Silicon Wafer NA TC Chapter Liaison Report Rev

Silicon Wafer NA TC Chapter Liaison Report Rev 1 - May 2, 2016

Meeting Information • Last meeting – Tuesday, April 5, 2016, NA Spring • KLA Tencor, Milpiltas, CA • Next meeting – Tuesday, July 12, 2016, SEMICON West • San Francisco Marriott Marquis, CA • Check www. semi. org/standards for the latest schedule update

NA Silicon Wafer TC Chapter Committee Chairmen Dinesh Gupta /STA Noel Poduje /SMS

Silicon Wafer Committee C: Dinesh Gupta - STA C: Noel Poduje – SMS VC: Mike Goldstein – Consultant TE: Murray Bullis – Materials & Metrology Specifications Int’l Annealed Wafers TF Dinesh Gupta -STA Int’l Polished Wafers TF Mike Goldstein – Consultant John Valley – SSL Int’l Epitaxial Wafers TF Dinesh Gupta - STA Metrology Int’l Advanced Wafer Geometry TF Noel Poduje – SMS Jaydeep Sinha – Consultant Int’l SOI Wafers TF Bich-Yen Nguyen – SOITEC Int’l Automated Advance Surface Inspection TF Kurt Haller - KLA-Tencor Committee Int’l Test Methods TF Dinesh Gupta - STA Int’l Terminology TF TBD

New SNARFs • Int’l Polished Wafer TF – Doc. 5993, Line Item Revision of SEMI M 1 -0416, Specification for Polished Single Crystal Silicon Wafers • Int'l Automated Advance Surface Inspection Task Force – Doc. 5994, Line Item Revision to SEMI M 50, Test Methods for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method (Fix title for conformance) – Doc. 5995, Line Item Revision of SEMI MF 1048 -1111 Test Method For Measuring Reflective Total Integrated Scatter

Ballots approved for next meetings • Cycle 4 -2016 – Doc. 5989, Revision of SEMI M 62 -0515, Specifications for Silicon Epitaxial Wafers – Doc. 5990, Revision of SEMI MF 1811 -0116, Guide for Estimating the Power Spectral Density Function and Related Finish Parameters from Surface Profile Data – Doc. 5994, Line Item Revision to SEMI M 50, Test Methods for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method (Fix title for conformance) • Cycle 5 -2016 – Doc. 5993, Line Item Revision of SEMI M 1 -0416, Specification for Polished Single Crystal Silicon Wafers

Int’l Advanced Wafer Geometry TF • Leaders: – Noel Poduje (SMS) & Jaydeep Sinha (Consultant) • Presentation: – John Valley of Sun. Edison presented “Proposed Approach to Nanotopography for Lithography (Litho. NT). – Invalid Sector discussion from KLA-Tencor. More will be discussed at SEMICON West • Ballot development – Doc. 5915 M 1 ( geometry parameters) revision by Japan – M 21, M 43 and M 78 are due for 5 year review. Members are asked to review before issuing for reapproval ballots.

Int’l Annealed Wafer TF • Leader: – – Dinesh Gupta (STA) No meeting, standby mode

Int’l Epitaxial Wafer TF • Leader: – – Dinesh Gupta (STA) Doc. 5989, Revision of SEMI M 62 -0515, Specifications for Silicon Epitaxial Wafers • Ballot issued in cycle 4 -16 for review at SEMICON West

Int’l Automated Advance Surface Inspection TF • Leader: – Kurt Haller (KLA-Tencor) – Ballots • Doc. 5994, Line Item Revision to SEMI M 50, Test Methods for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method (Fix title for conformance) – Ballot issued in cycle 4 -16 for review at SEMICON West • Revision of SEMI MF 1811 -0116, Guide for Estimating the Power Spectral Density Function and Related Finish Parameters from Surface Profile Data – Ballot issued in cycle 4 -16 for review at SEMICON West • Doc. 5995, Line Item Revision of SEMI MF 1048 -1111 Test Method For Measuring Reflective Total Integrated Scatter – New SNARF for 5 year review

Int’l Polished Wafer TF • Leaders: – John Valley - Sun. Edison Semiconductor – Michael Goldstein - Consultant • Ballot • Doc. 5993, Line Item Revision of SEMI M 1 -0416, (to follow up a comment from Supika on ballot 5893 at SEMICON Japan last year) – • Issued in cycle 5 -16 for review at SEMICON West Doc. 6019, Line Item Revision of SEMI M 1 -0416, (to correct referenced specification, several omissions and errors left in doc. 5893) – Issued in cycle 5 -16 for review at SEMICON West

Int’l SOI Wafer TF • Leader: – Bich-Yen Nguyen (SOITEC) • Discussions: – – No progress made. SOI technology is active. HP, IBM, and other device makers are using SOI. The TF is looking for ways to generate discussions.

Int’l Test Methods TF • Leader: – Dinesh Gupta (STA) • Drafting – Doc. 5703, New Standard: Guide for Carrier Recombination Lifetime Measurements in Electronic Grade Silicon – Maintaining 5 year review SEMI MF documents. These standards are coming up for review. • • SEMI MF 374 -0312 Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single. Configuration Procedure SEMI MF 525 -0312 Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe SEMI MF 1763 -0706 (Reapproved 1111)Test Methods for Measuring Contrast of a Linear Polarizer SEMI MF 728 -1106 (Reapproved 1111) Practice for Preparing an Optical Microscope for Dimensional Measurements SEMI MF 978 -1106 (Reapproved 1111)Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques SEMI MF 1048 -1111 Test Method for Measuring the Reflective Total Integrated Scatter SEMI MF 391 -0310 Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage

Int’l Terminology TF • Leader: – TBD – GCS members plan to have discussion at SEMICON West on what to do. – Continue to maintain M 59?

Question? • For more information, please contact Kevin Nguyen at knguyen@semi. org