Semiconductor Device Fundamentals Introduction Sung June Kim kimsjsnu
- Slides: 10
Semiconductor Device Fundamentals Introduction Sung June Kim kimsj@snu. ac. kr http: //nanobio. snu. ac. kr 1 Bioelectronic & Systems Lab.
Semiconductor Device Fundamentals Syllabus Bioelectronic & Systems Lab.
Semiconductor Device Fundamentals Syllabus Bioelectronic & Systems Lab.
Semiconductor Device Fundamentals Syllabus Bioelectronic & Systems Lab.
Semiconductor Device Fundamentals Syllabus Bioelectronic & Systems Lab.
Semiconductor Device Fundamentals Semiconductor Device • 1874. Braun – Research of R-V characteristics of Metal – Semiconductor junction – Application : Photo Diode & Rectifier • 1947. Bell Lab. researchers – Ge Bipolar Transistor was invented • 1960. D. Kahng – First Demonstration of Si- MOSFET. Bioelectronic & Systems Lab.
Semiconductor Device Fundamentals Semiconductor Device • 1 st. Transistor 1947. Shockley, Bardeen and Brattain – Two metal whiskers forming E-B, B-C junctions. Bioelectronic & Systems Lab.
Semiconductor Device Fundamentals MOSFET vs. BJT MOSFET • • Unipolar Surface Lateral transport Gate length Low current Slow High density Low power BJT • • Bipolar Buried Vertical transport Base width High current Fast Low density High power Bioelectronic & Systems Lab.
Semiconductor Device Fundamentals MOSFET vs. BJT Semiinsulating Bioelectronic & Systems Lab.
