PROMIS A Marie SkodowskaCurie Initial Training Network Postgraduate
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PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Shalini Gupta Philipps-Universität Marburg, Faculty of Physics and Materials Science Center, Marburg, Germany shalini. gupta@physik. uni-marburg. de December 07, 2016 PROMIS Mid-term Review Meeting
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Beohari National Entrance Screening Test 2
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics 5 Year Integrated M. Sc. (Physics) awarded by Innovation in Science Pursuit for Inspired Research Funded by : Department of Science and Technology, India 3
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Master thesis : Synthesis and Characterization of Transition Metal Dichalcogenides (TMDCs) Supervisor : Prof. Arnab Bhattacharya, Optoelectronics Lab Gupta, Priti, et al. "Layered transition metal dichalcogenides: promising near-lattice-matched substrates for Ga. N growth. " Scientific reports 6 (2016). 4
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Beohari 5
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Ph. D Project : Quantitative Structural Characterization of Dilute Nitrides using Scanning Transmission Electron Microscopy (STEM) Supervisor : Prof. Kerstin Volz 6
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Materials Applications Samples from In(NAs)/In. As, In(NAs. Sb)/In. As Mid-IR LEDs Lancaster University WP 4 Ga(NAs)/Si, Mid-IR Lasers NAs. P III/V, WP 1 Ga(NAs. Sb)/Si (In. Ga)(NAs)/Ga. As Single Photon Emitters UMR, WP 1 composition all contain dilute amount of N similarity differences device application growth technique Ø develop imaging techniques for low N content Ø understand influence of N on structure Ø correlate findings to device properties 7
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics • Dilute Nitrides: Incorporation of small amount of N (<5 %) in III-V semiconductors like Ga. As, In. As etc. Ø Leads to a significant band gap reduction and offers the possibility of band gap engineering Ø Promising for mid-infrared applications Double- CS-corrected JEOL 2200 FS (S)TEM 8
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics electron source lens focused electron beam sample θ CL ring detector [1] • Nitrogen introduces local distortions in the crystal called ‘static atomic displacement’ (SAD) • SAD influences the intensity in the low angle region [2] [1] Muller, D. A. (2009). Structure and bonding at the atomic scale by scanning transmission electron microscopy. Nature materials, 8(4), 263 -70. [2] Grillo, V. , et al. Journal of Physics: Conference Series. Vol. 326. No. 1. IOP Publishing, 2011. 9
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Reference sample (no N in QW) Sample containing N in QW 0. 1µm p + In. As x 1018 0. 3µm p + In. As x 1017 20 nm In. As 10 nm In. Al. As 10 nm In. NAs 10 nm In. Al. As 20 nm In. As 0. 1µm n + In. As x 1017 0. 3µm n + In. As x 1018 In. As : n-type 10
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Reference sample (no N in QW) In. As 5 nm In. Al. As In. As 5 nm 100 5 nm nm Growth direction In. As 20 nm In. Al. As 5 nm In. As In. Al. As In. As 11 QW
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Reference sample (no N in QW) Results In. As 5 nm In. Al. As In. As 5 nm 100 5 nm nm Growth direction In. As In. Al. As • • • Mean width = 12. 4 nm Standard deviation = 0. 4 nm 5 nm Roughness = 3. 6% In. As • • • Mean width = 12. 9 nm Standard deviation = 0. 5 nm Roughness = 3. 8 % • • QW • Mean width = 13. 6 nm Standard deviation = 0. 5 nm Roughness = 3. 4 % 20 nm In. As In. Al. As intensity • • Determination of the individual layer mean width Roughness = Standard deviation/Mean width 11
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Sample containing N in QW In. As In. Al. As In. NAs Growth direction In. As 5 nm In. Al. As In. NAs In. Al. As QW In. As 200 nm 20 nm In. As 12
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Sample containing N in QW Results Growth direction In. As In. Al. As In. NAs In. Al. As QW In. As 200 nm 20 nm In. As intensity • • Determination of the individual layer mean width Roughness = Standard deviation/Mean width 12 • • • Mean width = 11. 7 nm Standard deviation = 0. 6 nm Roughness = 55. 3% nm Mean width = 10 nm Standard deviation = 2. 7 nm Roughness = 26. 7 % Mean width = 11. 1 nm Standard deviation = 0. 5 nm Roughness = 4. 6 %
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Sample containing N in QW High detector angle Low detector angle In. Al. As In. NAs In. As 100 nm Growth direction In. As In. NAs 100 nm intensity 13
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Summary • Scanning Transmission Electron Microscopy (STEM) is a useful technique to observe materials at atomic level and STEM images can be directly interpreted based on intensity. • I have investigated sample containing small amount (~1%) of nitrogen in QW and compared it with reference sample (identical, except no N in QW). • Reference sample looks good and many structural changes have been observed in the N containing sample. Outputs • ‘STEM analysis of dilute nitrogen containing In. As’, S. Gupta, A. Beyer, M. Kesaria, A. Krier and K. Volz. Ø 9 th Meeting ‘From the witches cauldrons in materials science’, Goslar, April 29 -30, 2016 Ø 19 th International Conference on Molecular-Beam Epitaxy, Montpellier, September 04 -09, 2016 14
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Skills acquired • • Sample preparation for STEM Operate and acquire images at double aberration corrected STEM Quantitative analysis of STEM images using home written Matlab program X-ray diffraction Future work and aspirations • • Interested in continuing research in III-V semiconductors Open for academic / industrial position 15
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics Thank you for your attention! 16
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics 18
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics In. As + N = In. Nx. As 1 -x In. As novel material for mid-IR emitters and detectors
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics In. As Growth direction In. Al. As In. As 20 nm In. As In. Al. As 5 nm
PROMIS A Marie Skłodowska-Curie Initial Training Network Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics
High angle annular dark field (HAADF) CL Detector • Influence of the SAD‘s on HAADF – measurements • Scattering angle (camera length) dependence virtual crystal approximation static atomic displacements 24
Beam path of modern electron microscope 25
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