Status of EUV Resist Screening Roel Gronheid Frieda

Introduction n. This year, so far 10 resists from 6 different vendors have been

Resist A 50 nm 45 nm 40 nm Dose 52. 5 Dose 55. 2

Resist A Dose 60. 8 50/50 nm Dose 60. 8 45/45 nm Dose 60.

Resist A: Exposure Latitudes Half pitch 50 45 40 35 EL (%) 14. 7

Resist B 50 nm 45 nm 40 nm Dose 12. 0 Dose 12. 8

Resist B Dose 11. 3 50/50 nm Dose 11. 3 45/45 nm Dose 11.

Resist C 50 nm 45 nm 40 nm Dose 21. 8 Dose 20. 8

Resist C Dose 20. 8 50/50 nm Dose 20. 8 45/45 nm Dose 20.

Summary n. None of the studied materials resolve patterns below 35 nm half pitch.

© imec 2005 EXCITE/More. Moore - Athens - May 2005 11

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Status of EUV Resist Screening Roel Gronheid; Frieda Van Roey; Mieke Goethals; Harun Solak (PSI) © imec 2005 EXCITE/More. Moore - Athens - May 2005

Introduction n. This year, so far 10 resists from 6 different vendors have been screened n. Focus has been on comparison with previous exposures at LBNL n. Also resolution has been further tested: Can new CARs resolve features smaller than 35 nm HP? Note: Doses as measured at PSI are at mask level. For 35 -50 nm HP they should be divided by 3 for the mask that we used (calibration with LBNL)!!! © imec 2005 EXCITE/More. Moore - Athens - May 2005 2

Resist A 50 nm 45 nm 40 nm Dose 52. 5 Dose 55. 2 +- 52. 7 nm +- 47. 3 nm +- 41. 0 nm 35 nm Dose 63. 9 30 nm Dose 104. 0 (Emax) 25 nm Dose 104. 0 (Emax) +- 32. 7 nm © imec 2005 EXCITE/More. Moore - Athens - May 2005 3

Resist A Dose 60. 8 50/50 nm Dose 60. 8 45/45 nm Dose 60. 8 40/40 nm Dose 60. 8 35/35 nm Esize ~ 20 m. J/cm 2 © imec 2005 EXCITE/More. Moore - Athens - May 2005 4

Resist A: Exposure Latitudes Half pitch 50 45 40 35 EL (%) 14. 7 18. 0 13. 9 17. 1 PSI setup can be used to obtain Exposure Latitudes of Resists. Good agreement with LBNL has been demonstrated (not shown). © imec 2005 EXCITE/More. Moore - Athens - May 2005 5

Resist B 50 nm 45 nm 40 nm Dose 12. 0 Dose 12. 8 Dose 12. 0 +- 52 nm +- 46 nm +- 44 nm 35 nm Dose 12. 0 30 nm Dose 19. 2 25 nm Dose 24. 2 +- 48 nm © imec 2005 EXCITE/More. Moore - Athens - May 2005 6

Resist B Dose 11. 3 50/50 nm Dose 11. 3 45/45 nm Dose 11. 3 40/40 nm Dose 12. 0 35/35 nm Esize ~ 3. 8 m. J/cm 2 Improved sensitivity, but worse resolution © imec 2005 EXCITE/More. Moore - Athens - May 2005 7

Resist C 50 nm 45 nm 40 nm Dose 21. 8 Dose 20. 8 +- 48 nm +- 60 nm +- 54 nm 35 nm Dose 21. 8 © imec 2005 EXCITE/More. Moore - Athens - May 2005 30 nm Dose 32. 3 8

Resist C Dose 20. 8 50/50 nm Dose 20. 8 45/45 nm Dose 20. 8 40/40 nm Esize ~ 6. 9 m. J/cm 2 This resist shows significant top-loss and scumming for small features. Worse resolution than previous examples © imec 2005 EXCITE/More. Moore - Athens - May 2005 9

Summary n. None of the studied materials resolve patterns below 35 nm half pitch. n. Progress on resolution is desperately needed will resists be ready to resolve feature sizes that EUV tools can achieve? Otherwise EUV may only be usable for 32 nm node. n. Dose (shutter) control at PSI has been improved and repeatability has now been demonstrated. This allows determination of exposure latitudes. © imec 2005 EXCITE/More. Moore - Athens - May 2005 10