SPEED AND SELECTIVITY CUSTOM WAVEFORMS MASK Si O

SPEED AND SELECTIVITY: CUSTOM WAVEFORMS MASK Si. O 2 Si · 15 m. Torr, Ar/C 4 F 8 = 75/25, 100 sccm, 10 MHz/10% (Slow, selective) (Fast, non-selective) (Fast, selective) 200 V 1500/200 V · Recipies combining custom waveforms and dynamically adjusted biases optimize speed and selectivity. ICPP 04_21 University of Illinois Optical and Discharge Physics

80 m. Torr SF 6, 200 W Ref: E. Aydil

MODELING ADVANCES ADDRESS TECHNOLOGY DEVELOPMENT !The pressure of (hot) HIDs is many atm. !After turn off, the tube must cool to reduce the metal density (increase E/N) so that the available voltage can re-ignite the lamp. GE R 400 !Lamp designs are often driven by startup considerations. 100/ 0. 001 99. 9/0. 1 97/3 Ambient 50 C 140 C Ar (75 Torr cold fill) / Hg ICPP 04_30 5 x 108 - 5 x 1011 cm-3 0 -450 ns 7/3 220 C !Electron density University of Illinois Optical and Discharge Physics

PLASMA PROPERTIES: PULSED NEGATIVE CORONA Animation Slide · Development of plasma streamer produces large electric field, electron sources, ionization and radical production. · E/N ICPP 04_41 · Net Ionization · N 2/O 2/H 2 O =79. 5 / 1, 1 atm, 15 k. V, 0 -15 ns · [e] MIN · O MAX

SURFACE INTERACTIONS: O RADICALS, IONS 109 - 1012 +15 k. V cycle 5 x 1010 - 5 x 1013 10 mm 1. 5 ns 1. 4 ns 1. 65 ns 10 mm 4 ns 1 x 1011 - 1 x 1014 · [O] cm-3 15 k. V, 1 atm, N 2/O 2/H 2 O=79. 5/1 ICPP 04_43 7 ns · Positive Ions (109 – 5 x 1013 cm-3) · Ion penetration is ultimately controlled by surface charging. · O radicals penetrate deeper into the features. MIN (log scale) MAX University of Illinois Optical and Discharge Physics