Silicon buried channels FBK Past experience Channels made

Silicon buried channels @ FBK Past experience Channels made with individual holes: The section is determined by the DRIE process, the length by the layout Experimental results made in the lab TFD INFN of Pisa show a general compliance of the temperature of the sample to the specific fixed at least up to a power of about 2. 5 W/cm 2. Channels realized as a sum of individual holes: The section is determined by the process and by layout, the length by the geometry Maurizio Boscardin RD 50 Meeting Torino 2016 RD 50 Meeting M. Boscardin et al. NIMA 718 (2013) 297 -298 Maurizio Boscardin

buried channels : wafer layout pressure test structures Buried channel structures based on sigle channel with a 50 um of idraulic diameter flow test structures Structures based on a combination of linear and trasversal approach Maurizio Boscardin RD 50 Meeting Torino 2016 pressure test structures RD 50 Meeting In partnership with CERN Maurizio Boscardin

buried channels: device list Description Cell name # of cells Pressure Samples Longitudinal Single Pressure Samples Longitudinal Ramified 1 P_S_L_C 5_WX_P 25 2 P_S_L_C 5_WX_P 50 3 P_S_L_C 9_WX_P 25 4 P_S_L_C 9_WX_P 50 5 P_R_L_C 11_WX_P 75 2 2 2 Pressure Samples Longitudinal Ramified 6 P_R_L_C 11_WX_P 100 2 Pressure Samples Longitudinal Ramified 7 P_R_L_C 11_WX_P 150 2 Pressure Samples Transversal Single 8 P_S_T 12_C 9_WX_P 25 2 Pressure Samples Transversal Single 9 P_S_T 12_C 9_WX_P 50 2 Pressure Samples Transversal Ramified 10 P_R_T 12_C 11_WX_P 75 2 Pressure Samples Transversal Ramified 11 P_R_T 12_C 11_WX_P 100 2 Pressure Samples Transversal Ramified 12 P_R_T 12_C 11_WX_P 150 2 13 P_S_T 24_C 5_WX_P 50 2 14 P_R_T 24_C 5_WX_P 75 2 Pressure Samples Transversal Ramified 15 P_R_T 24_C 5_WX_P 100 2 Pressure Samples Transversal Ramified Flow Samples Combined TEST CHIP 16 P_R_T 24_C 5_WX_P 150 17 F_C_L_C 8_W 50 18 F_C_T_C 8_W 50 2 3 3 4 Pressure Samples Transversal Single Pressure Samples Transversal Ramified C 5/C 9/C 11 is the number of channels P 25/P 50/P 75/P 100/P 150 is the pitch value expressed in microns Maurizio Boscardin RD 50 Meeting Torino 2016 TOTAL Maurizio Boscardin T 12/T 24 indicates the use of a trench with a size of 4 x 12 or 4 x 24 micron 42 RD 50 Meeting In partnership with CERN

MICROCHANNEL & ANODIC BONDING • Define channel and IO holes in silicon wafers • Anodic bonding with a PIREX wafer SILICON Maurizio Boscardin RD 50 Meeting Torino 2016 PIREX RD 50 Meeting In partnership with LPNHE Maurizio Boscardin

MICROCHANNEL & ANODIC BONDING In partnership with LPNHE Maurizio Boscardin RD 50 Meeting Torino 2016 RD 50 Meeting Maurizio Boscardin