QUESTS SPICE Model YoonJong Lee Sr Manager Device

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QUESTS SPICE Model Yoon-Jong Lee Sr. Manager Device Engineering Team

QUESTS SPICE Model Yoon-Jong Lee Sr. Manager Device Engineering Team

Contents 1. SPICE Model - Quality Assurance - 0. 25 um SPICE Model (aa

Contents 1. SPICE Model - Quality Assurance - 0. 25 um SPICE Model (aa 2533 C 07. A) - 0. 21 um SPICE Model (aa 1833 C 07. 0) 2. Statistical Modeling 3. Interconnect Capacitance 4. Mixed Signal Characterization 5. TCAD Simulation QUESTS

Anam SPICE Model (Modeling from -55 C to 150 C) BSIM 3 v 3.

Anam SPICE Model (Modeling from -55 C to 150 C) BSIM 3 v 3. 1 QUESTS Device sizes for modeling (aa 2533 C 07. A) Short Channel, Narrow Width Effects Non-Uniform Doping Effect Drain Induced Barrier Lowering Mobility Reduction with Gate and Substrate Bias Parasitic Source/Drain Resistance Better Fitting Accuracy at Near. Threshold Region for Analog Simulation

Quality Assurance of SPICE Model QUESTS

Quality Assurance of SPICE Model QUESTS

0. 25 um SPICE Model (aa 2533 C 07. A) QUESTS NMOS Ids-Vds 11.

0. 25 um SPICE Model (aa 2533 C 07. A) QUESTS NMOS Ids-Vds 11. 98/0. 25 VB=0 V T=27 C PMOS Ids-Vds 11. 98/0. 25 VB=0 V T=27 C NMOS Ids-Vgs 11. 98/0. 25 VD=0. 1 V T=27 C PMOS Ids-Vgs 11. 98/0. 25 VD=-0. 1 V T=27 C

0. 21 um SPICE Model (aa 1833 C 07. 0) QUESTS NMOS Ids-Vds 16.

0. 21 um SPICE Model (aa 1833 C 07. 0) QUESTS NMOS Ids-Vds 16. 6/0. 21 VB=0 V T=27 NMOS Ids-Vgs 16. 6/0. 21 VD=0. 1 V T=27 PMOS Ids-Vds 16. 6/0. 21 VB=0 V T=27 PMOS Ids-Vgs 16. 6/0. 21 VB=-0. 1 V T=27

Threshold voltage vs. Gate length NMOS PMOS QUESTS aa 2533 C 07. A w/o

Threshold voltage vs. Gate length NMOS PMOS QUESTS aa 2533 C 07. A w/o Pocket aa 1833 C 07. 0 with Pocket

Temperature Characteristics of IDSAT QUESTS NMOS Vdd=2. 8 V VB=0 V PMOS Vdd=-2. 8

Temperature Characteristics of IDSAT QUESTS NMOS Vdd=2. 8 V VB=0 V PMOS Vdd=-2. 8 V VB=0 V aa 2533 C 07. A NMOS Vdd=2 V VB=0 V PMOS Vdd=-2 V VB=0 V aa 1833 C 07. 0

Gate Delay Time vs. Supply Voltage (aa 2533 C 07. A) QUESTS

Gate Delay Time vs. Supply Voltage (aa 2533 C 07. A) QUESTS

Gate Delay Time vs. Temperature (aa 1833 C 07. 0) NMOS = 0. 5/0.

Gate Delay Time vs. Temperature (aa 1833 C 07. 0) NMOS = 0. 5/0. 21 um PMOS = 0. 8/0. 21 um Fanout = 1 QUESTS

Process Parameter Distribution Mean=44. 6 S. Dev. =0. 36 Mean = 43. 5 S.

Process Parameter Distribution Mean=44. 6 S. Dev. =0. 36 Mean = 43. 5 S. Dev. = 0. 37 Mean = 0. 541 S. Dev. = 0. 022 Mean = -0. 510 S. Dev. = 0. 024 QUESTS

Sigma Contour Plot of 10/0. 21 um Device QUESTS (aa 1833 C 07. 0)

Sigma Contour Plot of 10/0. 21 um Device QUESTS (aa 1833 C 07. 0) 240 FF Idsat. P (u. A/um) 220 2σ SF 200 3σ 180 FS 160 140 420 TT SS 440 460 480 500 Idsat. N (u. A/um) 520 540

Interconnect Capacitance QUESTS

Interconnect Capacitance QUESTS

Ring Oscillator with Capacitance Loading Schematic of Test Pattern Metal 2 Line Wp/Lp=10/0. 24

Ring Oscillator with Capacitance Loading Schematic of Test Pattern Metal 2 Line Wp/Lp=10/0. 24 Wn/Ln=5/0. 24 Metal 1 & 3 Plate Unit : [um] QUESTS

Gate Delay Time vs. Supply Voltage QUESTS (aa 2533 C 07. A)

Gate Delay Time vs. Supply Voltage QUESTS (aa 2533 C 07. A)

Mixed signal resistors ● aa 2533 C 07. A QUESTS

Mixed signal resistors ● aa 2533 C 07. A QUESTS

Mixed signal capacitors ● aa 2533 C 07. A * Target value QUESTS

Mixed signal capacitors ● aa 2533 C 07. A * Target value QUESTS

MOSFET mismatch - aa 2533 C 07. A Mismatch σ= A /√(W×L) ( W

MOSFET mismatch - aa 2533 C 07. A Mismatch σ= A /√(W×L) ( W : Gate width , L : Gate length ) QUESTS

Parasitic pnp bipolar characteristics - aa 2533 C 07. A Emitter size : 1

Parasitic pnp bipolar characteristics - aa 2533 C 07. A Emitter size : 1 × 1 [um] QUESTS

TCAD Simulation SIMS Profile Calibration I Channel & Well Profile (Boron) QUESTS

TCAD Simulation SIMS Profile Calibration I Channel & Well Profile (Boron) QUESTS

TCAD Simulation SIMS Profile Calibration II MDD Profile (Arsenic) QUESTS

TCAD Simulation SIMS Profile Calibration II MDD Profile (Arsenic) QUESTS

TCAD Simulation SIMS Profile Calibration III S/D Profile (Arsenic & Phosphorous) QUESTS

TCAD Simulation SIMS Profile Calibration III S/D Profile (Arsenic & Phosphorous) QUESTS

TCAD Simulation QUESTS Simulated & Measured I-V Characteristics Ids vs. Vgs of 0. 21㎛

TCAD Simulation QUESTS Simulated & Measured I-V Characteristics Ids vs. Vgs of 0. 21㎛ NMOS Ids vs. Vds of 0. 21㎛ NMOS