svc Transformer A stepdown transformer is usually placed

svc

Transformer A step-down transformer is usually placed between the AC system bus-bar and the low voltage bus-bar to which the thyristor valves are connected. Once the SVC capacity is determined, the best way to design the valve is to use thyristor current capability at its maximum. Then the minimum necessary AC voltage is derived to obtain the given capacity. The AC voltage across the thyristor valve determines the number of thyristors in the valve and consequently the valve cost. The step-down transformer adjusts the AC voltage for the minimum system cost. The transformer increases the thyristor valve efficiency. TCR Reactor The TCR reactor generates inductive reactive power of the SVC. Air core reactors are most commonly applied. The inductance value of the reactors is custom designed for each system in order to satisfy the specified reactive power output. AC Filter Bank AC filter banks provide capacitive reactive power and absorb the harmonic currents generated by the TCR. The AC filter banks are carefully designed considering the harmonics environment in the AC system. Usually, oil filled capacitors with fuse and air core reactors are applied. Switchgear is necessary to connect or disconnect the SVC to or from the AC system. Toshiba is one of the major suppliers of both gas and air insulated switchgear.

Voltage Control 275 k. V, 230 MA SVC -80 MVA (inductive) to +150 MVA (capacitive) Australia (QLD) TCR + FC Power Oscillation Damping 275 k. V, 300 MA SVC -140 MVA (inductive) to +160 MVA (capacitive) Australia (SA) TCR + TSC Over-voltage Suppression 400 k. V, 580 MA SVC -580 MVA 500 ms (inductive) TCR Australia Voltage Stabilization 500 k. V, 100 MA SVC -20 MVA (inductive) to +80 MVA (capacitive) Japan (Tokyo) TCR + FC STATCOM 500 k. V, 50 MA Japan (Nagoya) Mobile SVC -40 MVA (inductive) SVC Japan (Osaka)

E M S S C A D A S ( T O S C A N ) Based on vast experience in STATCOM using GTO devices, Toshiba has developed a more advanced P M semiconductor device, the Injection Enhanced Gate Transistor (IEGT). G o a G T a The IEGT has high power ratings comparable to the GTO and can be operated at high speed comparable to the w i a re sn Insulated Gate Bipolar Transistor (IGBT). sa r I n The IEGT is the voltage driven device and needs a small amount of power for triggering. The number of gate M Is n T e circuit parts and the size of snubber circuits are dramatically reduced in comparison with the GTO. The IEGT m rsn n sia u valve makes SVC more compact and cost-effective. . u sn lu ls a s( Features; i fta T to e Low losses by smaller snubber circuit o I e n rd C Low gate power by voltage driven MOS (Metal Oxide Semiconductor) gate d m & S Fast switching speed e H T rw o ir. D m a i t e s cn ) st h. r g & i e b a u r. R e t a i co tn o r