Summary of existing prototypes Ivan Peric Monolithic Detectors

Summary of existing prototypes Ivan Peric, Monolithic Detectors for Strip Region 1

Summary of existing prototypes • • • • AMS H 35 HVPixel monolithic test detector – continuous readout with time measurement (one system available, chips: todo) CCPD 1 capacitive coupled pixel detector – continuous readout wtm (one system available, chips: todo) CAPSENSE/CAPPIX edgeless capacitive coupled pixel detector – continuous readout wtm (one system available, chips: todo) HVPixel. M monolithic test detector - rolling shutter RO (one system available, chips: todo) AMS H 18 Mu. Pixel monolithic test detector – continuous readout with time measurement (one system available, chips: todo) HV 2 FEI 4 CCPD detector (several systems available, chips: todo) Ivan Peric, Monolithic Detectors for Strip Region 2

Summary of existing prototypes Monolithic detector – continuous readout with time measurement HVPixel – CMOS in-pixel electronics with hit detection Binary RO Pixel size 55 x 55μm Noise 60 e MIP seed pixel signal 1800 e Time resolution <100 ns Capacitive coupled hybrid detector CCPD 1 - capacitive coupled pixel detector Pixel size 55 x 55μm Noise 70 e Time resolution <100 ns MIP SNR 25 CCPD 2 (CAPPIX) - capacitive coupled pixel detector Pixel size 50 x 50μm Noise 30 -40 e Time resolution <300 ns MIP SNR 45 -60 Monolithic detector frame readout HVPixel. M chip - frame mode readout Pixel size 21 x 21μm 4 PMOS pixel electronics 128 on-chip ADCs Noise: 21 e (lab) - 44 e (test beam) MIP signal - cluster: 2000 e/seed: 1200 e Test beam: Detection efficiency >98% Seed Pixel SNR ~ 27 Cluster signal/seed pixel noise ~ 47 Spatial resolution ~ 3 m Irradiations of test pixels 60 MRad – MIP SNR 22 at 10 C (CCPD 1) 1015 neq MIP SNR 50 at 10 C (CCPD 2) Technology 350 nm HV – substrate 20 cm uniform Ivan Peric, Monolithic Detectors for Strip Region 3

HVPixel Monolithic matrix CCPD matrix (sensor) CCPD matrix (readout) Ivan Peric, Monolithic Detectors for Strip Region 4

CCPD 1 Monolithic matrix CCPD matrix (sensor) wire bonds Electrodes chips Chip A Sensor pixels Signal transmission CCPD matrix (readout) Standard CCPD 55 x 70 µm pixel size Ivan Peric, Monolithic Detectors for Strip Region Chip B Readout pixels 5

CCPD 1 Ivan Peric, Monolithic Detectors for Strip Region 6

Edgeless CCPD (CAPSENSE/CAPPIX) Pixel matrix efficiency: Detection of signals > 350 e possible MIP signal ~ 1800 e CAPPIX/CAPSENSE edgeless CCPD 50 x 50 µm pixel size Ivan Peric, Monolithic Detectors for Strip Region 7

HVPixel. M Efficiency vs. the in-pixel position of the fitted hit. Efficiency at TB: ~98% (probably due to a rolling shutter effect) Seed pixel SNR 27, seed signal 1200 e, cluster 2000 e The type 1 chip HVPixel. M: Simple (4 T) integrating pixels with pulsed reset and rolling shutter RO 21 x 21 µm pixel size Ivan Peric, Monolithic Detectors for Strip Region Spatial resolution 3 -3. 8µm

Irradiation with protons at KIT (1015 neq/cm 2 and 300 MRad) 55 Fe 22 Na and 22 Na spectrum, RMS noise Irradiated Temperature 10 C RMS Noise 77 e SNR = 64 55 Fe and 22 Na spectrum, RMS noise Irradiated Temperature 20 C RMS Noise 270 e SNR = 15 55 Fe and 22 Na spectrum, RMS noise Irradiated Temperature -10 C RMS Noise 40 e SNR = 93 Ivan Peric, Monolithic Detectors for Strip Region 9

Irradiation with x-rays (50 MRad) Noise Before irradiation Room Temperature Noise 72 e Noise After irradiation Temperature 5 C Noise 83 e Noise at room Temperature Vs. annealing time Ivan Peric, Monolithic Detectors for Strip Region 10

Mu. Pixel 92µm Ivan Peric, Monolithic Detectors for Strip Region 11

Mu. Pixel (RO-cell) 46 µm Comparator 7µm DAC and SRAM Coupling capacitor Ivan Peric, Monolithic Detectors for Strip Region Address ROM TS DRAM CMOS digital part 12

Mu. Pixel Threshold tune not optimal (changed in the new version) Ivan Peric, Monolithic Detectors for Strip Region 13

Mu. Pixel test beam • • Test-beam measurement February 2014 DESY Performed by our colleagues from Institute for Physics Ivan Peric, Monolithic Detectors for Strip Region 14

Mu. Pixel test beam • • Test-beam measurement October 2013 DESY Performed by our colleagues from Institute for Physics 80 ns Probably caused by indirect hits Ivan Peric, Monolithic Detectors for Strip Region 15

HV 2 FEI 4 • HV 2 FEI 4 CCPD Pixels 2 2 3 3 1 1 Ivan Peric, Monolithic Detectors for Strip Region 16

HV 2 FEI 4 • • • Standard pixels Pixel efficiency measurement For every pixel efficiency and number of noise hits are measured No noise hits observed About 99% pixels detect signals of ~1025 -1125 e. Ivan Peric, Monolithic Detectors for Strip Region 17

HV 2 FEI 4: segmented strip measurements • Analog encoding of pixels positions in the case of the segmented strip readout Fe 55 Absorber Th 1 Monitor Amp Oscilloscope Chip Ivan Peric, Monolithic Detectors for Strip Region 18

HV 2 FEI 4: neutron irradiation 1015 neq/cm 2 • No evidence of signal decrease after 1015 neq/cm 2 Ivan Peric, Monolithic Detectors for Strip Region 19

HV 2 FEI 4: x-ray irradiation to 862 Mrad • • CCPD 2 implements three pixel types, fully rad hard, partially rad hard and a simple pixel that uses positive feedback and has a CMOS comparator A detector has been irradiated to 862 Mrad with x-rays. (chips on during the irradiation, 2 hours of annealing at 70 C after each 100 Mrad) Result for one partially rad hard pixel: input referred noise before irradiation 25 m. V (90 e) Input referred noise after irradiation 40 m. V (150 e) at room temperature 90 e Ivan Peric, Monolithic Detectors for Strip Region 862 Mrad 150 e 20

HV 2 FEI 4: test beam • Test beam Threshold tune not optimal (changed in the new version) Ivan Peric, Monolithic Detectors for Strip Region 21