SOI SOISTJ 4 STJ for the COBAND collaboration

極低温SOIアンプ SOI-STJ 4による STJ光 パルス応答読出し試験 武内勇司 (筑波大) for the COBAND collaboration Mar. 31, 2017 LAPIS meeting 1

COBAND (COsmic BAckground Neutrino Decay)実験　 2

FD-SOI-MOSFET によるSTJ信号読み出し回路 FD-SOI : Fully Depleted – Silicon On Insulator Channel Width : W p Si. O 2絶縁膜上にMOSFETを形成 p チャネル層が非常に薄い ~50 nm Channel Length : L Id-Vg curve of W/L=10 m/0. 4 m at |Vds|=1. 8 V p-MOS 1 m. A ROOM 3 K n-MOS ROOM 3 K 1 A -Ids 1 A 1 m. A Ids n 1 n. A Vgs (V) -2 -1. 5 -1 Vgs (V) 1 p. A -0. 5 0 0 0. 5 1 極低温(T<3 K)でもp-MOS, n-MOS共にトランジスタとして動作 1. 5 2 8

SOI prototype amplifier (SOI-STJ 4) Vdd 1 Vdd 2 p ソース接地増幅 Ø 電流源としてp-MOS使用 p フィードバック V 2 Ø 自己バイアス電圧印加 p ソースフォロア Ø 出力インピーダンス低減 V 3 OUTPUT INPUT Vb Vss 1 V 5 Vss 2 M 1 M 2 M 3 M 4 M 5 C 1 Type W [μm] L [μm] Nch-source tie 40 1 Pch-source tie 1 10 Nch-body tie 1. 6 10 Nch-source tie 70 1 Nch-source tie 60 1 MIM cap. 100 f. F 11

STJ定電流モード読出しのシミュレーション CSTJ=1 p. F CSTJ=1 n. F CSTJ=0. 5 n. F • Operation voltage: ~1 m. V • Signal: ~100 n. A*2 s • RSTJ~25. 5 k , Rref=1 M STJ応答は，CSTJ RSTJの時定数を持つ 16

Backup 21

22 COBAND Collaboration Members　(As of Mar. 2017) COBAND Shin-Hong Kim, Yuji Takeuchi, Kenichi Takemasa, Kazuki Nagata, Kota Kasahara, Shunsuke Yagi, Rena Wakasa, Yoichi Otsuka (Univ. of Tsukuba), Hirokazu Ikeda, Takehiko Wada, Koichi Nagase (JAXA/ISAS), Shuji Matsuura (Kwansei gakuin Univ), Yasuo Arai, Ikuo Kurachi, Masashi Hazumi (KEK), Takuo Yoshida，Chisa Asano，Takahiro Nakamura, Makoto Sakai (Univ. of Fukui), Satoshi Mima, Kenji Kiuchi (RIKEN), H. Ishino, A. Kibayashi (Okayama Univ. ), Yukihiro Kato (Kindai University), Go Fujii, Shigetomo Shiki, Masahiro Ukibe, Masataka Ohkubo (AIST), Shoji Kawahito (Shizuoka Univ. ), Erik Ramberg, Paul Rubinov, Dmitri Sergatskov (Fermilab)， Soo-Bong Kim (Seoul National University) 22

JAXA Rocket Experiment for Neutrino Decay Search Nb/Al-STJ array Focal length 1 m 24

Surface brightness I [MJy/sr] 100 ZE 10 CMB AKARI COBE 1 0. 1 ZL 0. 01 ISD 0. 001 DGL SL 0. 0001 1 1000 500 C B decay 10 100 wavelength [ m] 200 100 50 E [me. V] 20 10 5 2 Excluded (S. H. Kim 2012) at λ＝ 50μm 25