Optical Properties of Porous Silicon ThueMorse Multilayers I

Aperiodic vs Periodic Photonic Bandgap Crystals Photonic Quasi-Crystals ØGeometrical periodicity ØHigh geometric complexity ØSingle

The Thue-Morse sequences nth lattice (n+1)st lattice A AB B BA Nlayers=2 n d.

Calibration curves B A Bruggemann Model Etching solution: HF/Et. OH=30/70 Silicon wafer: p+ type,

Normal incidence reflectivity Optical Spectrum Analyser (OSA) Riunione Annuale GE 2006 Ischia, 21 -23

Variable angle reflectivity S 76 Partial FBG Width = 90 70 nm -30°<q<30° Riunione

Thue-Morse sensing Number of layers High porosity layer Low porosity layer Peak wavelength Device

Thank you for your attention Riunione Annuale GE 2006 Ischia, 21 -23 giugno 2006

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Optical Properties of Porous Silicon Thue-Morse Multilayers I. Rea, L. Rotiroti, I. Rendina, L. De Stefano Institute for Microelectronic and Microsystem – Dept. of Naples, National Council of Research, Naples, Italy L. Moretti DIMET – University “Mediterranea” of Reggio Calabria, Italy Riunione Annuale GE 2006 Ischia, 21 -23 giugno 2006

Aperiodic vs Periodic Photonic Bandgap Crystals Photonic Quasi-Crystals ØGeometrical periodicity ØHigh geometric complexity ØSingle photonic band gap ØMultiple photonic band gaps ØBloch-like states ØHighly localized states 1) 2) X. Jiang, Y. Zhang, S. Feng, K. C. Huang, Y. Yi, and J. D. Joannopoulos, “Photonic band gaps and localization in the Thue–Morse structures”, Applied Physics Letters 86, 201110 (2005). F. Qui, R. W. Peng, X. Q. Huang, X. F. Hu, Mu Wang, A. Hu, S. S. Jiang and D. Feng, “Omnidirectional reflection of electromagnetic waves on Thue-Morse dielectric multilayers”, Europhysics Letters 68, 658 -663 (2004). Riunione Annuale GE 2006 Ischia, 21 -23 giugno 2006

The Thue-Morse sequences nth lattice (n+1)st lattice A AB B BA Nlayers=2 n d. Sn=2 d. Sn-1 S 0=[A], S 1=[AB], S 2=[ABBA], S 3=[ABBABAAB], S 4=[ABBABAABABBA], … Riunione Annuale GE 2006 Ischia, 21 -23 giugno 2006

Calibration curves B A Bruggemann Model Etching solution: HF/Et. OH=30/70 Silicon wafer: p+ type, <100> orientation, 8 -12 m. W cm resistivity Riunione Annuale GE 2006 n. A=1. 3, d. A= 0. 135 mm n. B=1. 96, d. B= 0. 90 mm Ischia, 21 -23 giugno 2006

Normal incidence reflectivity Optical Spectrum Analyser (OSA) Riunione Annuale GE 2006 Ischia, 21 -23 giugno 2006

Variable angle reflectivity S 76 Partial FBG Width = 90 70 nm -30°<q<30° Riunione Annuale GE 2006 Ischia, 21 -23 giugno 2006

Thue-Morse sensing Number of layers High porosity layer Low porosity layer Peak wavelength Device thickness 64 81 % 56 % 1030 nm 7. 2 mm Riunione Annuale GE 2006 Ischia, 21 -23 giugno 2006

Thank you for your attention Riunione Annuale GE 2006 Ischia, 21 -23 giugno 2006