Rational Yousinamail com 20020425 Rational You Dr Rational

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Rational. You@sinamail. com; 2002/04/25 Rational You 奈米碳管在奈米電腦的應用 Dr. Rational You IEK/ITRI 2002/04/25 Source: http:

Rational. You@sinamail. com; 2002/04/25 Rational You 奈米碳管在奈米電腦的應用 Dr. Rational You IEK/ITRI 2002/04/25 Source: http: //www. materialsnet. com. tw (2002/02) 1

Rational You Rational. You@sinamail. com; 2002/04/25 SET (單電子電晶體)� 1. 3°K (a) CNT-SET 在 1.

Rational You Rational. You@sinamail. com; 2002/04/25 SET (單電子電晶體)� 1. 3°K (a) CNT-SET 在 1. 3°K 時量測到 庫倫阻斷效應 � (b)元件結構圖 Source: http: //www. materialsnet. com. tw (2002/02) 2

Rational You Rational. You@sinamail. com; 2002/04/25 SET (單電子電晶體)� 260°K (a)以AFM在CNT 做出相距約20 nm 的連續彎曲 的製作過程�

Rational You Rational. You@sinamail. com; 2002/04/25 SET (單電子電晶體)� 260°K (a)以AFM在CNT 做出相距約20 nm 的連續彎曲 的製作過程� (b)在 260°K 時量 到的CB 效應 Source: http: //www. materialsnet. com. tw (2002/02) 3

Rational You Rational. You@sinamail. com; 2002/04/25 CNT FET 元件 (a)上視圖� (b)剖面圖� (c)量測到在不同 VSD 偏壓下ISD

Rational You Rational. You@sinamail. com; 2002/04/25 CNT FET 元件 (a)上視圖� (b)剖面圖� (c)量測到在不同 VSD 偏壓下ISD 對VG 變化 Source: http: //www. materialsnet. com. tw (2002/02) 4

Rational You Rational. You@sinamail. com; 2002/04/25 N 型CNT FET 的I-V特性圖� (a)真空退火� (b)鉀元素摻雜 Source: http:

Rational You Rational. You@sinamail. com; 2002/04/25 N 型CNT FET 的I-V特性圖� (a)真空退火� (b)鉀元素摻雜 Source: http: //www. materialsnet. com. tw (2002/02) 5

Rational You Rational. You@sinamail. com; 2002/04/25 CNT FET 反相器元件 (a)由N 與P 型CNT 所組合成的CNT FET

Rational You Rational. You@sinamail. com; 2002/04/25 CNT FET 反相器元件 (a)由N 與P 型CNT 所組合成的CNT FET 反相器元件 結構圖� (b) Vin-Vout 特性 圖 (元件的電壓 增益大於 1) Source: http: //www. materialsnet. com. tw (2002/02) 6

Rational You Rational. You@sinamail. com; 2002/04/25 具有分離式閘極的CNT FET 元件� (a) 上視圖� (b) 側視示意圖� (c)利用Au

Rational You Rational. You@sinamail. com; 2002/04/25 具有分離式閘極的CNT FET 元件� (a) 上視圖� (b) 側視示意圖� (c)利用Au 作為導線來連接 多個CNT FET 的源極、汲 極、閘極組合成各式的 CNT 邏輯元件 Source: http: //www. materialsnet. com. tw (2002/02) 7

Rational You Rational. You@sinamail. com; 2002/04/25 以 1~3 個CNT FET 組合成的邏輯元件 (a)Inverter (voltage gain=3~5)�

Rational You Rational. You@sinamail. com; 2002/04/25 以 1~3 個CNT FET 組合成的邏輯元件 (a)Inverter (voltage gain=3~5)� (b)NOR gate � (c)SRAM� (d)Ring oscillator (frequency=5 Hz) Source: http: //www. materialsnet. com. tw (2002/02) 8

Rational You Rational. You@sinamail. com; 2002/04/25 Separation Technology for CNT • 在MWNT / SWNT

Rational You Rational. You@sinamail. com; 2002/04/25 Separation Technology for CNT • 在MWNT / SWNT 兩端加上固定電壓 � 使金屬性的一層 (MWNT) /一根 (SWNT)碳管燒毀� 最後只有半導體性 的留下。 • 在MWNT 兩端加固 定電壓後� 當 MWNT 每層外殼燒 毀時電流劇降的特 性圖。 Source: http: //www. materialsnet. com. tw (2002/02) 9

Rational You Rational. You@sinamail. com; 2002/04/25 Electric-Field-Assisted Assembly for CNT Source: http: //www. materialsnet.

Rational You Rational. You@sinamail. com; 2002/04/25 Electric-Field-Assisted Assembly for CNT Source: http: //www. materialsnet. com. tw (2002/02) 10

Rational You Rational. You@sinamail. com; 2002/04/25 Chemically Functionalized Template for CNT Source: http: //www.

Rational You Rational. You@sinamail. com; 2002/04/25 Chemically Functionalized Template for CNT Source: http: //www. materialsnet. com. tw (2002/02) 11

Rational You Rational. You@sinamail. com; 2002/04/25 Fluidic Alignment for CNT Source: http: //www. materialsnet.

Rational You Rational. You@sinamail. com; 2002/04/25 Fluidic Alignment for CNT Source: http: //www. materialsnet. com. tw (2002/02) 12

Rational You Rational. You@sinamail. com; 2002/04/25 Electric-Field Directed Growth for CNT Source: http: //www.

Rational You Rational. You@sinamail. com; 2002/04/25 Electric-Field Directed Growth for CNT Source: http: //www. materialsnet. com. tw (2002/02) 13

Rational You Rational. You@sinamail. com; 2002/04/25 Reference-1 1. S. Iijima, Nature 354, 56 (1991).

Rational You Rational. You@sinamail. com; 2002/04/25 Reference-1 1. S. Iijima, Nature 354, 56 (1991). 2. P. Collins & P. Avouris, Scientific American, 62 (2000). 3. S. Iijima & T. Ichihashi, Nature 363, 605 (1993). 4. D. S. Bethune, et al. , Nature 363 607 (1993). 5. R. E. Smalley, et al. , Nature 391, 59 (1998). 6. C. M. Lieber, Nature 391, 62 (1998). 7. M. S. Dresselhaus, G. Dresselhaus and P. Avouris, Carbon Nanotubes (Springer, 2001). 8. R. E. Smalley, et al. , Science 273, 483 (1996). 9. S. J. Tan, et al, Nature 386, 474(1997). 10. M. Bockrath, et al. , Science 275, 1922 (1997). 11. A. Rochefort, et al. , Phys. Rev. B 60, 13824 (1999). 12. D. Bozovic, et al. , Appl. Phys. Lett. 78, 3693 (2001). 13. C. Dekker, et al, Science 293, 76 (2001). 14. S. J. Tan, et al, Nature 393, 49(1998). Source: http: //www. materialsnet. com. tw (2002/02) 14

Rational You Rational. You@sinamail. com; 2002/04/25 Reference-2 15. R. Martel, et al. , Appl.

Rational You Rational. You@sinamail. com; 2002/04/25 Reference-2 15. R. Martel, et al. , Appl. Phys. Lett. 73, 2447 (1999). 16. V. Derkycke, et al. , Nano Lett. 1, 453 (2001). 17. X. Liy, et al. , Appl. Phys. Lett. 79, 3329 (2001). 18. C. Dekker, et al. , Science 294, 1317 (2001). 19. P. G. Collins, et al. , Science 292, 706 (2001). 20. P. G. Collins, et al, Phys. Rev. Lett. 86, 3128 (2001). 21. M. Radosavlievic, et al. , Phys. Rev. B 64, 241307 (2001). 22. K. Yamamoto, et al. , J. Phys. D 31, L 34 (1998). 23. P. A. Smith, et al. , Appl. Phys. Lett. 77, 1399 (2000). 24. X. Duan, et al. , Nature 409, 66 (2001). 25. R. E. Smalley, et al. , Chem. Phys. Lett. 303, 125 (1998). 26. Y. Huang, et al. , Science 291, 630 (2001). 27. Y. Huang, et al. , Science 294, 1313 (2001) 28. H. Dai, et al. , Appl. Phys. Lett. 79, 3155 (2001). Source: http: //www. materialsnet. com. tw (2002/02) 15