Studies of the Yield of BackScattered Electrons in

Studies of the Yield of Back-Scattered Electrons in Scanning Field Emission Microscopy H. Cabrera 1, G. Bertolini 1 and D. Pescia 1 1. Laboratory for Solid State Physics, ETH Zürich, 8003 Zürich, Switzerland Sample Tip d = 20 nm Color scale: Electric field Figure 2. Simulated graphics of the model and experimental setup RESULTS: Counters installed in the detectors with the Particle Counter feature provide the yield of back-scattered electrons depending on the electrostatic variables (Figure 3). Figure 1. Electron trajectories for different tip voltages Figure 3. Electrons in the CLAM 2 and Channeltron CONCLUSIONS: Some electrons escape from the electrostatic junction parallel to the target surface and reach the detectors. This relevant finding is consistent with the observed resolution of the SFEM technology and requires more research to explain the processes involved in the electron scattering and also in the production of secondary electrons. REFERENCES: 1. 2. 3. Young, R. , Ward, J. & Scire, F. The Topografiner: An Instrument for Measuring Surface Microtopography. Review of Scientific Instruments 43, 999 -1011 (1972) Zanin, D. , De Pietro, L. , Peter, Q. , Kostanyan, A. , Cabrera, H. , Vindigni, A. , Bähler, Th. , Pescia, D. & Ramsperger, U. Thirty per cent contrast in secondary-electron imaging by scanning field-emission microscopy. Proc. R. Soc. A 472 (2016) Knápek, A. , Methods of Preparation and Characterization of Experimental Field. Emission Cathodes, Short Thesis Faculty of Electrical Engineering and Communication, Department of Physics, 16 -22 (2013) Excerpt from the Proceedings of the 2019 COMSOL Conference in Cambridge