News on production at IZM Twente Yevgen Bilevych

News on production at IZM / Twente Yevgen Bilevych CERN 22. 02. 2012

Main technological steps for the formation of structure Time. Pix chip or dummy substrate / spacer / Al grid 1. Formation of protection layer 2. Deposition of spacer material 3. Deposition of Al thin film 4. Formation of “support” / grid

Gem. Grid IZM, Berlin and University of Bonn 200 mm silicon dummy wafer Main technological steps for the formation of Gem. Grid structure 1. Aluminum deposition (bottom electrode) 2. Deposition of BCB Chip 3. Formation of Al grid 4. Dry etching of BCB

Gem. Grid NIKHEF and University of Twente Time. Pix single chip Main technological steps for the formation of structure Time. Pix chip / Si. O 2 or SU-8 / Al grid 1. Formation of Six. Ny layer 2. Deposition of Si. O 2 or SU-8 Chip 3. Formation of Al grid 4. Dry wet etching of Si. O 2 or wet etching of SU-8

Si. O 2 SU-8

In. Grid University of Bonn, IZM Berlin, NIKHEF and University of Twente 200 mm Time. Pix wafer Main technological steps for the formation of structure Time. Pix wafer / SU-8 pillar / Al grid 1. Formation of Six. Ny protection layer 2. Deposition of SU-8 3. Pillars-like structure formation Chip 4. Formation of Al grid 5. Development of SU-8

before now Main problems: - formation of protection layer - deposition of Al - final development of SU-8

Polyimide mask Microsystems HD 4100 polyimide - negative tone, solvent developed, photodefinable polyimide Steps: • Spinning • Baking • Exposition • Development • Silicon nitride deposition • Chemical activation of polyimide • Stripping Advantage: • Silicon technology compatible • Perfect alignment • No residuals Disadvantage: • Temperature sensitive process • Time consuming process • mechanical scratching of bonding pads

deposition of Al layer Sputtering system Leybold Z 660 DC 50%, no sputter etching, 30 sec – the deposition time for every sputtering run, + cooling delay Total thickness: ~ 800 nm 1 x 2 x 3 x 4 x 5 x 6 x 7 x 8 x 9 x 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 x x x x

Development of SU-8 1. 2. 3. 4. 5. 6. 7. 8. 9. Acetone: IPA: H 2 O (1: 1: 2) Acetone: IPA: H 2 O (1: 1: 1) Acetone: IPA (1: 1) Microstrip 6001 H 2 O IPA Acetone Drying in the air

Conclusion 1. 200 mm Time. Pix wafer / Six. Ny / SU-8 pillars / Al grid - yield of high quality In. Grids about 70% 2. Single Time. Pix chip / Six. Ny / Si. O 2 (hole) / Al grid 3. Single Time. Pix chip / Six. Ny / SU-8 (hole) / Al grid 4. 200 mm silicon wafer / BCB (hole) / Al grid