Road Map of Technology Semiconductor technology Parameter extraction

Road. Map of Technology Semiconductor technology Parameter extraction Device fab. Semiconductor physics Device modelling

CMOS Technology for 25 nm Channel Length

Contents n p-n junction n Bipolar Junction Transistor n JFET&MESFET (includes M-S junction) n

Ch 1 Semiconductor Introduction n Semiconductor material & Carrier model n Lattice Vibration n

1. 1 半导体材料和载流子模型 Crystalline, Polycrystalline, Amorphous n Solids Metal, Semiconductor, Insulator n Semiconductor generations

1. 1. 1 Crystal Structure介绍 n Unit Cell（元胞） Three Dimensional： Diamond: Ge, Si Zincblende:

Question continue n Si晶格常数a. Si： 5. 431Å n Ge晶格常数a. Ge： 5. 658Å>Si晶格常数 n Si

测量结果 n Strained: Eg(x)=1. 12 -0. 74 x(x为Ge百分含量) n Eg=0. 74 x

1. 1. 3 Carrier Concentration Density-of-State function gc(E) n Distribution function f(E) n Electron

Si、Ge、Ga. As的有效质量、有效状态密度及禁带宽度（300 K) mn*/m 0 mp*/m 0 NC(cm-3) NV(cm-3) Eg(e. V) Si 0.

Carrier Concentration n 将n p, 得 Intrinsic carrier density is · ni~T

Carrier Concentration n —intrinsic Si n=p=ni n —n-Si electrons are “donated” to the conduction

Carrier Concentration n Q 6：已知：Si，ni，ND，全电离，Eg，T 请计算EF与Ei，EC，EV的能量差。

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Road. Map of Technology Semiconductor technology Parameter extraction Device fab. Semiconductor physics Device modelling Integrated circuit Device physics Device simulation Physical model Electrical model

CMOS device

CMOS Technology for 25 nm Channel Length

Quantum computer device

Contents n p-n junction n Bipolar Junction Transistor n JFET&MESFET (includes M-S junction) n Metal-Oxide-Semiconductor Transistor n Other Semiconductor Device

Ch 1 Semiconductor Introduction n Semiconductor material & Carrier model n Lattice Vibration n Carrier Transport Phenomena n Optical Properties of Semiconductor

1. 1 半导体材料和载流子模型 Crystalline, Polycrystalline, Amorphous n Solids Metal, Semiconductor, Insulator n Semiconductor generations Material — three

First generation单晶硅棒

First Generation硅单晶片

Second Generation Ga. As晶圆片

Third Generation：Si. C，Ga. N

1. 1. 1 Crystal Structure介绍 n Unit Cell（元胞） Three Dimensional： Diamond: Ge, Si Zincblende: Ga. As n Lattice Constant：原子平衡间距 n Miller Indices和晶向，晶面：比如（100）晶面，与之垂直的称为[100]晶向

Question Continue

Question continue n Si晶格常数a. Si： 5. 431Å n Ge晶格常数a. Ge： 5. 658Å>Si晶格常数 n Si 1 -x. Gex晶格常数a. Si. Ge计算公式： n a. Si. Ge=a. Si+(a. Ge-a. Si)x=a. Si+0. 0227 x n x称为百分含量

测量结果 n Strained: Eg(x)=1. 12 -0. 74 x(x为Ge百分含量) n Eg=0. 74 x

Derivation of Density-of-State → →

Derivation of Density-of-State ↓

1. 1. 3 Carrier Concentration Density-of-State function gc(E) n Distribution function f(E) n Electron Concentration（单位体积的电子数） : n

Si、Ge、Ga. As的有效质量、有效状态密度及禁带宽度（300 K) mn*/m 0 mp*/m 0 NC(cm-3) NV(cm-3) Eg(e. V) Si 0. 23 0. 12 2. 8 1019 1. 0 1019 1. 12 Ge 0. 03 0. 08 1. 0 1018 6. 0 1018 0. 67 Ga. As 0. 07 0. 09 4. 7 1018 7. 0 1018 1. 43

Carrier Concentration

Carrier Concentration n 将n p, 得 Intrinsic carrier density is · ni~T

Carrier Concentration n —intrinsic Si n=p=ni n —n-Si electrons are “donated” to the conduction band(“donor”) n —p-Si: “hole”s are created in the valence band

Carrier Concentration n Q 6：已知：Si，ni，ND，全电离，Eg，T 请计算EF与Ei，EC，EV的能量差。

Q 6