Tecport Ebeam Evaporator Process parameters List of materials
Tecport E-beam Evaporator Process parameters. List of materials which have been evaporated: METALS: 1. 2. 3. 4. 5. 6. Aluminium. Chromium. Gold. Titanium. Hafnium. Nickel. OXIDES: 1. Aluminium Oxide. 2. Silicon Dioxide. 3. Titanium Oxide. 4. Indium – Tin Oxide.
Aluminium (Al) Process parameter: Base pressure: 2. 1 E-6 Torr. Deposition pressure: 2. 3 E-6 Torr. Rate of deposition: Measured thickness (Dektak): Annealing: 5 Å/s. 292. 32 nm. Annealed at 450°C, with forming gas. Sheet Resistance before annealing: 0. 124 Ω/□. Sheet Resistance after annealing: 0. 121 Ω/□. Resistivity: 0. 035 µΩ m.
Al - XRD Data:
Chromium (Cr) Process parameter: Base pressure: 3. 0 E-6 Torr. Deposition pressure: 2. 2 E-6 Torr. Rate of deposition: 1 Å/s. Measured thickness (Dektak): 52. 26 nm. Sheet Resistance. 117 Ω/□. Resistivity: 52. 26 E-9 X 117 = 6. 1 µΩ m.
Cr - XRD Data:
Gold (Au) Process parameter: Base pressure: 4. 2 E-6 Torr. Deposition pressure: 8. 89 E-6 Torr. Rate of deposition: Measured thickness (Dektak): Sheet Resistance: Resistivity: 1 Å/s. 187. 535 nm. 0. 258 Ω/□. 187. 535 E-9 X 0. 258 = 0. 048 µΩ m.
Au - XRD Data:
Titanium (Ti) Process parameter: Base pressure: 2. 0 E-6 Torr. Deposition pressure: 2. 17 E-6 Torr. Rate of deposition: 4 Å/s. Measured thickness (Dektak): 60 nm. Sheet Resistance: Resistivity: 17. 5 Ω/□. 17. 5 X 60 E-9= 1. 05 µΩ m.
Ti - XRD Data:
Ti - XPS Data: From XPS data shows that the atomic concentration of O 2 is more on the surface and with depth it is decreasing and the atomic concentration of Ti is increasing with depth.
Hafnium (Hf) Process parameter: Base pressure: 3. 26 E-6 Torr. Deposition pressure: 1. 9 E-6 Torr. Rate of deposition: 3 Å/s. Measured thickness (Dektak): 18. 23 nm. Sheet Resistance: 145. 5 Ω/□. Resistivity: 145. 5 X 18. 23 E-9= 2. 65 µΩ m.
Hf - XRD Data:
Nickel (Ni) Process parameter: Base pressure: Deposition pressure: Rate of deposition: Measured thickness (Dektak): Annealing: 3. 2 E-6 Torr. 8 E-6 Torr. 1 Å/s. 65. 3 nm. Annealed at 450°C. Sheet Resistance before annealing: 5. 09 Ω/□. Sheet Resistance after annealing: 5. 75 Ω/□. Resistivity after annealing: 37. 5 E-8 Ω m.
Ni - XRD Data (Before annealing):
Ni - XRD Data (After annealing):
Aluminium Oxide (Al 203): Process parameter: Base pressure: 4 E-6 Torr. Deposition pressure: 8. 71 E-6 Torr. Rate of deposition: 1 Å/s. Measured thickness (Dektak): 150. 5 nm. Measured thickness (Ellipsometer): ANALYSIS: 133 nm.
Aluminium Oxide (Al 203) with O 2: Process parameter: Base pressure: Deposition pressure: Rate of deposition: Flow rate (O 2): 3 E-6 Torr. 4. 86 E-5 Torr. 1 Å/s. 1 sccm (O 2 started 1 min before deposition). Measured thickness (Dektak): 150 nm. Measured thickness (Ellipsometer): 144 nm.
ANALYSIS:
Silicon Dioxide (Si. O 2): Process parameter: Base pressure: 2 E-6 Torr. Deposition pressure: 6 E-6 Torr. Rate of deposition: Measured thickness (Dektak): 1 Å/s. 134 nm. Silicon Dioxide (Si. O 2) with O 2: Process parameter: Base pressure: 2 E-6 Torr. Deposition pressure: 4 E-5 Torr. Rate of deposition: Measured thickness (Dektak): 1 Å/s. 150 nm.
ANALYSIS: Si. O 2 Vs. Si. O 2 with O 2
Titanium Oxide (Ti. O 2): Process parameter: Base pressure: Deposition pressure: Rate of deposition: 4. 8 E-6 Torr. 4 E-5 Torr. 1 Å/s. Flow rate (O 2): 1 sccm. Measured thickness (Ellipsometer): 77. 6 nm
wavelength Vs. refractive index and extinction coefficient: ANALYSIS: Wavelength (nm) N K 631. 45 2. 057 1. 007 E-005 633. 03 2. 056 9. 813 E-006
- Slides: 23