V 0 5 10 15 Temperature @100 V T[o. C ] I[u. A ] 30 70 25 51 20 32 15 20 10 15 [k] 20 5 2510 30 [o. C] 0 8 Humidity : 30% 9 -5 -10 9
Leakage current [A] Result (humidity dependence) [A ] Bias Voltage [V]
Summary • RIKEN facility activity • Study temperature dependence of silicon leakage current • Silicon strip sensor : 1 st prototype detector thickness 400 um, 768 strips • Measurement : Bias Voltage 0~500 [V] temperature -10~30 [o. C] Humidity 15, 30 [%] • Best operating temperature : 10 o. C, 15 u. A@100 V
