PXD Summary HansGnther Moser MPI fr Physik Other

PXD Summary Hans-Günther Moser MPI für Physik Other talks in software, SVD and DAQ sessions Super. KEKB 3 nd open meeting, July 7 -9. 2009

SOI Detectors Yasuo Arai Hans-Günther Moser MPI für Physik *1 st MPW: submission on 7 th Aug. 2009 *2 nd MPW: submission on end. Oct. 2010 *3 rd MPW: submission on beg. Jan. 2010 We have received several contacts from foreign labs ; India, UK, Spain, USA, Poland. . . Super. KEKB 3 nd open meeting, July 7 -9. 2009 This possibility has been announced by the facilitation group for monolithic and vertically integrated pixel detectors (Marcel Demarteau, Junji Haba, Hans-Günther Moser and Valerio Re). Thus collaborations for R&D should be initiated pushing progress for such detectors

SOI R&D at KEK Hans-Günther Moser MPI für Physik Laser test of SBPIX 1 48 x 48 pixels of 50 x 50µm² New: buried p-well to reduce back gate effect: B (~1 E 12 cm-2) Without BPW Vback Up Super. KEKB 3 nd open meeting, July 7 -9. 2009 BPW With BPW

DEPFET: Ringberg Workshop Hans-Günther Moser MPI für Physik Super. KEKB 3 nd open meeting, July 7 -9. 2009 http: //indico. mppmu. mpg. de/indico/conference. Display. py? conf. Id=466

DEPFET-Collab. @ Belle-II Original Collaboration: DEPFET pixel detector @ ILC (since 2002) now: Unite efforts to deliver a REAL PXD by 2013 for Belle-II Hans-Günther Moser MPI für Physik Super. KEKB 3 nd open meeting, July 7 -9. 2009 University of Barcelona, Spain University Ramon Llull, Barcelona, Spain Bonn University, Germany Heidelberg University, Germany Giessen University, Germany Göttingen University, Germany Karlsruhe University, Germany IFJ PAN, Krakow, Poland MPI Munich, Germany Charles University, Prague, Czech Republic IGFAE, Santiago de Compostela University, Spain IFIC, CSIC-UVEG, Valencia, Spain with important help from Hawaii, KEK, Vienna DEPFET@Belle-II New management: IB- Board Project Leader C. Kiesling Technical Coord. H. -G. Moser „Integration Coord. “ (Liaison @ KEK)

Funding Hans-Günther Moser MPI für Physik Super. KEKB 3 nd open meeting, July 7 -9. 2009

Schedule Hans-Günther Moser MPI für Physik Super. KEKB 3 nd open meeting, July 7 -9. 2009

Sensor Production Status at 2 nd Belle II meeting (March): SOI wafer bonding at Tracit, France Hans-Günther Moser MPI für Physik Super. KEKB 3 nd open meeting, July 7 -9. 2009 30 SOI wafers received, processing in our own lab has started Presently: cleaning, oxygenation, alignment mask, first implantation: next week. Processed are 6 wafers + dummies

Wafer layout Hans-Günther Moser MPI für Physik Small test matrices with various pixel sizes; 50 µm x 50 µm. . 50 µm x 175 µm Technology variations (gate length L) 4 ½ module large matrices with most likely pixel sizes 5 cm: 50µm x 75µm 5 cm: 50µm x 100µm 3. 5 cm 50µm x 50µm 3. 5 cm 50µm x 75µm Super. KEKB 3 nd open meeting, July 7 -9. 2009 Important for timing!

DEPFET Readout and Control ASICs Hans-Günther Moser MPI für Physik Super. KEKB 3 nd open meeting, July 7 -9. 2009 DCD, Switcher: Heidelberg DHP: Bonn, Barcelona

DCD Tests Hans-Günther Moser MPI für Physik Manuel Koch, Bonn Super. KEKB 3 nd open meeting, July 7 -9. 2009 Works almost at design frequency (540 MHz: 88 ns line rate) (works still at nominal 600 MHz, but with higher noise) Noise level: 90 n. A with 450 p. A/e: 200 e ENC (S/N = 20: 1) ÞSome bugs discovered, improved version will be submitted ÞPush DEPFET gain (600 p. A/e ? )

Summary: ASICs » - DCD prototype chip has been tested with test signals that correspond to DEPFET currents and irradiated up to 7 Mrad. » The chip works fine and has high enough conversion speed. Hans-Günther Moser MPI für Physik » Operation with matrices still to be tested – we do not expect problems. » Only „fine tuning“ of the design for the super KEKB operation is necessary. » - Switcher prototype with LV transistors has been tested and irradiated up to 22 MRad. » The chip works fine and has adequate speed for Belle II operation. » - Another prototype with HV transistors has been designed and tested. » - The irradiation of the chip still has to be done but the basic and most critical part (highvoltage NMOS) has been irradiated up to 600 KRad and no damage has been observed. » - DHP chip will be designed using digital design tools in intrinsically radiation hard 90 nm technology. » - Choice between 4 different bumping technologies – advantages and disadvantages still to be evaluated » Planned submissions: Super. KEKB 3 nd open meeting, July 7 -9. 2009 • Switcher: October 09 • DCD: September 09 • DHP: October 09

Consequences of nano beam Less background? Always welcome, but to be confirmed Smaller beam pipe: 1. 5 cm -> 1. 0 cm Hans-Günther Moser MPI für Physik 1 cm beam pipe allows: 1 st layer closer to the beam => better resolution Smaller modules with smaller pitch (in z) => better resolution Smaller modules: better use of wafer size: higher yield less wafers needed? more space for electronics and cooling More freedom to choose layer spacing optimize resolution improve mechanical layout (symmetric arrangement? ) (more room for cooling/services? ) Super. KEKB 3 nd open meeting, July 7 -9. 2009 Major work needed to find optimum! Need final geometry of IR (and beam pipe outer radius) soon!

Mechanics Frank Simon: Hans-Günther Moser MPI für Physik Super. KEKB 3 nd open meeting, July 7 -9. 2009

Mechanics Hans-Günther Moser MPI für Physik New simpler concept for support More space for services and air flow Integrated cooling channels Sliding module mount (termal expansion) Super. KEKB 3 nd open meeting, July 7 -9. 2009

Cooling Thomas Müller (work done in Karlsruhe and Valencia) Hans-Günther Moser MPI für Physik • DCDs always active: The hottest points • 2 Switchers active • 2 pixel stripes active Power: ca 7 W per module half 6 W: ASIC on end 1 W: sensor area Total ~ 300 W Needs both liquid and air cooling Highly thermally conductive materials needed to get heat out of module Under study: TPG (thermally pyrolythic graphite) CVD diamond Super. KEKB 3 nd open meeting, July 7 -9. 2009 Work started, tooling to be set up (simulation, mock ups)

Simulations Kolja Prothman (work done in Munich and Prague) Important tool for parameter optimisation (pitch, layer radius, pixel arrangments Hans-Günther Moser MPI für Physik Simulated is PXD with active and passive material SVD and CDC Some examples Super. KEKB 3 nd open meeting, July 7 -9. 2009

Simulations Hans-Günther Moser MPI für Physik Variable pitch and bricking not usefull Smaller pitch with longer readout time improves IP(z) resolution considerably Performance better than Belle SVD Most work done assuming 1. 5 cm IR Super. KEKB 3 nd open meeting, July 7 -9. 2009 Work on nano beam geometry started => should be even better

Test Beam Zdenek Dolezal for test beam group Hans-Günther Moser MPI für Physik 6 plane telescope (incl. DUT) IL-like pixels (24 µm pitch) Thick silicon (450 µm) ‘old’ readout & control ASICs ÞLearn a lot about DEPFET operation ÞTuning of operation parameters ÞX-check and tuning of simulation Next test beam end of July Belle II type test beam in 2010 Super. KEKB 3 nd open meeting, July 7 -9. 2009

Technical choices Hans-Günther Moser MPI für Physik Important: need to fix geometry: radius, module length, thickness latest possibility: September 2010 (prepare SOI material) Details on pitch can wait till March 2011 Driven by sensor production schedule Super. KEKB 3 nd open meeting, July 7 -9. 2009 However, engineering of support and cooling including prototyping should start soon: need to fix parameters this year!

Parameter choices Hans-Günther Moser MPI für Physik Options like bricked pixels of variable pitch were abandoned in Ringberg (However: variable pitch may come back due to 1 cm beam pipe? ) Major decision to take: 10µs or 20µs frame readout time? longer readout time allows smaller pixel, better resolution slightly higher (but still tolerable) occupancy higher readout bandwidth needed 20µs favoured in Ringberg have to study again for nano-beam Some ideas to improve DCD readout speed (no DCS): not baseline Super. KEKB 3 nd open meeting, July 7 -9. 2009 Important: Redundancy: Choose parameters (speed, pitch etc) not at the limit of the technology! Give some headroom in case some specs are not reached: e. g. DT(line readout) x N(lines) < 10µs (e. g. use abort gap as ‘buffer’)