Reliability of Silicon Germanium Si Ge and SilicononInsulator
Reliability of Silicon Germanium (Si. Ge) and Silicon-on-Insulator (SOI) Semiconductor Devices for Cryogenic Power Electronics (New Task FY 05) Description: SOI devices are reported to exhibit good radiation tolerance, high temperature capability, low power consumption, and high speed switching. New emerging Si. Ge semiconductor technology, which is based on band gap engineering, represents a good candidate for low power and high gain devices that are capable of operation under extremely low temperature conditions. Scarce data is available on the performance of such semiconductor devices at low temperatures. In addition, little is known on the effect of thermal cycling and cold re-start, that is typical of electronic systems that undergo hibernation during coast or while in orbit of some space missions. The focus of this task is to gain insight into the reliability of Si. Ge and SOIbased devices for space exploration missions where cryogenic temperatures are anticipated. The project provides for evaluating and generating risk information on advanced COTS and newly-developed devices for low temperature operation. That information will be used to generate a database on their performance and suitability for space exploration applications. Schedule/Costs: Benefits: • Semiconductor devices, designed via band gap engineering, have potential for meeting requirements for extreme temperature operation. • Functional characteristics and reliability information are critical for the design of electronic systems geared for use in harsh environments of space missions. • Leverage and impact existing NASA programs, such as JWST mission. • Disseminate information to identify limitations of these technologies. FY 05 Total ROM Cost (non-CS) = $ xxx. K Deliverables: • • Generated the test report “Operation of Silicon Germanium Voltage. Controlled Oscillators at Cryogenic temperatures”. Delivered to NEPP in Q 2 FY 05. The following papers were presented at the IMAPS 05 Advanced Technology Workshop on Reliability of Advanced Electronic Packages and Devices in Extreme Cold Environments: - “Silicon Germanium Semiconductors Devices for Cryogenic Power Electronics – III” - “Analog and Digital Electronics for Deep Space Cryogenic Power Systems” Cost (to-date) : $ xxx. K Total Cost : $ xxx. K Lead Center/PI: GRC/Richard Patterson CS FTEs = 0. 2 Status Summary: • 14% reduction in funding impacted the quantity of Civil Service & • Support Service Contractor Work. Si. Ge & SOI devices are extremely hard to acquire due to availability, cost, and lead times. In some cases, only engineering samples exist.
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