Oct 22 2012 RMD APDs 2 x 2

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Oct. 22, 2012 RMD APDs 2 x 2 mm 2 Other information 8 x

Oct. 22, 2012 RMD APDs 2 x 2 mm 2 Other information 8 x 8 mm 2 indium dc capacitance 8 x 8 mm 2 Al-coated

Oct. 22, 2012 RMD APDs Other information APD signal pulse shape dependence on incidence

Oct. 22, 2012 RMD APDs Other information APD signal pulse shape dependence on incidence angle NONE 8 x 8 mm 2 APD

Oct. 22, 2012 RMD APDs Other information Temporal response of APDs 980 nm Vcsel,

Oct. 22, 2012 RMD APDs Other information Temporal response of APDs 980 nm Vcsel, ~1 ns pulse, 1 k. Hz 1. 3 x 104 photons/pulse, spot size <100 µm APD bias at -1. 75 k. V response of APDs to Am 241 - α-particle APD bias at -1. 75 k. V Their tfall time is significantly different than trise Indium and Al-coated APDs have broader pulse widths

Oct. 22, 2012 RMD APDs Other information Noise of APD, 8 x 8 mm

Oct. 22, 2012 RMD APDs Other information Noise of APD, 8 x 8 mm 2 device Output of APD is sent to BNL-IO-535 charge sensitive preamplifier followed by Ortec-474 timing filter amplifier with 0. 5 µs shaping time. By knowing the electron charge calibration of the preamp+shaping amplifier, 104 electrons = 85 m. V signal pulse amplitude, the APD noise is measured by the quadrature subtraction on the rms voltages at the output of the shaping amplifier with and without – 1. 75 k. V bias on the APD (w/o photons), they are 7. 8 and 7. 2 m. V, respectively. APD noise is ~350 rms electrons at -1. 75 k. V bias Representative shaping amplifier output signal with 1. 3 x 104 photons/pulse on APD, 980 nm Vcsel, ~1 ns pulse, 1 k. Hz, spot size <100 µm, APD bias at -1. 75 k. V rms voltage noise