Submicron Probing Techniques Based on AFM Technology Presented
Submicron Probing Techniques Based on AFM Technology Presented By: Dr. Michael Harz & Dr. Thomas Thärigen Amsterdam, September 2002 4 th IWo. Ri. D
Content I. III. IV. V. VI. Introduction / Motivation Principle Set Up Performance Applications Conclusion Amsterdam, September 2002 4 th IWo. Ri. D 2
Introduction Motivation n n Visual location Probe placement Challenges n n Time to data Device damage Circuit charging Standard environment Amsterdam, September 2002 4 th IWo. Ri. D 3
Content I. Introduction / Motivation II. Principle III. IV. V. VI. Set Up Performance Applications Conclusion Amsterdam, September 2002 4 th IWo. Ri. D 4
Principle of AFM Probing n n Basic AFM principle for imaging Use of the AFM tip to make electrical contact Lens GOAL: Laser Mirror Detector y x DUT 3 D Piezo Actuator Measurement Unit Amsterdam, September 2002 4 th IWo. Ri. D Collect electrical data quickly for Failure Analysis and Design Verification 5
Probing Procedure n n n n Setup standard probe station Place sample on chuck Coarse positioning of AFM Probe. Head(s) Measurement equipment setup AFM navigational scan (38 µmx 38 µm) AFM positional scan (approx. 10 µm x 10 µm) Probe placement(s) Measurement Amsterdam, September 2002 4 th IWo. Ri. D 6
Content II. Introduction / Motivation Principle III. Set Up I. IV. V. VI. Performance Applications Conclusion Amsterdam, September 2002 4 th IWo. Ri. D 7
Complete Submicron Probing Setup § Probe. Head with AFM Technology § PC-based controller § Fits to all SUSS probe stations § Vibration isolation table required § § Up to 3 probes can be placed within 1 x 1µm area Easy to use software Amsterdam, September 2002 4 th IWo. Ri. D 8
AFP Probehead Amsterdam, September 2002 4 th IWo. Ri. D 9
Cartridge & Probe Tip Intelligent cartridges: n Application decides type n Frequencies up to 3 GHz n Active and passive probes n Amsterdam, September 2002 Equipped with EEPROM covering n Statistics (e. g. lifetime) n Type n Calibration data 4 th IWo. Ri. D 10
Content III. Introduction / Motivation Principle Set Up IV. Performance I. II. V. VI. Applications Conclusion Amsterdam, September 2002 4 th IWo. Ri. D 11
Performance: Imaging n n Placement accuracy: R=90 nm Image resolution: 50 nm Zoom function Damage free imaging using constant force scan 12 x 12 µm scan 38 x 38 µm scan Amsterdam, September 2002 4 th IWo. Ri. D 12
Performance: Contact Stability Test Procedure: Resistant Measurement 10 x 60 sec contact on aluminum metal wafer 1000 sec contact on aluminum metal wafer Amsterdam, September 2002 4 th IWo. Ri. D 13
Performance: RF Measurements “AP 3” performance Response Rise time 120 ps (3 Ghz) @ 10 MOhm input impedance Amsterdam, September 2002 4 th IWo. Ri. D 14
Performance: Active Probe Linearity Sourcemeter Multimeter 50 OHM GND Pico- resp. AFMProbe SUSS AP 3 Picoprobe 34 A Amsterdam, September 2002 4 th IWo. Ri. D 15
Content IV. Introduction / Motivation Principle Set Up Performance V. Applications VI. Conclusion I. III. Amsterdam, September 2002 4 th IWo. Ri. D 16
Applications: Surface Submicron Probing § Metal layers (live part) § Failure analysis § Design verification § Device characterization § Contact level (dead part) § Transistor characterization § Failure analysis § Design verification Amsterdam, September 2002 4 th IWo. Ri. D 17
Applications: Fib – Hole Probing Probe placement Optical image Bottom of hole scan Surface scan Amsterdam, September 2002 4 th IWo. Ri. D 18
Application: CAD Navigation n n Software supported Area Of Interest (AOI) search Basing on CAD chip layout SUSS PA 200 with Raith CAD Navigation Software Amsterdam, September 2002 4 th IWo. Ri. D 19
Conclusions n n Atomic Force Micro Probing is a useful tool to master the next generation test challenges. Compared to other submicron test technologies AFM Probing offers the following major advantages: – Extremely short time to data – Use under standard environment conditions – Portable – Tester independent – Easy to use – Usual probing interfaces useable (e. g. CAD Navigation) Amsterdam, September 2002 4 th IWo. Ri. D 20
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