Precursor 1 Ge Cl 4 Precursor 2 H

前驅物選擇 Precursor 1: Ge. Cl 4 Precursor 2: H 2 4

前驅物選擇原因? Ge. Cl 4 (CH 3)2 Ge. H 2 Ge 2 H 6 H 2 有文獻製程參考 O O X O 可購買 O O(交期長) X O 已有 X X X O 毒性 有毒 劇毒 劇毒 無 前驅物共用性 - - - 佳 選用 V V 文獻: Matsuyama, M. , Sugahara, S. , Ikeda, K. , Uchida, Y. and Matsumura, M. (2000). Hetero Atomic-Layer Epitaxy of Ge on Si(100). Japanese Journal of Applied Physics, 39(Part 1, No. 5 A), pp. 2536 -2540. 5

前驅物選擇 Precursor 1: Ba(Me 5 Cp)2 Precursor 2: TTIP Coreactant: H 2 O 8

前驅物選擇原因? H 2 O Ti(Oi. Pr)4 Ba(Me 5 Cp)2 py-Ba 有文獻製程參考 O O 可購買 O O O X(特別合成) 已有 X X 毒性 無 前驅物共用性 O - - 選用 V V V 碰水氣產生有 呼吸道灼傷、 毒氣體 有毒 有毒 - 文獻: Vehkamäki, M. , Hatanpää, T. , Hänninen, T. , Ritala, M. and Leskelä, M. (1999). Growth of Sr. Ti. O 3 and Ba. Ti. O 3 Thin Films by Atomic Layer Deposition. The Electrochemical Society, Inc. , [online] 2(10), pp. 504 -506. 9

前驅物選擇 Precursor 1: Bi(thd)3 Precursor 2: Fe(thd)3 Coreactant: H 2 O (thd)3: 12

前驅物選擇原因? Iron(III) tertbismuth(III) 2, 3 butoxide dimethyl-2 -butoxide H 2 O Bi(thd)3 Fe(thd)3 有文獻製程參考 O O O 可購買 O 待查 待查 已有 X X X 毒性 無 購買並詢問 前驅物共用性 O - - 均勻性 - 選用 V 較佳 V 一般 V 文獻: 1. Marchand, B. , Jalkanen, P. , Tuboltsev, V. , Vehkamäki, M. , Puttaswamy, M. , Kemell, M. , Mizohata, K. , Hatanpää, T. , Savin, A. , Räisänen, J. , Ritala, M. and Leskelä, M. (2016). Electric and Magnetic Properties of ALD-Grown Bi. Fe. O 3 Films. The Journal of Physical Chemistry C, [online] 120(13), pp. 7313 -7322. 2. Zhang, F. , Sun, G. , Zhao, W. , Wang, L. , Zheng, L. , Liu, S. , Liu, B. , Dong, L. , Liu, X. , Yan, G. , Tian, L. and Zeng, Y. (2013). Atomic Layer Deposition of Bi. Fe. O 3 Thin Films Using β-Diketonates and H 2 O. The Journal of Physical Chemistry C, [online] 13 117(46), pp. 24579 -24585.

前驅物價格整理 Ge BFO BTO 皆含鋼瓶(估 6萬) Ge. Cl 4 Bi(thd)3 Fe(thd)3 Ba(C 5 Me 5)2 單價(單位台幣) 47500/100 g 待報價 2150/2 g 48500/25 g 100 g - - 100 g 25 g 價格(單位台幣) 107500 待報價 167500 48500 交期 詢問中 詢問中 詢問中 購買g數 TTIP 16

參考文獻 1. Puurunen, R. (2005). Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process. Journal of Applied Physics, 97(12), p. 121301. 2. Biyikli, N. and Haider, A. (2017). Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors. Semiconductor Science and Technology, 32(9), p. 093002. 3. Matsuyama, M. , Sugahara, S. , Ikeda, K. , Uchida, Y. and Matsumura, M. (2000). Hetero Atomic-Layer Epitaxy of Ge on Si(100). Japanese Journal of Applied Physics, 39(Part 1, No. 5 A), pp. 2536 -2540. 4. Ikeda, K. , Yanase, J. , Sugahara, S. and Matsumura, M. (2001). Atomic-Layer-Epitaxy of Si. [ebook] Tokyo: Journal of the Korean Physical Society, pp. S 447 -S 458. Available at: http: //www. jkps. or. kr/journal/download_pdf. php? spage=447&volume=39&number=9(1) [Accessed 13 Mar. 2018]. 5. Vehkamäki, M. , Hatanpää, T. , Hänninen, T. , Ritala, M. and Leskelä, M. (1999). Growth of Sr. Ti. O 3 and Ba. Ti. O 3 Thin Films by Atomic Layer Deposition. The Electrochemical Society, Inc. , [online] 2(10), pp. 504 -506. Available at: http: //esl. ecsdl. org/content/2/10/504. full. pdf+html [Accessed 13 Mar. 2018]. 6. Ba. Ti. O 3 Thin Films from Atomic Layer Deposition: A Superlattice Approach. (2017). J. Phys. Chem. C, [online] 121, pp. 1691116920. Available at: https: //pubs. acs. org/doi/pdf/10. 1021/acs. jpcc. 7 b 05633 [Accessed 13 Mar. 2018 ]. 21

參考文獻 7. Lin, E. , Posadas, A. , Wu, H. , Smith, D. and Demkov, A. (2017). Epitaxial growth of barium titanate thin films on germanium via atomic layer deposition. Journal of Crystal Growth, [online] 476, pp. 6 -11. Available at: https: //www. sciencedirect. com/science/article/pii/S 0022024817304876 [Accessed 13 Mar. 2018 ]. 8. Bhuiyan, A. , Hashimoto, A. and Yamamoto, A. (2003). Indium nitride (In. N): A review on growth, characterization, and properties. Journal of Applied Physics, 94(5), pp. 2779 -2808. 9. Marchand, B. , Jalkanen, P. , Tuboltsev, V. , Vehkamäki, M. , Puttaswamy, M. , Kemell, M. , Mizohata, K. , Hatanpää, T. , Savin, A. , Räisänen, J. , Ritala, M. and Leskelä, M. (2016). Electric and Magnetic Properties of ALD-Grown Bi. Fe. O 3 Films. The Journal of Physical Chemistry C, [online] 120(13), pp. 7313 -7322. 10. Zhang, F. , Sun, G. , Zhao, W. , Wang, L. , Zheng, L. , Liu, S. , Liu, B. , Dong, L. , Liu, X. , Yan, G. , Tian, L. and Zeng, Y. (2013). Atomic Layer Deposition of Bi. Fe. O 3 Thin Films Using β-Diketonates and H 2 O. The Journal of Physical Chemistry C, [online] 117(46), pp. 24579 -24585. 22

參考文獻 11. Bhuiyan, A. , Hashimoto, A. and Yamamoto, A. (2003). Indium nitride (In. N): A review on growth, characterization, and properties. Journal of Applied Physics, 94(5), pp. 2779 -2808. 12. Karl, R. (2018). A computational study on indium nitride ALD precursors and surface chemical mechanism. [online] Available at: http: //liu. diva-portal. org/smash/record. jsf? pid=diva 2%3 A 1177404&dswid=-7550 [Accessed 4 Apr. 2018]. 13. Ozgit-Akgun, C. , Goldenberg, E. , Bolat, S. , Tekcan, B. , Kayaci, F. , Uyar, T. , Okyay, A. and Biyikli, N. (2015). Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures. physica status solidi (c), 12(4 -5), pp. 394 -398. 23