Single Anodic bonding process Na 2 O Pyrex

Single Anodic bonding process Na 2 O Pyrex Si Na 2 O Silicon Si Na+O- Si Si O- Na+ Si O- Na O- Si Si Temperature: 350 °C Voltage: 1000 V - ions start to move to the opposite pole

Single Anodic bonding process Na+ Si Si Si Na+ Si O O O Si Si Si Current: ~15 m. A 10 % initial value O Si Bad bonding defects - Perfect cleaning of the surfaces High voltage High temperature Low surface roughness

Single Anodic bonding process SB 6 bonding machine in CMi cleanroom Sperimental set-up in LMIS 4 lab ½h Time Bond 350°C Gently cooling Vbond Iinit / 10

Test in LMIS 4 lab - Oven Voltage source Amperometer Voltmeter Electrodes

Test in LMIS 4 lab Bonding set-up Text V I MCN 350 -2000 V m. A Aus Ein __. __V + Cathode __. __m. A Pyrex Dirt Pyrex Silicon Anode Nabertherm Program Controller S 27

Double Anodic bonding process Aim= bonding three wafers at the same time… Si Na 2 O Si Silicon Si Pyrex Silicon Si Na 2 O Si Si In literature the double anodic bonding has already been done with thick Pyrex wafers!

Double Anodic bonding process Now what we are doing is…. Si Si O O Na 2 O Si Silicon Pyrex Silicon Si Si O O Si Na 2 O Si Si Si Temperature: 350°C Voltage: 400 V

Double Anodic bonding process We would like to…. Si Si O O O O Na 2 O Si Si Si Pyrex Si Si O O Si Na 2 O Silicon Pyrex Silicon Temperature: 350°C Voltage: 400 V Si Si Silicon Pyrex layer too thin!!!! Si Si Si O O Si Na 2 O Hole in the cover wafer to reach the Pyrex Si Si Si

Anodic bonding program - Build a new bonder machine - New electrode with a hole and a wire inside to reach the Pyrex - Connect the voltmeter and amperometer to the pc through the RS 232 interface - Make tests according to the recepies found in the state of art - Adding pressure?