PORTCARDs DOIMs Sasha Pronko Fermilab 051106 Sasha Pronko

PORTCARDs & DOIMs Sasha Pronko Fermilab 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 1

Port. Card & DOIM: what & where? 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 2

Port. Cart requirements o o o o Low mass & size High radiation dose Reliability High heat transfer capability Remote control and data transmission Low noise regulated voltage Detector grounding strategy 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 3

Port. Card functions o Powers, initializes, controls and read out chips – Connects to SVX 3 chips by High Density Interconnects (HDI) – Power for analog section of chips – Calibration voltages for z & sides – Interface with FIB – Forwards L 1 A accept to chips – Buffers FECLK & BECLK – Forwards data to FIB 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 4

Data & OBVD to FIB Power/commands from JC/FIB HDI’s to ladders Port. Card basics o PC—beryllia based multi-chip module o One PC per wedge: – SVX: 72 PC’s; ISL: 30 PC’s; L 00: 12 PC’s 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 5

Port. Card components o Per PC – 1 Transceiver o Per Ladder – 1 analog DDR; – 1 digital DDR; – 2 ELCO’s; – 2 JFET’s; – NPN – DOIM DDR — Digital to Analog Converter/Decoder/ Regulator chip 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 6

Port. Card: Digital section o 11 Commands & CLKs – – 53 MHz clock Beam X-ing clock L 1 A signal etc. (SVX 3 D by Ankush) o DVDD power supplies o Data transmission – DOIM o Components – Transceiver • Receives FIB commands & CLKs, transforms them into single-ended signals – digital DDR • Decoder • Buffers CLKs 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 7

Port. Card: Analog section o Voltages – AVDD to FE – Bias to sensors o Components – Analog DDR • FE voltage regulation • DAC-calibration voltage – JFET & NPN transistors 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 8

Port. Card location L 00 & ISL PC’s are in the same place 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 9

Port. Card location, continued o PC need to be cooled 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 10

Port. Card: Performance stability & Radiation hardness o Performance – Noise SSD DAQ Noise SSD PC DAQ o Radiation hardness – Rick Tesarek says (Run 2 measurement) that ionizing doze for SVX PC is 20 krad/fb-1 (~10% error) – ~80 -160 krad in Run 2 (4 -8 fb-1) – PC designed hardness is ~200 krad – L 00 bias issues • Degradation of dielectric possible problems with HV bias (specification is ~200 V, L 00 may need to be biased up to much higher voltages) 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 11

Port. Card: Radiation Hardness Tests o Radiation hardness tests with 63 Me. V protons (UC Davis) and 8 Ge. V protons (Fermilab) – 2 PC’s irradiated: 200 krad & 400 krad – 400 krad PC was used for long term reliability testing with resistive loads • • No No failure after 3 months change in TX & DDR current draws change in DDR DAC calibration voltage slope change shift in pedestals; no change in noise – JFET & NPN irradiated by ~500 krad • No problems with analog voltage regulation observed o PC’s should withstand the radiation dose expected for Run 2 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 12

DOIM basics o DOIM — Dense Optical Interface Module – Converts electrical signal from SVX chip into optical signal (interface between chip & FIB) – 53 Mbyte/sec/DOIM data transfer rate; – 8 bits & OBVD; bit error rate <10 -12 at 63 MHz – 3 major components: transmitter (TX), 22 m fiber, receiver (RX) – 1 DOIM per ladder – Radiation tolerance up to 200 krad 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 13

DOIM: component location o TX on PC (5 TXs per PC in SVX) o 10 RX (2 wedges) on Fiber Transition Module (FTM) 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 14

DOIM: TX o TX — In. Ga. As. P edge emitting laser diode array – 12 channel (9 used); 250 m pitch matches fiber – Power supply: VCC-VLD • VCC=5 V & VLD adjustable – current: 20 m. A/ch at 3 V; slope ~2 m. A/0. 1 V – Differential amplifier is sensitive up to 10 m. V – Light output: 1 m. W/ch @20 m. A – Light cone: uniformity in far field angle affects light coupling (~400 W span) 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 15

DOIM: RX o RX — In. Ga. As/In. P PIN-diode array – 12 channels (9 used) – Power supply: VCC=5 V – Optical input converted to current pulse to receiver chip 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 16

DOIM: TX & RX characteristics Digital 1 = Digital 0 = We have bit stuck low or bit stuck high errors if these characteristics are out of range 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 17

DOIM: OBVD & 8 bits o OBVD & 8 bits — SVX chip (Ankush’s talk) o Example of TX output 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 18

DOIM: Temperature sensitivity o TX is sensitive to temperature (not an issue for RX) o RX designed to operate at 40 -60% duty cycle 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 19

DOIM: Radiation Hardness of RX o o Beam tests with protons: 200 krad & 400 krad Linear dependence to dose Ratio of light drop independent on light power Degradation is <10% per 200 krad 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 20

Summary o PC’s & DOIM’s provide an interface between sensors/chips and PS, DAQ o PC’s performance is stable respect to radiation dose expected for Run 2 o DOIM – TX sensitive to temperature – 10% degradation per 200 krad — it should be enough for Run 2 – RX sensitive to duty cycle o Sources of info: – cdf 5535, cdf 3865, cdf 6497, cdf 7281, ESESVX 980318, old talks, TDR 05/11/06 Sasha Pronko, Silicon Workshop II, UCSB 21