Single Event Burnout testing of high power Schottky

Single Event Burnout testing of high power Schottky diodes Presented by Pierre GARCIA Enoal LE GOULVEN, Fabien WIDMER, Athina VAROTSOU with the support of Cesar BOATELLA-POLO Contract No 4000118250 ESA/CNES March 2017 TRAD, Tests & Radiations

Introduction This project at a glance : § 40 h of beam § Around 270 Runs § 20 references tested § Around 100 parts irradiated ESA/CNES March 2017 2 TRAD, Tests & Radiations

Introduction § Silicon Schottky diodes have been traditionally considered immune to destructive SEE § Recent works published on literature have shown that silicon power Schottky diodes may be sensitive to destructive events while reverse biased under heavy ion irradiation § This activity consists of performing SEB test under heavy ions on 20 different references of 7 different manufacturers § For this study parts were provided by STMicroelectronics, Thales Alenia Space and Airbus Defence and Space ESA/CNES March 2017 3 TRAD, Tests & Radiations

Previous campaign 2015 QPL product New generation prototype ESA/CNES March 2017 4 TRAD, Tests & Radiations

Results Irradiation performed at Ganil • All QPL parts considered PASS at 75% • These parts are used on space mission at 75% maximum Vr • New prototypes are considerably more sensitive to SEB Fail : IR > IR @ VRRM Number XX% : Value of PASS: IR < IR @ VRRM the % of VRMAX ESA/CNES March 2017 5 TRAD, Tests & Radiations

Previous campaign Results Focus on STM Schottky diode result Two different failure signature were observed on the during the first GANIL campaign. Current step was the most common. Ir degradation with fluence was only observed in some of the new prototypes. ESA/CNES March 2017 6 TRAD, Tests & Radiations

Parts information 1/2 Diode Type Si. C Package VRRM (V) Number of sample STPS 3045 XF 54 S 02 Y Schottky no SMD 05 45 V 10 STPS 80 H 100 Schottky no SMD 1 100 V 10 STPS 30170 XZ 04 P 029 Schottky no SMD 05 170 V 10 STTH 60400 Ultrafast no STTH 61 W 04 CSA 1 (equivalent STTH 60400) Ultrafast no STPSC 1006 Schottky STPS 40 M 60 CR Reference Manufacturer 8 SMD 1 400 V yes TO-220 -2 600 V 13 Schottky no TO-220 -3 60 V 15 STPSC 10 H 065 Schottky yes TO-220 -2 650 V 11 STPS 4045 CW Schottky no TO-247 -3 45 V 11 STPS 5 H 100 BY Schottky no DPACK 100 V 5 ESA/CNES March 2017 STMicroelectronics 7 2 TRAD, Tests & Radiations

Parts information 2/2 Reference Diode Type Si. C Package VRRM (V)* Number of sample 35 CGQ 100 Schottky no TO-254 100 V* 15 45 CKQ 100 Schottky no TO-258 100 V 5 120 LQ 100 Schottky no SMD-1 100 V* 12 HFB 25 HJ 20 Ultrafast no SMD. 5 200 V 5 80 CLQ 150 Schottky no SMD-1 150 V* 11 SML 10 SIC 06 SMD 5 Schottky SMD. 5 600 V 6 MBRB 8 H 100 T 4 G Schottky no D²PACK 100 V 6 BAS 21 LTG 1 Fast Switching no On Semiconductor SOT 23 250 V 5 1 N 6817 Schottky no Microsemi Thin. Key™ 2 100 V* 9 SHDC 124545 P Schottky no Sensitron Semiconductor TO-258 150 V* 12 ESA/CNES March 2017 yes Manufacturer International Rectifier Seme. LAB Limited 8 TRAD, Tests & Radiations

Test procedure and setup Irradiation performed at UCL PASS IR>IRMax FAIL § PIST (Post-Irradiation STress) Test : After the irradiation, a stress is applied to the diode in order to reveal any latent damage on the irradiated devices. ESA/CNES March 2017 9 TRAD, Tests & Radiations

Test procedure and setup STATUS CRITERIA § SEB / Fail: abrupt leak of Ir during irradiation |Ir| > IR (@VRRM) § Failed PIST: abrupt leak of Ir during stress test |Ir| > IR (@VRRM) ESA/CNES March 2017 10 TRAD, Tests & Radiations

SEE tests: Beam description Irradiation facility: U. C. L. IRRADIATION BEAM CHARACTERISTICS Heavy Ions used : Ions used: 124 Xe 35+ (62. 5 Me. V. cm²/mg), 83 Kr 25+ (LET=32. 4 Me. V. cm²/mg), 53 Cr 16+ (LET=16 Me. V. cm²/mg), 27 Al 8+ (LET=5. 7 Me. V. cm²/mg ) Fluence: 1. 107 cm-2 (in two steps 1. 106 and 9. 106 cm-2) for Si Fluence: 3. 105 cm-2 for silicon carbide diode ESA/CNES March 2017 11 TRAD, Tests & Radiations

Results The derated accepted is 75% of @VRMax * Silicone carbide diode Fail : IR > IR @ VRRM Number XX% : Value of PASS: IR < IR @ VRRM the % of VRMAX ESA/CNES March 2017 12 TRAD, Tests & Radiations

Results PART could be FAIL but not necessary not functional * Silicone carbide diode Fail : IR > IR @ VRRM PASS: IR < IR @ VRRM ESA/CNES March 2017 13 TRAD, Tests & Radiations

STMicroelectronics Results * Silicone carbide diode § 2 references Fail after a PIST due to a degradation of the leakage current (for the example IRmax respectively equal to 3. 5µA and 20µA) ESA/CNES March 2017 14 TRAD, Tests & Radiations

STMicroelectronics Results * Silicone carbide diode § 2 references Fail after a PIST due to a degradation of the leakage current (for the example IRmax respectively equal to 3. 5µA and 20µA) Parts still functional but of criteria IRmax = 20µA IRmax = 3. 5µA ESA/CNES March 2017 15 TRAD, Tests & Radiations

Results * Silicone carbide diode ESA/CNES March 2017 16 TRAD, Tests & Radiations

Internal Rectifier Results Focus on IR Schottky diode result ESA/CNES March 2017 17 TRAD, Tests & Radiations

Results Focus on IR Schottky diode result PARTS are still functional ESA/CNES March 2017 18 TRAD, Tests & Radiations

Results * Silicone carbide diode : No information on literature about the sensitivity of Si. C diodes are most sensitive to destructive event ESA/CNES March 2017 19 TRAD, Tests & Radiations

Results Focus on Si. C Schottky diode result Degradation by step was also observed ESA/CNES March 2017 20 TRAD, Tests & Radiations

Results Focus on Si. C Schottky diode result Abrupt degradation of the leakage current has been observed too ESA/CNES March 2017 21 TRAD, Tests & Radiations

Results Focus on Si. C Schottky diode result Increase of leakage current is directly proportional to the fluence and flux These signatures were observed for the 3 references of Si. C diode. ESA/CNES March 2017 22 TRAD, Tests & Radiations

CONCLUSION § 11 of the 20 references tested are degraded due to heavy ions irradiation § Si. C diode technology is more sensitive than Si diode technology § More investigation on Si. C diode have to be performed in order to understand the different phenomenon observed ESA/CNES March 2017 23 TRAD, Tests & Radiations

TRAD Thank you for your attention, any question ? ? ? TRAD Gamma irradiation facility GAMRAY is accredited in compliance with ISO/IEC 17025 standard under n° 1 -6110 for gamma irradiation, dose deposit. ESA/CNES March 2017 TRAD, Tests & Radiations

Results Focus on Si. C Schottky diode result § This increase of leakage current is directly proportional to the fluence and flux § Signatures observed on the 3 Si. C reference ESA/CNES March 2017 25 TRAD, Tests & Radiations