SelfCooling Device Application of HighThermoelectricPower Materials to SelfCooling

高熱電能材料のSelf-Cooling Deviceへの応用 Application of High-Thermoelectric-Power Materials to Self-Cooling Device 中津川 博 1, 岡本 庸一2, 山口 作太郎3, 河原 敏男 3 1 横浜国立大学, 2 防衛大学校, 3 中部大学 The 20 th Symposium of MRS-J, 20 -22 December 2010 in Yokohama

Introduction heat generation Si wafer (power device) current heat flow n-type plate waste heat spread by heatsink heat release to air by fin or fan Uses heat flow by both thermal conduction and by Peltier heat for its electric current. self-cooling device S. Yamaguchi, ULVAC, 52, 14 (2007)

高熱伝導材料 C Si. C ● Si ● ● Al Al. N Al 2 O 3 低熱伝導材料 （熱電材料） Cu Zn. O ● Ga. N Bi 2 Te 3 ● Na Co. O 0. 5 2 0 10 1 10 2 10 thermal conductivity (W/m. K) 3 10

Experimental Cu plate Electron Probe Micro Analyzer (EPMA) Si 0. 5 mm copper plating n-type Si (111) wafer Cu 1 -2μm electrical resistivity Seebeck coefficient －688μV/K Si Au Si 0. 4μm 18. 8 mΩcm Si Ti 0. 1μm

heat generation waste heatsink power MOSFET (IRF 1324 Pb. F) copperplate copper plating n-type Si (111) wafer S D heatsink waste heat current S Peltier effect + thermal conduciton Schematic structure of self-cooling device

Results & Discussion power MOSFET (IRF 1324 Pb. F) thermocouple Cu S D G Cu Cu Cu current 60 A waste heat generation water cooled heatsink (10± 2℃) power MOSFET (IRF 1324 Pb. F)

self-cooling device 1 power MOSFET Sb doped n-type Si wafer thermocouple Cu current Cu Cu water cooled heatsink (10± 2℃) aluminaplate waste heat 60 A

self-cooling device 2 power MOSFET thermocouple Cu current Cu Cu Cu water cooled heatsink (10± 2℃) aluminaplate waste heat 60 A