SCHOTTKYBARRIER CONTACTS to CARBON NANOTUBE FETs L C

SCHOTTKY-BARRIER CONTACTS to CARBON NANOTUBE FETs L. C. Castro, D. L. John and D. L. Pulfrey Department of Electrical and Computer Engineering University of British Columbia Vancouver, B. C. V 6 T 1 Z 4, Canada pulfrey@ece. ubc. ca IEEE COMMAD 2002, Sydney, Australia

CARBON NANOTUBE FET STRUCTURES gate Planar FET (courtesy R. Martel, IBM) Oxide (15 nm) Coaxial FET (UBC) IEEE COMMAD 2002, Sydney, Australia

CONDUCTION BAND PROFILES VARIOUS VGS, VDS IEEE COMMAD 2002, Sydney, Australia

SOLVING FOR THE POTENTIAL PROFILE E EF 0. 5 f(E) IEEE COMMAD 2002, Sydney, Australia

NON-EQUILIBRIUM ELECTRON DISTRIBUTIONS IEEE COMMAD 2002, Sydney, Australia

SOLVE FOR THE DRAIN CURRENT As the overall system transmission probability, is now known, Landauer’s expression for the current can be employed: IEEE COMMAD 2002, Sydney, Australia

DRAIN CHARACTERISTICS IEEE COMMAD 2002, Sydney, Australia

COMPARISON WITH NON-SB MODEL IEEE COMMAD 2002, Sydney, Australia

CONCLUSIONS • Schottky barriers play a crucial role in determining the drain current. • More detailed characterization of the contact is needed. • Complete solution for the potential profile is needed. IEEE COMMAD 2002, Sydney, Australia

Hole injection at high VDS

Work-function Engineering Effect of workfunction difference for VDS < VGS Legend: MS = 0 e. V MS = -0. 2 e. V L. C. Castro

Source and Drain Contact Work-function Engineering L. C. Castro